2SK3417
2002-08-12
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3417
Switching Regulator Applications
Reverse-recovery time: t
rr
= 60 ns (typ.)
Built-in high-speed flywheel diode
Low drain-source ON resistance: R
DS (ON)
= 1.6 (typ.)
High forward transfer admittance: Y
fs
= 4.0 S (typ.)
Low leakage current: I
DSS
= 100 A (max) (V
DS
= 500 V)
Enhancement-model: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
500 V
Drain-gate voltage (R
GS
= 20 kW) V
DGR
500 V
Gate-source voltage
V
GSS
30 V
DC (Note
1)
I
D
5
Drain current
Pulse (Note
1)
I
DP
20
A
Drain power dissipation (Tc
= 25C)
P
D
50 W
Single pulse avalanche energy
(Note
2)
E
AR
180 mJ
Avalanche current
I
AR
5 A
Repetitive avalanche energy (Note 3)
E
AR
5
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150 C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
2.5
C/W
Thermal resistance, channel to ambient
R
th (ch-a)
83.3
C/W
Note 1: Please use devise on condition that the channel temperature is
below 150C.
Note 2: V
DD
= 90 V, T
ch
= 25C (initial), L = 12.2 mH, R
G
= 25 W,
I
AR
= 5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-10S1B
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA 2-10S1B
Weight: 1.5 g (typ.)
2SK3417
2002-08-12
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 25 V, V
DS
= 0 V
10
mA
Drain-source breakdown voltage
V
(BR) GSS
I
G
= 100 mA, V
DS
= 0 V
30
V
Drain cut-OFF current
I
DSS
V
DS
= 500 V, V
GS
= 0 V
100
mA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
500
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
2.0
4.0 V
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 2.5 A
1.6 1.8 W
Forward transfer admittance
Y
fs
V
DS
= 10 V, I
D
= 2.5 A
2.5
4.0
S
Input capacitance
C
iss
780
Reverse transfer capacitance
C
rss
60
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
200
pF
Rise time
t
r
12
Turn-ON time
t
on
25
Fall time
t
f
15
Switching time
Turn-OFF time
t
off
60
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
17
Gate-source charge
Q
gs
11
Gate-drain ("miller") charge
Q
gd
V
DD
~
- 400 V, V
GS
= 10 V, I
D
= 5 A
6
nC
Source-Drain Ratings and Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
5 A
Pulse drain reverse current
(Note 1)
I
DRP
20 A
Forward voltage (diode)
V
DSF
I
DR
= 5 A, V
GS
= 0 V
-1.7
V
Reverse recovery time
t
rr
60 ns
Reverse recovery charge
Q
rr
I
DR
= 5 A, V
GS
= 0 V,
dI
DR
/dt
= 100 A/ms
0.1
mC
Marking
Type
K3417
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty <= 1%, t
w
= 10 ms
0 V
10 V
V
GS
R
L
= 90 W
V
DD
~
- 225 V
I
D
= 2.5 A
V
OUT
15
9
2SK3417
2002-08-12
3
10
0.1
1
0.1
1
10
Common source
Tc
= 20 C
Pulse test
15
VGS = 10 V
3
5
0.3
0.5
I
D
- V
DS
I
D
- V
DS
I
D
- V
GS
V
DS
- V
GS
Y
fs
- I
D
R
DS (ON)
- I
D
Drain-source voltage V
DS
(V)
Drain-source voltage V
DS
(V)
Gate-source voltage V
GS
(V)
Gate-source voltage V
GS
(V)
Drain current I
D
(A)
Drain current I
