2SK3799
2005-01-24
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (
-MOSIV)
2SK3799
Switching Regulator Applications
Low drain-source ON resistance
: R
DS (ON)
= 1.0
(typ.)
High forward transfer admittance
: |Y
fs
| = 6.0 S (typ.)
Low leakage current : I
DSS
= 100A (max) (V
DS
= 720 V)
Enhancement model : V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta = 25C)
Characteristic Symbol
Rating
Unit
Drain-source voltage
V
DSS
900 V
Drain-gate voltage (R
GS
= 20 k) V
DGR
900
V
Gate-source voltage
V
GSS
30 V
DC (Note
1)
I
D
8
A
Drain current
Pulse (Note 1)
I
DP
24 A
Drain power dissipation
P
D
50
W
Single pulse avalanche energy
(Note
2)
E
AS
1080
mJ
Avalanche current
I
AR
8 A
Repetitive avalanche energy (Note 3)
E
AR
5
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150 C
Thermal Characteristics
Characteristic Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
2.5 C
/
W
Thermal resistance, channel to
ambient
R
th (ch-a)
62.5
C / W
Note 1: Ensure that the channel temperature does not exceed 150C during use of the device.
Note 2: V
DD
= 90 V, T
ch
= 25C (initial), L = 30.9 mH, R
G
= 25, I
AR
= 8 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
--
JEITA SC-67
TOSHIBA 2-10U1B
Weight: 1.7 g (typ.)
1. Gate
2. Drain
3. Source
1
3
2
2SK3799
2005-01-24
2
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3799
Part No. (or abbreviation code)
Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 30 V, V
DS
= 0 V
--
--
10
A
Drain-source breakdown voltage
V
(BR) GSS
I
G
= 10
A, V
GS
= 0 V
30
--
--
V
Drain cut-off current
I
DSS
V
DS
= 720 V, V
GS
= 0 V
--
--
100
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
450
--
--
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
2.0
--
4.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 4 A
--
1.0
1.3
Forward transfer admittance
|Y
fs
| V
DS
= 15 V, I
D
= 4 A
3.5
6.0
--
S
Input capacitance
C
iss
--
2200
--
Reverse transfer capacitance
C
rss
--
45
--
Output capacitance
C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
-- 190 --
pF
Rise time
t
r
--
25
--
Turn-on time
t
on
--
65
--
Fall time
t
f
--
20
--
Switching time
Turn-off time
t
off
Duty 1%, t
w
= 10 s
-- 120 --
ns
Total gate charge (Gate-source
plus gate-drain)
Q
g
--
60
--
Gate-source charge
Q
gs
--
34
--
Gate-drain ("miller") charge
Q
gd
V
DD
400 V, V
GS
= 10 V, I
D
= 8 A
-- 26 --
nC
Source-Drain Ratings and Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note
1)
I
DR
--
--
--
8
A
Pulse drain reverse current
(Note
1)
I
DRP
--
--
--
24
A
Forward voltage (diode)
V
DSF
I
DR
= 8 A, V
GS
= 0 V
--
--
-1.7 V
Reverse recovery time
t
rr
--
1700
--
ns
Reverse recovery charge
Qrr
I
DR
= 8 A, V
GS
= 0 V
dl
DR
/ dt = 100 A / S
-- 23 --
C
Marking
0 V
10
V
V
GS
R
L
=
100
V
DD
400 V
I
D
= 4
A
Output
4.
