2SK3762
2004-02-26
1
10.5 max
3.840.2
6.6 max.
2.7
15.6 max.
13.4 min.
1.5 max
0.81 max
2.54
3.9
max.
4.7 max
1.3
0.45
2.7
1 2 3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS
)
2SK3762
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 5.6 (typ.)
High forward transfer admittance: |Y
fs
| = 2.0 S (typ.)
Low leakage current: I
DSS
= 100 A (V
DS
= 720 V)
Enhancement-mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
900
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
900
V
Gate-source voltage
V
GSS
30
V
DC
(Note 1)
I
D
2.5
Drain current
Pulse (t
=
1 ms)
(Note 1)
I
DP
7.5
A
Drain power dissipation (Tc
=
25C)
P
D
62
W
Single pulse avalanche energy
(Note 2)
E
AS
21.6
mJ
Avalanche current
I
AR
2.5
A
Repetitive avalanche energy (Note 3)
E
AR
6.2
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150
C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
2.02
C/W
Thermal resistance, channel to ambient
R
th (ch-a)
83.3
C/W
Note 1: Please use devices on conditions that the channel temperature is below 150C.
Note 2: V
DD
=
90 V, T
ch
=
25C, L
=
6.3 mH, I
AR
=
2.5 A, R
G
=
25
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
unit
1
3
2
Weight : 2.0g(typ.)
JEDEC
JEITA
TOSHIBA
TO-220AB
SC-46
1. Gate
2. Drain(HEAT SINK)
3. Source
1.5 max
2.54
3.9 max
13.4 min
15.6 max
3.840.2
10.5 max
6.6 max
4.7 max
1.3
0.45
2.7
0.81
2SK3762
2004-02-26
2
Electrical Characteristics
(Ta
=
25C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
30 V, V
DS
=
0 V
10
A
Gate-source breakdown voltage
V
(BR) GSS
I
D
=
10
A, V
GS
=
0 V
30
V
Drain cut-off current
I
DSS
V
DS
=
720 V, V
GS
=
0 V
100
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
900
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
1 mA
2.0
4.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
=
10 V, I
D
=
1.5 A
5.6
6.4
Forward transfer admittance
Y
f s
V
DS
=
20 V, I
D
=
1.5 A
1.0
2.0
S
Input capacitance
C
iss
470
Reverse transfer capacitance
C
rss
10
Output capacitance
C
oss
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
50
pF
Rise time
t
r
20
Turn-on time
t
on
60
Fall time
t
f
30
Switching time
Turn-off time
t
off
100
ns
Total gate charge
Q
g
12
Gate-source charge
Q
gs
7
Gate-drain charge
Q
gd
V
DD
-
400 V, V
GS
=
10 V, I
D
=2.5
A
5
nC
Source-Drain Ratings and Characteristics
(Ta
=
25C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
I
DR
2.5
A
Pulse drain reverse current
(Note 1)
I
DRP
7.5
A
Forward voltage (diode)
V
DSF
I
DR
=2.
