2SK3398
2002-09-04
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3398
Switching Regulator and DC-DC Converter Applications
and Motor Drive Applications
Low drain-source ON resistance: R
DS (ON)
= 0.4 m (typ.)
High forward transfer admittance: |Y
fs
| = 9.0 S (typ.)
Low leakage current: I
DSS
= 100 A (max) (V
DS
= 500 V)
Enhancement-model: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
500 V
Drain-gate voltage (R
GS
= 20 kW) V
DGR
500 V
Gate-source voltage
V
GSS
30 V
DC (Note
1)
I
D
12
Drain current
Pulse (Note 1)
I
DP
48
A
Drain power dissipation (Tc
= 25C)
P
D
100 W
Single pulse avalanche energy
(Note
2)
E
AS
364 mJ
Avalanche current
I
AR
12
A
Repetitive avalanche energy (Note 3)
E
AR
10
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55 to150
C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
1.25
C/W
Note 1: Please use devices on condition that the channel temperature
is below 150C.
Note 2: V
DD
= 90 V, T
ch
= 25C (initial), L = 5.85 mH, R
G
= 25 W,
I
AR
= 12 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA SC-97
TOSHIBA 2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
1
3
4
2SK3398
2002-09-04
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 25 V, V
DS
= 0 V
10
mA
Drain-source breakdown voltage
V
(BR) GSS
I
G
= 10 mA, V
DS
= 0 V
30
V
Drain cut-OFF current
I
DSS
V
DS
= 500 V, V
GS
= 0 V
100
mA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
500
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
2.0
4.0 V
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 6 A
0.4 0.52
W
Forward transfer admittance
Y
fs
V
DS
= 10 V, I
D
= 6 A
4.0
9.0
S
Input capacitance
C
iss
2040
Reverse transfer capacitance
C
rss
200
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
630
pF
Rise time
t
r
22
Turn-ON time
t
on
58
Fall time
t
f
36
Switching time
Turn-OFF time
t
off
180
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
45
Gate-source charge
Q
gs
25
Gate-drain ("miller") charge
Q
gd
V
DD
~
- 400 V, V
GS
= 10 V, I
D
= 10 A
20
nC
Source-Drain Ratings and Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
12 A
Pulse drain reverse current
(Note 1)
I
DRP
48 A
Forward voltage (diode)
V
DSF
I
DR
= 12 A, V
GS
= 0 V
-1.7
V
Reverse recovery time
t
rr
1200
ms
Reverse recovery charge
Q
rr
I
DR
= 12 A, V
GS
= 0 V,
dI
DR
/dt
= 100 A/ms
16
mC
Marking
Duty <= 1%, t
w
= 10 ms
0 V
10
V
V
GS
R
L
= 33 W
V
DD
~
- 200 V
I
D
= 6 A
V
OUT
50
9
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Type
K3398
2SK3398
2002-09-04
3
Fo
rw
ar
d t
r
a
n
sfe
r
ad
mi
ttanc
e
Y
fs
(
S
)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
I
D
V
GS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
V
DS
V
GS
Drain current I
D
(A)
Y
fs
- I
D
Drain current I
D
(A)
R
DS (ON)
- I
D
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(
9
)
0
12
2
8
6
10
4
2
0
10
4 6 8
VGS = 4 V
5
5.2
4.25
4.5
4.75
10
Common
source
Tc
= 25C
pulse test
15
6
0
24
4
16
8
20
100
25
Tc
= -55C
Common source
VDS = 20 V
pulse test
12
0 2 4 6 8 10 12
0
24
4
16
12
20
VGS = 4.0 V
5.75
6.0
10
15
4.75
5.2
5.5
4.5
Common source
Tc
= 25C
pulse test
8
0 10 20 30 40 50 60
5.0
0
12
2
8
6
10
3
ID = 12 A
Common source
Tc
= 25C
pulse test
6
4
0 4 8 12 16 20 24
0.3
0.1
30
30
10
3
1 3 10
0.3
5
5
1
Common source
VDS = 20 V
Pulse test
Tc
= -55C
25
100
0.5
0.5
0.3
10
1
0.1
0.5
Common source
Tc
= 25C
Pulse test
VGS = 10, 15 V
3
5
0.1 30
1 3 10
0.3 5
0.5
2SK3398
2002-09-04
4
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
(W
)
Gate
th
res
hol
d vol
t
a
ge
V
th
(
V
)
Case temperature Tc (C)
R
DS (ON)
- Tc
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (ON)
(
W
)
Drain-source voltage V
DS
(V)
I
DR
- V
DS
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I
DR
(
A
)
Drain-source voltage V
DS
(V)
Capacitance V
DS
C
apaci
t
anc
e C
(p
F)
Case temperature Tc (C)
V
th
- Tc
Case temperature Tc (C)
P
D
- Tc
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Gate
-so
u
r
c
e
v
o
l
t
age
V
GS
(V
)
Total gate charge Q
g
(nC)
Dynamic input/output characteristics
50
10
30
20
40
0
0
80
120
160
200
40
0
2.5
0.5
1.5
1.0
2.0
-40
-80
160
0 40 80
0
-40
-80
160
0 40 80
ID = 12 A
6
Common source
VGS = 10 V
pulse test
3
0.1
100
0.3
3
30
-0.2
0
-1.2
-0.6
-0.4
-0.8
-1.0
10
5
1
VGS = 1 V
10
1
Common source
Tc
= 25C
pulse test
3
100
300
1000
1
0.1 100
10
Ciss
Coss
Crss
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25C
10
30
500
3000
0.3 0.5
3
5
30 50
5000
50
5
1
3
2
4
0
-80
0
40
80
120
160
-40
Common source
VDS = 10 V
ID = 1 mA
pulse test
600
100
300
200
400
0
0
24
6
16
12
20
0
400
VDD = 80 V
VGS
VDS
200
Common source
ID = 12 A
Tc = 25C
pulse test
500
10
20
30
40
50
60
8
2SK3398
2002-09-04
5
r
th
- t
w
Safe operating area
E
AS
T
ch
Drain-source voltage V
DS
(V)
Pulse width t
w
(S)
Channel temperature (initial) Tch (C)
N
o
r
m
al
i
z
ed t
r
a
n
si
e
n
t t
h
e
r
m
a
l
i
m
pe
da
nc
e
r
th (
t
)
/R
th
(c
h-c
)
A
v
al
anc
he
en
er
gy E
AS
(
m
J)
D
r
ai
n
cu
rre
nt
I
D
(A
)
0
25
100
200
300
500
400
50
75
100 125 150
0.003
10
m 100
m
1 m
10 m
100 m
1
10
0.01
0.1
0.03
0.3
1
3
0.01
0.02
0.05
0.1
0.2
Duty
= 0.5
Single Pulse
T
PDM
t
Duty
= t/T
Rth (ch-c) = 1.25C/W
0.03
1
0.3
3
30
100
10 100 1000
ID max (continuous)
ID max (pulsed) *
DC operation
Tc
= 25C
1 ms *
VDSS max
10
0.05
1
100
ms *
*: Single nonrepetitive pulse
Tc
= 25C
Curves must be derated
linearly with increase in
temperature.
0.01
0.1
0.5
50
5
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
= 25 W
V
DD
= 90 V, L = 4.3 mH
-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
Test circuit
-15 V
15
V
2SK3398
2002-09-04
6
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
This datasheet has been download from:
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