2SK3236
2002-08-12
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3236
Switching Regulator Applications, DC-DC Converter and
Motor Drive Applications
4 V gate drive
Low drain-source ON resistance: R
DS (ON)
= 13.5 m (typ.)
High forward transfer admittance: |Y
fs
| = 42 S (typ.)
Low leakage current: I
DSS
= 100 A (max) (V
DS
= 60 V)
Enhancement-model: V
th
= 1.3~2.5 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
60 V
Drain-gate voltage (R
GS
= 20 kW) V
DGR
60 V
Gate-source voltage
V
GSS
20 V
DC (Note
1) I
D
35
Drain current
Pulse (Note
1)
I
DP
105
A
Drain power dissipation (Tc
= 25C)
P
D
30
W
Single pulse avalanche energy
(Note
2)
E
AS
68
mJ
Avalanche current
I
AR
35
A
Repetitive avalanche energy (Note 3)
E
AR
3.0
mJ
Channel temperature
T
ch
150 C
Storage temperature range
T
stg
-55~150 C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
4.16
C/W
Thermal resistance, channel to ambient
R
th (ch-a)
62.5
C/W
Note 1: Please use devises on condition that the channel temperature is below 150C.
Note 2: V
DD
= 50 V, T
ch
= 25C, L = 40 mH, R
G
= 25 W, I
AR
= 35 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution
Unit: mm
JEDEC
JEITA SC-67
TOSHIBA 2-10R1B
Weight: 1.9 g (typ.)
2SK3236
2002-08-12
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
10
mA
Drain cut-OFF current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
100
mA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
60
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
1.3
2.5 V
V
GS
= 4 V, I
D
= 18 A
22 36
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 18 A
13.5 20
m
W
Forward transfer admittance
Y
fs
V
DS
= 10 V, I
D
= 18 A
21
42
S
Input capacitance
C
iss
2300
Reverse transfer capacitance
C
rss
220
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
370
pF
Rise time
t
r
9
Turn-ON time
t
on
23
Fall time
t
f
20
Switching time
Turn-OFF time
t
off
100
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
52
Gate-source charge
Q
gs
37
Gate-drain ("miller") charge
Q
gd
V
DD
~
- 48 V, V
GS
= 10 V, I
D
= 35 A
15
nC
Source-Drain Ratings and Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
35 A
Pulse drain reverse current
(Note 1)
I
DRP
105
A
Forward voltage (diode)
V
DSF
I
DR
= 35 A, V
GS
= 0 V
-1.7
V
Reverse recovery time
t
rr
60 ns
Reverse recovery charge
Q
rr
I
DR
= 35 A, V
GS
= 0 V,
dI
DR
/dt
= 50 A/ms
81 nC
Marking
Type
K3236
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty <= 1%, t
w
= 10 ms
0 V
10
V
V
GS
R
L
= 1.67 W
V
DD
~
- 30 V
I
D
= 18 A
V
OUT
4.
7
9
2SK3236
2002-08-12
3
I
D
- V
DS
I
D
- V
DS
I
D
- V
GS
V
DS
- V
GS
Y
fs
- I
D
Drain-source voltage V
DS
(V)
Drain-source voltage V
DS
(V)
Gate-source voltage V
GS
(V)
Gate-source voltage V
GS
(V)
Drain current I
D
(A)
Drain current I
D
(A)
D
r
ai
n
cu
rre
nt
I
D
(A
)
D
r
ai
n
cu
rre
nt
I
D
(A
)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
D
r
ai
n
cu
rre
nt
I
D
(A
)
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(
W
)
Fo
rw
ar
d t
r
a
n
sfe
r
ad
mi
ttanc
e
Y
fs
(
S
)
R
DS (ON)
- I
D
3.5
0
0
4
12
20
0.2 0.4
1
VGS = 3 V
3.25
3.75
4
8
10
5
0.6 0.8
8
16
Common source, Tc
= 25C
Pulse test
5
0
0
VGS = 3 V
Common source
Tc
= 25C
Pulse test
4.5
6
8
10
20
60
100
2
4
10
6 8
40
80
4
3.5
0
20
ID = 35 A
0
0.2
0.6
1
4
8
20
12 16
0.4
0.8
Common source
Tc
= 25C
Pulse test
10
Tc
= -55C
Common source
VDS = 10 V
Pulse test
25
100
0
0
20
60
100
2 4
10
6 8
40
80
0.1
0.001
1
100
0.01
10
Common source
Tc
= 25C
Pulse test
4
VGS = 10 V
25
Tc
= -55C
100
100
1
1 100
Common source
VDS = 10 V
Pulse test
10
10
2SK3236
2002-08-12
4
R
DS (ON)
- Tc
I
DR
- V
DS
V
th
- Tc
P
D
- Tc
Dynamic input/output characteristics
Case temperature Tc (C)
Drain-source voltage V
DS
(V)
Case temperature Tc (C)
Case temperature Tc (C)
Total gate charge Q
g
(nC)
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I
DR
(A
)
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(
W
)
Gate
th
res
hol
d vol
t
a
ge
V
th
(V
)
C
apaci
t
anc
e C
(p
F)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
(W
)
Gate
-so
u
r
c
e
v
o
l
t
age
V
GS
(V
)
Capacitance V
DS
Drain-source voltage V
DS
(V)
0
-80
-40
0
40
80 120 160
0.5
1
1.5
2.5
3
2
Common source
VDS = 10 V
ID = 1 mA
Pulse test
1
0.0
-0.4
-1.2
10
100
Common source
Tc
= 25C
Pulse test
-0.8
-1.6
-2.0
VGS = 0 V
3
5
1
10
Crss
Ciss
Coss
100000
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25C
0.1
10000
1000
100
1 10 100
0
0 40
120
160
10
30
50
20
80
40
0
-80
-40 0 40
80 120 160
0.02
0.04
0.06
0.08
0.1
VGS = 10 V
VGS = 4 V
10
20
10
35
20
Common source
Pulse test
0
0
40
80
40
80
Common source
ID = 35 A
Tc
= 25C
Pulse test
60
20
60
20
24
12
VDD = 48 V
VDS
VGS
0
10
20
5
15
2SK3236
2002-08-12
5
r
th
- t
w
Safe operating area
E
AS
T
ch
Drain-source voltage V
DS
(V)
Pulse width t
w
(S)
Channel temperature (initial) Tch (C)
N
o
r
m
al
i
z
ed t
r
a
n
si
e
n
t t
h
e
r
m
a
l
i
m
pe
da
nc
e
r
th (t)
/R
th (c
h-c)
A
v
al
anc
he
en
er
gy E
AS
(mJ
)
D
r
ai
n
cu
rre
nt
I D
(A
)
1
0.1
10
m 100
m
10
1 m
10 m
100 m
1
10
Single pulse
0.2
0.1
0.05
0.02
0.01
T
PDM
t
Duty
= t/T
Rth (ch-c) = 4.16C/W
Duty
= 0.5
0.01
0
25
20
40
60
80
50
75
100 125 150
0.1
0.1
1
10
100
1000
1 10
100
* Single nonrepetitive pulse
Tc
= 25C
Curves must be derated linearly
with increase in temperature.
DC operation
Tc
= 25C
100
ms *
1 ms *
ID max (pulse) *
ID max
(continuous)
VDSS max
0
V
15 V
Test circuit
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
= 25 W
V
DD
= 50 V, L = 40 mH
-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
2SK3236
2002-08-12
6
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
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The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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