2SK3439
2001-12-11
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3439
DC-DC Converter
Relay Drive and Motor Drive Applications
Low drain-source ON resistance: R
DS (ON)
= 3.8 m (typ.)
High forward transfer admittance: |Y
fs
| = 70 S (typ.)
Low leakage current: I
DSS
= 100 A (max) (V
DS
= 30 V)
Enhancement-mode: V
th
= 1.3 to 2.5 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
30 V
Drain-gate voltage (R
GS
=
20 k
) V
DGR
30 V
Gate-source voltage
V
GSS
20 V
DC (Note
1)
I
D
75
Drain current
Pulse (t
<
=
1 ms)
(Note
1)
I
DP
300
A
Drain power dissipation (Tc
=
25C)
P
D
125
W
Single pulse avalanche energy
(Note
2)
E
AS
731
mJ
Avalanche current
I
AR
75
A
Repetitive avalanche energy (Note 3)
E
AR
12.5
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-
55 to 150
C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
1.00 C/W
Note 1: Please use devices on conditions that the channel temperature
is below 150C.
Note 2: V
DD
=
24 V, T
ch
=
25C (initial), L
=
100
H, R
G
=
25
,
I
AR
=
75 A
Note 3: Repetitive rating; pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Marking
Unit: mm
JEDEC
JEITA SC-97
TOSHIBA 2-9F1B
Weight: 0.74 g (typ.)
Notice:
Please use the S1 pin for gate
input signal return. Make
sure that the main current
flows into S2 pin.
1
2
3
4
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Type
K3439
2SK3439
2001-12-11
2
Electrical Characteristics
(Note 4) (Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
16 V, V
DS
=
0 V
10
A
Drain cut-off current
I
DSS
V
DS
=
30 V, V
GS
=
0 V
100
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
30
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
1 mA
1.3
2.5 V
V
GS
=
10 V, I
D
=
38 A
3.8 5.0
Drain-source ON resistance
R
DS (ON)
V
GS
=
4 V, I
D
=
38 A
5.0 10
m
Forward transfer admittance
|Y
fs
| V
DS
=
10 V, I
D
=
38 A
35 70
S
Input capacitance
C
iss
5450
Reverse transfer capacitance
C
rss
620
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
1850
pF
Rise time
t
r
15
Turn-on time
t
on
30
Fall time
t
f
65
Switching time
Turn-off time
t
off
Duty
<
=
1%, t
w
=
10
s
110
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
116
Gate-source charge
Q
gs
84
Gate-drain ("miller") charge
Q
gd
V
DD
34 V, V
GS
=
10 V, I
D
=
75 A
32
nC
Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin.
(However, while switching times are measured, please don't connect and ground it.)
Source-Drain Ratings and Characteristics
(Note 5) (Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1, Note 5)
I
DR
1
75 A
Pulse drain reverse current
(Note 1, Note 5)
I
DRP
1
300 A
Continuous drain reverse current
(Note 1, Note 5)
I
DR
2
1
A
Pulse drain reverse current
(Note 1, Note 5)
I
DRP
2
4
A
Forward voltage (diode)
V
DS2F
I
DR
1
=
75 A, V
GS
=
0 V
-
1.5
V
Reverse recovery time
t
rr
120
ns
Reverse recovery charge
Q
rr
I
DR
=
75 A, V
GS
=
0 V,
dI
DR
/dt
=
50 A/
s
180
nC
Note 5: drain, flowing current value between the S2 pin, open the S1 pin
drain, flowing current value between the S1 pin, open the S2 pin
Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin.
R
L
=
0.
39
V
DD
15 V
0 V
V
GS
10 V
4.
