2SK3085
2002-08-09
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
F-MOSV)
2SK3085
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
Low drain-source ON resistance: R
DS (ON)
= 1.7 (typ.)
High forward transfer admittance: |Y
fs
| = 3 S (typ.)
Low leakage current: I
DSS
= 100 A (max) (V
DS
= 600 V)
Enhancement-mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
600 V
Drain-gate voltage (R
GS
= 20 kW) V
DGR
600 V
Gate-source voltage
V
GSS
30 V
DC (Note
1) I
D
3.5
Drain current
Pulse (Note
1)
I
DP
14
A
Drain power dissipation (Tc
= 25C)
P
D
75 W
Single pulse avalanche energy
(Note
2)
E
AS
227 mJ
Avalanche current
I
AR
3.5 A
Repetitive avalanche energy (Note 3)
E
AR
7.5
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150 C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
1.67
C/W
Thermal resistance, channel to ambient
R
th (ch-a)
83.3
C/W
Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2: V
DD
= 90 V, T
ch
= 25C, L = 28.8 mH, R
G
= 25 W, I
AR
= 3.5 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC TO-220AB
JEITA SC-46
TOSHIBA 2-10P1B
Weight: 2.0 g (typ.)
2SK3085
2002-08-09
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 25 V, V
DS
= 0 V
10
mA
Gate -source breakdown voltage
V
(BR) GSS
I
G
= 10 mA, V
DS
= 0 V
30
V
Drain cut-off current
I
DSS
V
DS
= 600 V, V
GS
= 0 V
100
mA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
600
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
2.0
4.0 V
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 1.8 A
1.7 2.2 W
Forward transfer admittance
Y
fs
V
DS
= 10 V, I
D
= 1.8 A
2.0
3.0
S
Input capacitance
C
iss
800
Reverse transfer capacitance
C
rss
6
Output capacitance
C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
65
pF
Rise time
t
r
15
Turn-on time
t
on
50
Fall time
t
f
15
Switching time
Turn-off time
t
off
85
ns
Total gate charge
Q
g
20
Gate-source charge
Q
gs
10
Gate-drain charge
Q
gd
V
DD
~
- 400 V, V
GS
= 10 V, I
D
= 3.5 A
10
nC
Source-Drain Ratings and Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
3.5 A
Pulse drain reverse current
(Note 1)
I
DRP
14 A
Forward voltage (diode)
V
DSF
I
DR
= 3.5 A, V
GS
= 0 V
-1.7
V
Reverse recovery time
t
rr
400 ns
Reverse recovery charge
Q
rr
I
DR
= 3.5 A, V
GS
= 0 V,
dI
DR
/dt
= 100 A/ms
2.6
mC
Marking
Type
K3085
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty <= 1%, t
w
= 10 ms
0 V
10
V
V
GS
R
L
= 111 W
V
DD
~
- 220 V
I
D
= 1.8 A
V
OUT
50
9
2SK3085
2002-08-09
3
1
0
5
0
2.0
2
0.4
1.2
3
0.8
1.6
4
Common source
Tc = 25 C
Pulse test
15
10
8
7
6
5.5
5
4.8
4.6
4.4
4.2
VGS = 4 V
2
0
10
0
4
4
1
3
6
2
8
25
Common source
VDS = 20 V
Pulse test
Tc
= -55 C
100
Fo
rw
ar
d t
r
a
n
sfe
r
ad
mi
ttanc
e
Y
fs
(
S
)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
Y
fs
I
D
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
R
DS (ON)
I
D
Drain current I
D
(A)
Drain current I
D
(A)
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(
W
)
I
D
V
DS
V
DS
V
GS
10
0.5
3
1
5
0.3
0.3
0.1
0.5
1
3
5
10
Tc
= -55 C
Common source
VDS = 20 V
Pulse test
25
100
10
0.5
3
1
5
0.3
0.3
0.1
0.5
1
3
5
10
VGS = 10, 15 V
Common source
Tc = 25 C
Pulse test
4
0
20
0
5
8
1
3
12
2
4
16
Common source
Tc = 25 C
Pulse test
15
10
6
7
8
5.5
VGS = 4 V
5
4.5
20
4
12
8
16
0
Common source
Tc = 25 C
Pulse test
ID = 3.5 A
1
1.8
4
0
24
8
12
20
16
2SK3085
2002-08-09
4
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
(W
)
Gate
th
res
hol
d vol
t
a
ge
V
th
(V
)
Case temperature Tc (C)
R
DS (ON)
Tc
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(
W
)
Drain-source voltage V
DS
(V)
I
DR
V
DS
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I
DR
(A
)
Drain-source voltage V
DS
(V)
Capacitance V
DS
C
apaci
t
anc
e C
(p
F)
Case temperature Tc (C)
V
th
Tc
Case temperature Tc (C)
P
D
Tc
3000
10
300
50
1000
3
1
5
10
100
3
30
500
100
30
50
Ciss
Common source
VGS = 0 V
f = 1 MHz
Tc = 25 C
Coss
Crss
5
1
3
2
4
0
-80
0
40
80
120
160
-40
Common source
VDS = 10 V
ID = 1 mA
Pulse test
10
2
6
4
8
0
-80
0
40
80
120
160
-40
ID = 2.5 A
Common source
VGS = 10 V
Pulse test
1
100
20
60
40
80
0
0
80
120
200
40
160
30
0.3
1
10
0
1
-0.2
5
3
0.5
-0.4
-0.6
-0.8
-1.0
-1.2
10
Common source
Tc = 25 C
Pulse test
3
VGS = 0, -1 V
2SK3085
2002-08-09
5
0.01
1
0.1
0.03
0.05
1
0.3
0.5
10
3
5
100
30
50
10
3 100
30 1000
300
DC operation
Tc = 25C
100
ms *
1 ms *
* Single nonrepetitive pulse
Tc
= 25C
Curves must be derated linearly
with increase in temperature.
ID max (pulse) *
ID max
(continuous)
VDSS max
10
m 100
m
1 m
10 m
100 m
1
10
0.003
0.005
0.01
0.03
0.05
0.1
0.3
0.5
1
3
Single pulse
0.2
0.01
T
PDM
t
Duty
= t/T
Rth (ch-c) = 1.67C/W
Duty
= 0.5
0.1
0.05
0.02
r
th
- t
w
Safe operating area
E
AS
T
ch
Drain-source voltage V
DS
(V)
Pulse width t
w
(S)
Channel temperature Tch (C)
N
o
r
m
al
i
z
ed t
r
a
n
si
e
n
t t
h
e
r
m
a
l
i
m
pe
da
nc
e
r
th
(
t
)
/R
th
(c
h
-
c
)
A
v
a
l
anc
he energ
y
E
AS
(m
J
)
Drai
n
c
u
rrent
I
D
(A
)
0
25
50
100
150
250
200
50
75
100 125 150
-15 V
15
V
Test circuit
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
= 25 W
V
DD
= 90 V, L = 28.8 mH
-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
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