2SK3759
2004-02-26
1
10.5 max
3.840.2
6.6 max.
2.7
15.6 max.
13.4 min.
1.5 max
0.81 max
2.54
3.9
max.
4.7 max
1.3
0.45
2.7
1 2 3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS
)
2SK3759
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 0.75 (typ.)
High forward transfer admittance: |Y
fs
| = 6.5S (typ.)
Low leakage current: I
DSS
= 100 A (V
DS
= 500 V)
Enhancement-mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
500
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
500
V
Gate-source voltage
V
GSS
30
V
DC
(Note 1)
I
D
8
Pulse (t
=
1 ms)
(Note 1)
I
DP
32
Drain power dissipation (Tc
=
25C)
P
D
74
W
Single pulse avalanche energy
(Note 2)
E
AS
48
mJ
Avalanche current
I
AR
8
A
Repetitive avalanche energy (Note 3)
E
AR
7.4
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150
C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
1.68
C/W
Thermal resistance, channel to ambient
R
th (ch-a)
83.3
C/W
Note 1: Please use devices on conditions that the channel temperature is below 150C.
Note 2: V
DD
=
90 V, T
ch
=
25C(initial), L
=
1.28 mH, I
AR
=
8 A, R
G
=
25
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
unit
1
3
2
Weight : 2.0g(typ.)
1. Gate
2. Drain(HEAT SINK)
3. Source
JEDEC
JEITA
TOSHIBA
TO-220AB
SC-46
1.5 max
2.54
3.9 max
13.4 min
15.6 max
3.840.2
10.5 max
6.6 max
4.7 max
1.3
0.45
2.7
0.81
2SK3759
2004-02-26
2
Electrical Characteristics
(Ta
=
25C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
25 V, V
DS
=
0 V
10
A
Gate-source breakdown voltage
V
(BR) GSS
I
D
=
10
A, V
GS
=
0 V
30
V
Drain cut-off current
I
DSS
V
DS
=
500 V, V
GS
=
0 V
100
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
500
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
1 mA
2.0
4.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
=
10 V, I
D
=
4 A
0.75
0.85
Forward transfer admittance
Y
f s
V
DS
=
10 V, I
D
=
4 A
3.0
6.5
S
Input capacitance
C
iss
1050
Reverse transfer capacitance
C
rss
10
Output capacitance
C
oss
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
110
pF
Rise time
t
r
26
Turn-on time
t
on
45
Fall time
t
f
38
Switching time
Turn-off time
t
off
130
ns
Total gate charge
Q
g
28
Gate-source charge
Q
gs
16
Gate-drain charge
Q
gd
V
DD
-
400 V, V
GS
=
10 V, I
D
= 8
A
12
nC
Source-Drain Ratings and Characteristics
(Ta
=
25C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
I
DR
8
A
Pulse drain reverse current
(Note 1)
I
DRP
32
A
Forward voltage (diode)
V
DSF
I
DR
=
8 A, V
GS
=
0 V
-
1.7
V
Reverse recovery time
t
rr
1200
ns
Reverse recovery charge
Q
rr
I
DR
=
8 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/
s
10
C
Marking
R
L
=
50
0 V
10
V
V
GS
V
DD
-
200 V
I
D
=
4
A
V
OUT
50
Duty
<
=
1%, t
w
=
10
s
TYPE
K3759
Lot Number
Date
Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
2SK3759
2004-02-26
5
CHANNEL TEMPERATURE (INITIAL)
T
ch
(C)
E
AS
T
ch
AVALANCHE ENERGY
E
AS
(mJ)
r
th
t
w
PULSE WIDTH t
w
(s)
0.1
10
1
10
100
1
10
100
1
10
T
PDM
t
Duty
=
t/T
Rth (ch-c)
=
1.68C/W
Duty=0.5
0.2
0.1
0.05
0.02
0.01
0.01
NORMALIZED TRANSIENT THERMAL
IMPEDANCE r
th (t)
/R
th (ch
-
c)
SINGLE PULSE
-
15
V
15
V
TEST CIRCUIT
WAVE FORM
I
AR
B
VDSS
V
DD
V
DS
R
G
=
25
V
DD
=
90 V, L
=
1.28 mH
-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
60
50
20
10
0
25
50
75
100
125
150
0.01
1
0.1
1
10
100
10
1000
100
100
s
*
1 ms
*
VDSS max
DRAIN-SOURCE VOLTAGE V
DS
(V)
SAFE OPERATING AREA
SINGLE NONREPETITIVE PULSE
Tc=25
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE
.
ID max (PULSED)
*
ID max (CONTINUOUS)
*
DRAIN CURRENT I
D
(A)
DC OPERATION
Tc
=
25C
40
30
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