2SK3397
2002-02-27
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
2SK3397
Relay Drive and DC-DC Converter Applications
Motor Drive Applications
Low drain-source ON resistance: R
DS (ON)
= 4.0 m (typ.)
High forward transfer admittance:
Y
fs
= 110 S (typ.)
Low leakage current: I
DSS
= 10 A (max) (V
DS
= 30 V)
Enhancement-model: V
th
= 1.5 to 3.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Tc
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
30 V
Drain-gate voltage (R
GS
=
20 k
) V
DGR
30 V
Gate-source voltage
V
GSS
20 V
DC (Note
1)
I
D
70
Drain current
Pulse (Note 1)
I
DP
210
A
Drain power dissipation
P
D
125 W
Single pulse avalanche energy
(Note
2)
E
AS
273 mJ
Avalanche current
I
AR
70
A
Repetitive avalanche energy (Note 3)
E
AR
12.5
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-
55 to150
C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
1.0
C/W
Note 1: Please use devices on condition that the channel temperature
is below 150C.
Note 2: V
DD
=
25 V, T
ch
=
25C (initial), L
=
40
H, I
AR
=
70 A,
R
G
=
25
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA SC-97
TOSHIBA 2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
1
3
4
2SK3397
2002-02-27
2
Electrical Characteristics
(Tc
=
=
=
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
16 V, V
DS
=
0 V
10
A
Drain cut-OFF current
I
DSS
V
DS
=
30 V, V
GS
=
0 V
10
A
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
30
Drain-source breakdown voltage
V
(BR) DSX
I
D
=
10 mA, V
GS
=
-
20 V
15
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
1 mA
1.5
3..0 V
Drain-source ON resistance
R
DS (ON)
V
GS
=
10 V, I
D
=
35 A
4.0 6.0 m
Forward transfer admittance
Y
fs
V
DS
=
10 V, I
D
=
35 A
55
110
S
Input capacitance
C
iss
5000
Reverse transfer capacitance
C
rss
550
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
1000
pF
Rise time
t
r
8.0
Turn-ON time
t
on
25
Fall time
t
f
48
Switching time
Turn-OFF time
t
off
180
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
110
Gate-source charge
Q
gs
87
Gate-drain ("miller") charge
Q
gd
V
DD
-
24 V, V
GS
=
10 V, I
D
=
70 A
23
nC
Source-Drain Ratings and Characteristics
(Tc
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
70 A
Pulse drain reverse current
(Note 1)
I
DRP
210 A
Forward voltage (diode)
V
DSF
I
DR
=
70 A, V
GS
=
0 V
-
1.7
V
Reverse recovery time
t
rr
40
ns
Reverse recovery charge
Q
rr
I
DR
=
70 A, V
GS
=
0 V,
dI
DR
/dt
=
30 A/
s
40
nC
Marking
Duty
<
=
1%, t
w
=
10
s
0 V
10
V
V
GS
R
L
=
0.43
V
DD
-
15 V
I
D
=
35
A
V
OUT
4.
7
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Type
K3397
2SK3397
2002-02-27
3
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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000707EAA
RESTRICTIONS ON PRODUCT USE
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