2SK3466
2002-02-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3466
Chopper Regulator
Low drain-source ON resistance: R
DS (ON)
= 1.35 (typ.)
High forward transfer admittance: Y
fs
= 4.0 S (typ.)
Low leakage current: I
DSS
= 100 A (max) (V
DS
= 500 V)
Enhancement-model: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
500 V
Drain-gate voltage (R
GS
= 20 kW) V
DGR
500 V
Gate-source voltage
V
GSS
30 V
DC (Note
1) I
D
5
Drain current
Pulse (Note
1)
I
DP
20
A
Drain power dissipation (Tc
= 25C)
P
D
50 W
Single pulse avalanche energy
(Note
2)
E
AS
180 mJ
Avalanche current
I
AR
5 A
Repetitive avalanche energy (Note 3)
E
AR
5
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55 to 150
C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
2.5
C/W
Note 1: Please use devises on condition that the channel temperature
is below 150C.
Note 2: V
DD
= 90 V, T
ch
= 25C (initial), L = 12.2 mH, R
G
= 25 W,
I
AR
= 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA SC-97
TOSHIBA 2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
1
3
4
2SK3466
2002-02-06
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 25 V, V
DS
= 0 V
10
mA
Drain cut-OFF current
I
DSS
V
DS
= 500 V, V
GS
= 0 V
100
mA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
500
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
2.0
4.0 V
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 5 A
1.35 1.50
W
Forward transfer admittance
Y
fs
V
DS
= 10 V, I
D
= 5 A
2.5
4.0
S
Input capacitance
C
iss
780
Reverse transfer capacitance
C
rss
60
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
200
pF
Rise time
t
r
12
Turn-ON time
t
on
25
Fall time
t
f
15
Switching time
Turn-OFF time
t
off
60
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
17
Gate-source charge
Q
gs
11
Gate-drain ("miller") charge
Q
gd
V
DD
~
- 400 V, V
GS
= 10 V, I
D
= 5 A
6
nC
Source-Drain Ratings and Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DSF
5 A
Pulse drain reverse current
(Note 1)
I
DRP
20 A
Forward voltage (diode)
V
DSF
I
DR
= 5 A, V
GS
= 0 V
-1.7
V
Reverse recovery time
t
rr
1400 ns
Reverse recovery charge
Q
rr
I
DR
= 5 A, V
GS
= 0 V,
dI
DR
/dt
= 100 A/ms
9
mC
Marking
Duty <= 1%, t
w
= 10 ms
0 V
10
V
V
GS
R
L
= 90 W
V
DD
~
- 225 V
I
D
= 2.5 A
Output
15
W
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Type
K3466
2SK3466
2002-02-06
3
D
r
ai
n
cu
rre
nt
I
D
(A
)
I
D
V
DS
I
D
V
DS
I
D
V
GS
V
DS
V
GS
Y
fs
- I
D
R
DS (ON)
- I
D
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage VGS (V)
D
r
ai
n
cu
rre
nt
I
D
(A
)
Gate-source voltage VGS (V)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Drain current I
D
(A)
Fo
rw
ar
d
t
r
a
n
sfe
r
ad
mi
ttanc
e |Y
fs
|
(S
)
Drain current I
D
(A)
D
r
ai
n
-
so
urc
e
O
N
r
e
si
stanc
e
R
DS
(ON)
(
9
)
0
0
1
2
3
5
4
2 4 6 8 10
Common source
Tc
= 25C
Pulse test
VGS = 4 V
4.5
4.75
5.25
5.5
6
10, 15
5
0
0
2
4
6
10
8
10
20
30 40 50
Common source
Tc
= 25C
Pulse test
VGS = 4 V
4.5
5.5
6
5
15
10
0
0
2
4
6
10
8
2 4 6 8 10
Common source
VDS = 20 V
Pulse test
100
25
Tc
= -55C
0
0
4
8
12
20
16
4
8
12 16 20
Common source
Tc
= 25C
Pulse test
ID = 5 A
2.5
1.2
0.1
0.3
1
3
10
5
0.3 0.5
1
5
10
Common source
VDS = 20 V
Pulse test
Tc
= -55C
3
100
25
0.5
0.1
0.3
1
3
10
5
0.3
0.5
1
5 10
Common source
Tc
= 25C
Pulse test
VGS = 10 V
3
15
0.5
2SK3466
2002-02-06
4
Dynamic input/output characteristics
0
0
20
40
80
60
40 80 120
160 200
R
DS (ON)
- Tc
I
DR
- V
DS
Capacitance V
DS
V
th
- Tc
P
D
- Tc
-80
1
3
5
4
-40
0
40
120 160
Common source
VDS = 10 V
ID = 1 mA
Pulse test
80
2
0
Case temperature Tc (C)
D
r
ai
n
-
so
urc
e
O
N
r
e
si
stanc
e
R
DS
(ON)
(
9
Drain-source voltage VDS (V)
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I
DR
(A
)
Drain-source voltage VDS (V)
C
apaci
t
anc
e C
(p
F)
Case temperature Tc (C)
Gate
th
res
hol
d vol
t
a
ge
V
th
(V
)
Case temperature Tc (C)
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
(W
)
Gate
-so
u
r
c
e
v
o
l
t
age
V
GS
(V
)
Total gate charge Q
g
(nC)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
0
0
100
200
300
500
400
5
10
15 20 25
Common source
ID = 5 A
Tc
= 25C
Pulse test
VDD = 100 V
VGS
VDS
400
200
0
4
8
12
20
16
-80
1
3
5
4
-40 0 40
120 160
Common source
VGS = 10 V
Pulse test
ID = 5 A
80
1.2
2
0
2.5
10
0
0.3
1
10
3
-0.2
-0.4
-0.6
-1.0
-1.2
Common source
Tc
= 25C
Pulse test
-0.8
0.5
0.1
5
3
1
VGS = 0, -1 V
0.1
10
100
2000
300
0.3 0.5
3
10
100
5
30
5
1 30
50
50
1000
500
Crss
Coss
Ciss
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25C
2SK3466
2002-02-06
5
10
m
0.003
0.005
0.01
0.03
0.05
0.1
0.3
0.5
1
3
30
m 100
m 300
m
1 m
3 m
10 m
30 m
100 m
3
10
300 m
1
Duty
= 0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
T
PDM
t
Duty
= t/T
Rth (ch-c) =2.5C/W
r
th
- t
w
E
AS
T
ch
-15 V
15
V
Test circuit
Wave form
I
AR
B
VDSS
V
DD
V
DS
R
G
= 25 W
V
DD
= 90 V, L = 12.2 mH
-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
DC operation
Tc
= 25C
1 ms *
100
ms *
ID max (pulsed) *
ID max (continuous) *
* Single nonrepetitive
pulse Tc
= 25C
Curves must be derated
linearly with increase in
temperature.
VDSS max
0.01
1
0.03
0.05
0.1
0.3
0.5
1
3
5
10
30
50
100
3 5 10
30 50 100
300
500
1000
25
40
120
200
50
75
150
100 125
80
160
0
Pulse width tw (s)
Norm
al
i
z
ed t
r
ans
i
e
n
t
t
herm
a
l
i
m
pe
danc
e
r
th (t)
/R
th (c
h-c)
Drain-source voltage VDS (V)
Safe operating area
D
r
ai
n
cu
rre
nt
I
D
(A
)
Channel temperature (initial) Tch (C)
A
v
al
anc
he
en
er
gy E
AS
(
m
J)
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