2SK3498
2002-02-27
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3498
DC-DC Converter, Relay Drive and Motor Drive
Applications
Low drain-source ON resistance: R
DS (ON)
= 4.0 (typ.)
High forward transfer admittance:
Y
fs
= 0.6 S (typ.)
Low leakage current: I
DSS
= 100 A (max) (V
DS
= 400 V)
Enhancement-model: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Tc
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
400 V
Drain-gate voltage (R
GS
=
20 k
) V
DGR
400 V
Gate-source voltage
V
GSS
30 V
DC (Note
1)
I
D
1
Drain current
Pulse (Note 1)
I
DP
3
A
Drain power dissipation
P
D
20 W
Single pulse avalanche energy
(Note
2)
E
AS
113 mJ
Avalanche current
I
AR
1
A
Repetitive avalanche energy (Note 3)
E
AR
2
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-
55 to150
C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
6.25
C/W
Thermal resistance, channel to ambient
R
th (ch-a)
125
C/W
Note 1: Please use devices on condition that the channel temperature
is below 150C.
Note 2: V
DD
=
90 V, T
ch
=
25C (initial), L
=
183 mH, R
G
=
25
,
I
AR
=
1 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA SC-64
TOSHIBA 2-7B1B
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA 2-7J1B
Weight: 0.36 g (typ.)
2SK3498
2002-02-27
2
Electrical Characteristics
(Tc
=
=
=
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
25 V, V
DS
=
0 V
10
A
Drain-source breakdown voltage
V
(BR) GSS
I
G
=
10
A, V
DS
=
0 V
30
V
Drain cut-OFF current
I
DSS
V
DS
=
400 V, V
GS
=
0 V
100
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
450
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
1 mA
2.0
4.0 V
Drain-source ON resistance
R
DS (ON)
V
GS
=
10 V, I
D
=
0.5 A
4.2 5.5
Forward transfer admittance
Y
fs
V
DS
=
10 V, I
D
=
0.5 A
0.3
0.6
S
Input capacitance
C
iss
145
Reverse transfer capacitance
C
rss
35
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
80
pF
Rise time
t
r
14
Turn-ON time
t
on
56
Fall time
t
f
26
Switching time
Turn-OFF time
t
off
75
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
5.7
Gate-source charge
Q
gs
3.0
Gate-drain ("miller") charge
Q
gd
V
DD
-
320 V, V
GS
=
10 V, I
D
=
1 A
2.7
nC
Source-Drain Ratings and Characteristics
(Tc
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
1 A
Pulse drain reverse current
(Note 1)
I
DRP
3 A
Forward voltage (diode)
V
DSF
I
DR
=
1 A, V
GS
=
0 V
-
1.7
V
Reverse recovery time
t
rr
650
ns
Reverse recovery charge
Q
rr
I
DR
=
1 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/
s
14.6
C
Marking
Duty
<
=
1%, t
w
=
10
s
0 V
10
V
V
GS
R
L
=
400
V
DD
-
200 V
I
D
=
0.5
A
V
OUT
50
Type
K3498
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
2SK3498
2002-02-27
3
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
PDF 
ZIP