7
I
D
=
38 A
V
OUT
2SK3439
2001-12-11
3
Fo
r
w
ar
d t
r
a
n
sfe
r
adm
i
tta
nce
Y
fs
(
S
)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge V
DS
(V
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Drain-source voltage V
DS
(V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
I
D
V
GS
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage V
GS
(V)
V
DS
V
GS
Drain current I
D
(A)
Y
fs
I
D
Drain current I
D
(A)
R
DS (ON)
I
D
D
r
ai
n
-
so
urc
e
on resi
s
t
an
ce
R
DS
(ON)
(m
)
100
80
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0
VGS
=
2.8 V
3.5
4
6
8
10
Common source
Tc
=
25C
Pulse test
3.3
3.0
100
80
60
40
20
0
0 1 2 3 4 5
VGS
=
2.8 V
10
3.4
6
4
3.2
3.0
Common source
Tc
=
25C
Pulse test
0
0 2
6
4
40
80
120
160
Common source
VDS
=
10 V
Pulse test
100
25
Tc
=
-
55C
1 3
5
10 30
50
100
300
3
5
10
30
50
100
300
500
Tc
=
-
55C
100
25
Common source
VDS
=
10 V
Pulse test
100
1 10
3 5
30 50
1
10
5
30
3
0.5
Common source
Tc
=
25C
Pulse test
VGS
=
4 V
10
0.6
0.4
0
0 5 10 15
20
0.2
0.8
ID
=
75 A
Common source
Tc
=
25C
Pulse test
38
19
2SK3439
2001-12-11
4
D
r
ai
n
po
w
e
r
di
ssi
pati
on
P
D
(
W
)
Gate
th
res
hol
d vol
t
ag
e
V
th
(V
)
Case temperature Tc (C)
R
DS (ON)
Tc
D
r
ai
n
-
so
urc
e
on resi
s
t
an
ce
R
DS
(ON)
(m
)
Drain-source voltage V
DS
(V)
I
DR
V
DS
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I
DR
(A
)
Drain-source voltage V
DS
(V)
Capacitance V
DS
C
apa
ci
ta
nce
C
(
p
F)
Case temperature Tc (C)
V
th
Tc
Case temperature Tc (C)
P
D
Tc
Gate
-so
u
r
c
e v
o
l
t
a
ge
V
GS
(V
)
Total gate charge Q
g
(nC)
Dynamic input/output characteristics
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge V
DS
(V
)
-
40 0 40 80 120
160
-
80
Common source
VDS
=
10 V
Pulse test
3
1
0
ID
=
75 A
2
5
4
6
19, 38
0
1
2
3
4
Common source
VDS
=
10 V
ID
=
1 mA
Pulse test
-
80
-
40 0 40
120
160
80
0
-
0.2
-
0.4
-
0.6
-
0.8
-
1.0
-
1.2
0.1
3
10
100
300
5
30
50
Common source
Tc
=
25C
Pulse test
VGS
=
0 V
1
3
5
10
0.3
0.5
1
Common source
VGS
=
0 V
f
=
1 MHz
Tc
=
25C
100
300
1000
3000
10000
0.1 0.3 1 3 10 30
Ciss
Coss
Crss
200
120
10
0 40 80 120
160
40
80
160
200
0
4
8
16
20
12
0
10
30
40
50
20
Common source
ID
=
75 A
Tc
=
25C
Pulse test
0 80 160
40
120 200
VDS
VDD
=
24 V
12
VGS
6
2SK3439
2001-12-11
5
Channel temperature (initial) T
ch
(C)
E
AS
T
ch
A
v
al
anc
he
en
er
g
y
E
AS
(
m
J)
r
th
t
w
Pulse width t
w
(s)
N
o
rm
al
i
z
ed t
r
a
n
si
e
n
t t
h
e
r
m
a
l
i
m
pe
da
nc
e
r
th
(t)
/R
th
(c
h
-
c)
Drain-source voltage V
DS
(V)
D
r
ai
n
cu
rre
nt
I
D
(A
)
Safe operating area
10
0.01
0.00001
0.1
1
3
0.0001 0.001 0.01
0.1
1
T
PDM
t
Duty
=
t/T
Rth (ch-c)
=
1.0C/W
Duty
=
0.5
0.2
0.1
Single
0.05
0.02
0.01
0.3
0.03
0
V
15
V
Test circuit
Waveform
I
AR
B
VDSS
V
DD
V
DS
R
G
=
25
V
DD
=
24 V, L
=
100
H
-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
1000
800
600
400
200
0
25 50 75 100 125 150
0.1
0.1
1
10
100
300
1 10
100
*: Single nonrepetitive pulse
Tc
=
25C
Curves must be derated
linearly with increase in
temperature
ID max (continuous)
ID max (pulsed) *
100
s *
DC operation
Tc
=
25C
1 ms *
VDSS max
30
0.3
3
2SK3439
2001-12-11
6
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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