D
(A)
D
r
ai
n
cu
rre
nt
I
D
(A
)
D
r
ai
n
cu
rre
nt
I
D
(A
)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
D
r
ai
n
cu
rre
nt
I
D
(A
)
Drai
n-s
ourc
e
on re
s
i
st
anc
e
R
DS (
O
N
)
(
9
)
Fo
rw
ar
d t
r
a
n
sfe
r
ad
mi
ttanc
e
Y
fs
(
S
)
16
0
4
8
12
20
1.2
2.5
0
4
8
16
12 20
Common source
Tc
= 25C
Pulse test
ID = 5 A
4
0
0
1
2
3
5
4 8
16
12 20
VGS = 5 V
5.25
5.5
5.75
6
Common source
Tc
= 25C
Pulse test
15
10
6.5
6.25
8
0
0
2
4
6
10
10
20
40
30 50
VGS = 5 V
6
6.5
7
10
15
5.5
Common source
Tc
= 25C
Pulse test
0 2 4
8
6 10
Common source
VDS = 20 V
Pulse test
0
2
4
6
8
10
100
Tc
= 25C
10
0.1
1
0.1
1
10
Common source
VDS = 20 V
Pulse test
100
Tc
= 25C
2SK3417
2002-08-12
4
R
DS (ON)
- Tc
I
DR
- V
DS
Capacitance V
DS
V
th
- Tc
P
D
- Tc
Dynamic input/output characteristics
Channel temperature Tc (C)
Drain-source voltage V
DS
(V)
Drain-source voltage V
DS
(V)
Channel temperature Tc (C)
Case temperature Tc (C)
Total gate charge Q
g
(nC)
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I
DR
(
A
)
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (
O
N
)
(
9
)
Gate
th
res
hol
d vol
t
a
ge
V
th
(
V
)
C
apaci
t
anc
e C
(p
F)
Drai
n-s
ourc
e
v
o
l
t
age
V
DS
(V
)
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
(W
)
Gat
e
-s
ourc
e
v
o
l
t
age
V
GS
(V
)
10
20
10
0 40 80 120
200
30
40
160
50
100
200
0
0
5
10
15 25
300
400
20
500
4
8
0
12
16
20
Common source
ID = 5 A
Tc
= 25C
Pulse test
VDD = 100 V
VGS
400
200
VDS
0
2
4
6
8
10
0 40 80
120
160
Common source
VGS = 10 V
Pulse test
1.2
2.5
ID = 5 A
0
1
2
3
4
5
0
40
80
120 160
Common source
VDS = 10 V
ID = 1 mA
Pulse test
50
300
1000
5
0.1 0.3
3
10
100
100
10
500
2000
1 30
30
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25C
Ciss
Coss
Crss
50
5
0.5
Common source
Tc
= 25C
Pulse test
3
5
1
0.1
0
-0.4
-1.6
10
-0.8
-1.2
10
VGS = 0, 1 V
2SK3417
2002-08-12
5
Pulse width t
w
(S)
r
th
- t
w
E
AS
T
ch
Channel temperature (initial) Tch (C)
Norm
al
i
z
ed t
r
ans
i
e
n
t
t
herm
a
l
i
m
pe
danc
e
r
th (
t
)
/R
th
(c
h-
a)
A
v
al
anc
he
en
er
gy E
AS
(
m
J
)
-15 V
15
V
Test circuit
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
= 25 W
V
DD
= 90 V, L = 12.2 mH
-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
0
25
40
80
120
200
160
50
75
100 125 150
Safe operating area
Drain-source voltage V
DS
(V)
D
r
ai
n
cu
rre
nt
I
D
(A
)
DC operation
Tc
= 25C
0.01
1
10 100
1000
0.03
0.1
0.3
1
3
30
100
100
ms *
1 ms *
ID max (pulsed) *
*
Single nonrepetitive pulse
Tc
= 25C
Curves must be derated linearly
with increase in temperature.
10
ID max (continuous) *
VDSS max
0.001
0.001
1
0.1
10
m 100
m
10
1 m
10 m
100 m
1
10
Single pulse
0.2
0.1
0.05
0.02
0.01
T
PDM
t
Duty
= t/T
Rth (ch-c) = 3.57C/W
Duty
= 0.5
0.01
2SK3417
2002-08-12
6
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
This datasheet has been download from:
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