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2SK3302
2002-09-04
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3302
Switching Regulator, DC-DC Converter Applications
Low drain-source ON resistance: R
DS (ON)
= 11.5 (typ.)
High forward transfer admittance: |Y
fs
| = 0.4 S (typ.)
Low leakage current: I
DSS
= 100 A (max) (V
DS
= 500 V)
Enhancement-model: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
500 V
Drain-gate voltage (R
GS
= 20 kW) V
DGR
500 V
Gate-source voltage
V
GSS
30 V
DC (Note
1) I
D
0.5
Drain current
Pulse (Note
1)
I
DP
1.5
A
Drain power dissipation
P
D
1.3
W
Single pulse avalanche energy
(Note
2)
E
AS
14.3
mJ
Avalanche current
I
AR
0.5 A
Repetitive avalanche energy (Note 3)
E
AR
0.13
mJ
Channel temperature
T
ch
150 C
Storage temperature range
T
stg
-55~150 C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to ambient
R
th (ch-a)
96.1
C/W
Note 1: Please use devise on condition that the channel temperature is below 150C.
Note 2: V
DD
= 90 V, T
ch
= 25C, L = 100 mH, R
G
= 25 W, I
AR
= 0.5 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-8MIB
Weight: 1.9 g (typ.)
2SK3302
2002-09-04
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 25 V, V
DS
= 0 V
10
mA
Gate-source breakdown voltage
V
(BR) GSS
I
G
= 10 mA, V
GS
= 0 V
30
V
Drain cut-OFF current
I
DSS
V
DS
= 500 V, V
GS
= 0 V
100
mA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
500
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
2.0
4.0 V
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 0.25 A
10 18 W
Forward transfer admittance
Y
fs
V
DS
= 10 V, I
D
= 0.25 A
0.2
0.4
S
Input capacitance
C
iss
75
Reverse transfer capacitance
C
rss
7
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
24
pF
Rise time
t
r
11
Turn-ON time
t
on
18
Fall time
t
f
54
Switching time
Turn-OFF time
t
off
95
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
3.8
Gate-source charge
Q
gs
1.9
Gate-drain ("miller") charge
Q
gd
V
DD
~
- 400 V, V
GS
= 10 V, I
D
= 0.5 A
1.9
nC
Source-Drain Ratings and Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
0.5 A
Pulse drain reverse current
(Note 1)
I
DRP
1.5 A
Forward voltage (diode)
V
DSF
I
DR
= 0.5 A, V
GS
= 0 V
-1.5
V
Reverse recovery time
t
rr
190 ns
Reverse recovery charge
Q
rr
I
DR
= 0.5 A, V
GS
= 0 V,
dI
DR
/dt
= 100 A/ms
380 nC
Marking
Type
K3302
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty <= 1%, t
w
= 10 ms
0 V
10
V
V
GS
R
L
= 1 kW
V
DD
~
- 250 V
I
D
= 0.25 A
V
OUT
4.
7
9
2SK3302
2002-09-04
3
Drain-source voltage VDS (V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Drain-source voltage VDS (V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage VGS (V)
I
D
V
GS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage VGS (V)
V
DS
V
GS
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Drain current I
D
(A)
|Y
fs
| I
D
Fo
rw
ar
d t
r
a
n
sfe
r
ad
mi
ttanc
e
|Y
fs
| (S
)
Drain current I
D
(A)
R
DS (ON)
I
D
D
r
ai
n
-
so
urc
e
O
N
r
e
si
stanc
e
R
DS
(ON)
(
9
)
0
VGS = 3.75 V
10
0 2 4 6 8 10
0.1
0.2
0.3
0.4
0.5
Common source
Ta
= 25C
Pulse test
8
6
5.5
5
4.75
4.25
4.5
4
0
VGS = 4 V
0
10
20
30 40 50
0.2
0.4
0.6
0.8
1.0
8
Common source
Ta
= 25C
Pulse test
10
6
5.75
5.5
5.25
5
4.75
4.5
4.25
0
0 2 4 6 8 10
0.2
0.4
0.6
0.8
1.0
Common source
VDS = 20 V
Pulse test
100
Ta
= -55C
25
0
0
4
8
12 16 20
4
8
12
16
20
Common source
Ta
= 25C
Pulse test
ID = 0.5 A
0.25
0.12
0.1
0.05
0.1
1
0.3
0.3
1
0.5
0.5
Common source
VDS = 20 V
Pulse test
Ta
= -55C
100
25
1
0.01
0.03 0.05
0.1
0.3
0.5
1
3
5
10
30
Common source
Ta
= 25C
Pulse test
2SK3302
2002-09-04
4
Ambient temperature Ta (C)
R
DS (ON)
Ta
D
r
ai
n
-
so
urc
e
O
N
r
e
si
stanc
e
R
DS
(ON)
(
9
Drain-source voltage VDS (V)
I
DR
V
DS
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I
DR
(A
)
Drain-source voltage VDS (V)
Capacitance V
DS
C
apaci
t
anc
e C
(p
F)
Ambient temperature Ta (C)
V
th
Ta
Gate
th
res
hol
d vol
t
a
ge
V
th
(V
)
Ambient temperature Ta (C)
P
D
Ta
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
(W
)
Gate
-so
u
r
c
e
v
o
l
t
age
V
GS
(V
)
Total gate charge Q
g
(nC)
Dynamic input/output characteristics
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
24
0
-80
-40 120
160
40
8
16
40
32
0
80
Common source
VGS = 10 V
Pulse test
ID = 0.1 A
0.25
0.5
0.01
0
0.2
0.4
0.6 0.8 1.0 1.2
1
0.1
Common source
Tc
= 25C
Pulse test
0.03
0.05
0.3
0.5
VGS = 0, -1 V
3
1
10
0.1 1 10 100
1
10
100
0.3 0.5
3
5
30 50
3
5
30
50
300
Common source
VGS = 0 V
f
= 1 MHz
Ta
= 25C
Ciss
Coss
Crss
0
1
2
3
5
-80
-40
0
40
80
120
160
4
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
0 40 80 120
160
200
0.4
0.8
1.2
1.6
0
2
8
10
4
4
8
12
16
20
0
100
200
300
400
500
6
Common source
ID = 0.5 A
Ta
= 25C
Pulse test
VDD = 100 V
200
VDS
VGS
0
400
2SK3302
2002-09-04
5
-15 V
15
V
Test circuit
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
= 25 W
V
DD
= 90 V, L = 100 mH
-
=
DD
V
VDSS
B
VDSS
B
2
I
L
2
1
AS
E
r
th
- t
w
Pulse width tw (s)
Norm
al
i
z
ed t
r
ans
i
e
n
t
t
herm
a
l
i
m
pe
danc
e
r
th (t)
/R
th (c
h-a)
Drain current I
D
(A)
Safe operating area
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Channel temperature Tch (C)
E
AS
- T
ch
A
v
al
anc
he
en
er
gy E
AS
(
m
J)
0.001
100
m
1 m
10 m
100 m
1
10
100
0.01
0.1
1
Duty
= 0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
T
PDM
t
Duty
= t/T
Rth (ch-a) = 96.1C/W
0.003
0.005
0.03
0.05
0.3
0.5
3
0.001
0.1
0.01
1
10
1 10
1000
100
* Single nonrepetitive pulse
Ta
= 25C
Curves must be derated linearly
with increase in temperature.
0.1
100
ms *
1 ms *
ID max (pulsed) *
ID max (continuous)
DC operation Ta
= 25C
VDSS max
0
25
50
75
100 150
125
4
8
12
16
20
2SK3302
2002-09-04
6
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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