7
2SK3799
2005-01-24
3
F
O
R
W
AR
D
TR
AN
SFE
R
AD
MI
TT
AN
CE
Y
fs
(
S
)
DR
A
I
N
-
SO
U
R
C
E
VO
L
T
AG
E
V
DS
(V
)
DRAIN-SOURCE VOLTAGE VDS (V)
I
D
V
DS
DR
A
I
N
CU
RR
EN
T
I
D
(
A
)
DRAIN-SOURCE VOLTAGE VDS (V)
I
D
V
DS
DR
A
I
N
CU
RR
EN
T
I
D
(
A
)
GATE-SOURCE VOLTAGE VGS (V)
I
D
V
GS
DR
A
I
N
CU
RR
EN
T
I
D
(
A
)
GATE-SOURCE VOLTAGE VGS (V)
V
DS
V
GS
DRAIN CURRENT ID (A)
Y
fs
- I
D
DRAIN CURRENT ID (A)
R
DS (ON)
- I
D
DR
A
I
N
-
SOUR
CE
O
N
RE
S
I
S
T
AN
C
E
R
DS (ON)
(
)
0
10
2
6
4
8
2
0
10
4 6 8
COMMON SOURCE
Tc
= 25C
PULSE TEST
VGS = 4.5 V
5
5.25
4.75
1
10
1
10
0.1
COMMON SOURCE
Tc
= 25C
PULSE TEST
VGS = 10 V
100
0
20
4
12
8
16
4
0
20
8
12 16
COMMON SOURCE
VDS = 20 V
PULSE TEST
0
20
4
12
8
16
2
0
10
4 6 8
Tc
= -55C
25
100
0
20
4
12
8
16
0
4
20
8
12 16
2
4
ID = 8 A
25
0.1 100
10
Tc
= -55C
100
1
100
10
6
5.5
10
15
10
15
6
5.5
5
VGS = 4.5 V
1
COMMON SOURCE
Tc
= 25C
PULSE TEST
COMMON SOURCE
Tc
= 25C
PULSE TEST
COMMON SOURCE
VDS = 20 V
PULSE TEST
2SK3799
2005-01-24
4
DR
AI
N PO
W
E
R DI
SS
IP
A
T
IO
N
P
D
(W
)
CASE TEMPERATURE Tc (C)
P
D
Tc
80
40
0
0 40 80 120
160
20
60
CASE TEMPERATURE Tc (C)
G
A
TE
TH
RE
SHO
L
D
V
O
L
T
A
G
E
V
th
(V
)
CASE TEMPERATURE Tc (C)
R
DS (ON)
- Tc
DR
AI
N
-
S
O
U
R
C
E
O
N
RE
SI
ST
AN
CE
R
DS
(
O
N)
(
)
DRAIN-SOURCE VOLTAGE VDS (V)
I
DR
- V
DS
D
R
AI
N
RE
VE
RSE
CU
RR
EN
T
I DR
(
A
)
DRAIN-SOURCE VOLTAGE VDS (V)
C
- V
DS
CA
P
A
C
I
T
A
NC
E
C
(pF
)
V
th
- Tc
0.1
100
-0.4
0
-1.6
-0.8
-1.2
10
10
3
1
VGS = 0 V
COMMON SOURCE
Tc
= 25C
PULSE TEST
0
5
1
3
2
4
-40
-80
160
0 40 80
COMMON SOURCE
VGS = 10 V
PULSE TEST
2
4
5
1
3
2
4
0
-80
0
40
80
120
160
-40
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
10000
10
1
0.1 100
10
1
120
5
ID = 8 A
1
1000
100
GA
T
E
-
SO
UR
CE
VO
L
T
AG
E V
GS
(V)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
TOTAL GATE CHARGE Qg (nC)
DR
A
I
N
-
SOUR
CE
VO
L
T
A
G
E
V
DS
(V)
500
100
300
400
0
0
20
4
12
16
0
VDS = 400 V
100
VGS
VDS
COMMON SOURCE
ID = 8 A
Tc
= 25C
PULSE TEST
40
60
80
100
20
200
200
8
Ciss
Coss
Crss
COMMON SOURCE
VGS = 0 V
f
= 1 MHz
Tc
= 25C
2SK3799
2005-01-24
5
r
th
t
w
PULSE WIDTH tw (s)
N
O
R
M
ALIZ
E
D
T
R
AN
S
I
EN
T
T
H
E
R
M
A
L
I
M
PED
AN
CE
r th (t)
/R
th
(c
h
-
c
)
0.01
10
0.1
1
10
100
1
10
100
1
10
0.001
Duty=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
T
PDM
t
Duty
= t/T
Rth (ch-c) = 2.5C/W
-15 V
15
V
TEST CIRCUIT
WAVE FORM
I
AR
B
VDSS
V
DD
V
DS
R
G
= 25
V
DD
= 90 V, L = 30.9 mH
-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
AS
SAFE OPERATING AREA
E
AS
T
ch
DRAIN-SOURCE VOLTAGE VDS (V)
CHANNEL TEMPERATURE (INITIAL) Tch (C)
A
V
AL
AN
CH
E E
N
E
R
GY
E
AS
(mJ
)
DR
AI
N C
U
R
R
E
N
T
I D
(A
)
1
100
10 100
10000
VDSS max
10
0.1
DC OPERATION
Tc
= 25C
1 ms *
ID max (CONTINUOUS)
ID max (PULSE) *
25
50
75
100 125 150
0.01
100 s *
1
1000
* SINGLE NONPETITIVE PULSE
Tc
= 25C
Curves must be derated linearly
with increase in temperature.
0
400
800
1200
2000
1600
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