5 A, V
GS
=
0 V
-
1.7
V
Reverse recovery time
t
rr
720
ns
Reverse recovery charge
Q
rr
I
DR
=
2.5 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/
s
3.6
C
Marking
R
L
=
133
0 V
10
V
V
GS
V
DD
-
200 V
I
D
=
1.5
A V
OUT
50
Duty
<
=
1%, t
w
=
10
s
TYPE
K3762
Lot Number
Date
Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
2SK3762
2004-02-26
3
DRAIN
-
SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
V
DS
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
V
DS
DRAIN CURREN
T I
D
(A)
GATE-SOURCE VOLTAGE V
GS
(V)
I
D
V
GS
GATE-SOURCE VOLTAGE V
GS
(V)
V
DS
V
GS
DRAIN CURRENT I
D
(A)
Y
f s
I
D
DRAIN CURRENT I
D
(A)
R
DS (ON)
I
D
DRAIN
-
SOURCE ON RESISTANCE
R
DS (ON)
(
)
2.5
2
1.5
1
0.5
0
3
0
12
24
36
VGS
=
4 V
4.75
5
5.25
8
10
5.5
6
4. 5
COMMON
SOURCE
Tc
=
25C
PULSE TEST
FORWARD TRANSFER ADMITTANCE
Y
fs
(S)
DRAIN CURRENT I
D
(A)
DRAI
N CURRENT I
D
(A)
2
1.6
0.8
0.4
0
0
4
8
12
16
20
VGS
=
4 V
4.75
5
5.25
5.5
6
8
10
24
1.2
4. 5
COMMON
SOURCE
Tc
=
25C
PULSE TEST
0
0
2
4
8
10
12
1
5
Tc
=
-
55C
25
100
2
3
4
6
COMMON SOURCE
VDS
=
20 V
PULSE TEST
0
20
30
40
0
ID
=
2.5 A
4
8
12
16
20
0.8
1.5
10
COMMON SOURCE
Tc
=
25
PULSE TEST
1 0 0
0.01
1
10
0.01
1
10
25
100
Tc
=
-
55C
0.1
0.1
COMMON SOURCE
VDS
=
20 V
PULSE TEST
1
0.01
0.1
1
10
10
100
VGS
=
10 V
COMMON SOURCE
Tc
=
25C
PULSE TEST
2SK3762
2004-02-26
4
0
100
200
300
400
500
0
4
8
1 2
1 6
2 0
0
10
20
VDD
=
100 V
VDS
VGS
400
200
30
40
0
1
2
3
5
-
80
-
40
0
40
80
120
160
4
DRAIN POWER DISSIPATION
P
D
(W)
GATE THRESHOLD VOLTAGE
V
th
(V)
CASE TEMPERATURE Tc (C)
R
DS (ON)
Tc
DRAIN
-
SO
URCE ON RESISTANCE R
DS (ON)
(
)
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
DR
V
DS
DRAIN REVERSE CURRENT I
DR
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE V
DS
CAPACITANCE C (pF)
CASE TEMPERATURE Tc (C)
V
th
Tc
80
40
0
0
40
80
120
20
60
160
CASE TEMPERATURE Tc (C)
P
D
Tc
GATE
-
SOURCE
VOLTAGE V
GS
(V)
TOTAL GATE CHARGE Q
g
(nC)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
DRAIN
-
SOURCE VOLTAGE V
DS
(V)
COMMON SOURCE
ID
=
5 A
Tc
=
25C
PULSE TEST
1
0.1
10
100
1000
1
3 5
10
30
50
100
Ciss
Coss
Crss
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25C
160
-
40
0
40
80
120
-
80
20
16
12
8
4
0
ID
=
1.5A
0.8
VGS
=
10 V
COMMON SOURCE
PULSE TEST
0
0.1
-
0.4
0.3
0.5
1
3
5
10
-
0.8
-
1.2
-
1.6
VGS
=
0V
10
3
1
COMMON SOURCE
Tc
=
25C
PULSE TEST
COMMON SOURCE
VDS
=
10 V
ID
=
1 mA
PULSE TEST
2SK3762
2004-02-26
5
CHANNEL TEMPERATURE (INITIAL)
T
ch
(C)
E
AS
T
ch
AVALANCHE ENERGY
E
AS
(mJ)
r
th
t
w
PULSE WIDTH t
w
(s)
0.1
10
1
10
100
1
10
100
1
10
T
PDM
t
Duty
=
t/T
Rth (ch-c)
=
2.02C/W
Duty=0.5
0.2
0.1
0.05
0.02
0.01
0.01
NORMALIZED TRANSIENT THERMAL
IMPEDANCE r
th (t)
/R
th (ch
-
c)
SINGLE PULSE
-
15
V
15
V
TEST CIRCUIT
WAVE FORM
I
AR
B
VDSS
V
DD
V
DS
R
G
=
25
V
DD
=
90 V, L
=
6.3 mH
-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
25
20
15
5
0
25
50
75
100
125
150
0.01
1
0.1
1
10
10
1000
100
100
s
*
1 ms
*
VDSS max
DRAIN-SOURCE VOLTAGE V
DS
(V)
SAFE OPERATING AREA
SINGLE NONREPETITIVE PULSE
Tc=25
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE
.
ID max (PULSED)
*
ID max (CONTINUOUS)
*
DRAIN CURRENT I
D
(A)
DC OPERATION
Tc
=
25C
10
2SK3762
2004-02-26
6
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments ,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
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