2SK3934
2004-12-03
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
-MOSVI)
2SK3934
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 0.23 (typ.)
High forward transfer admittance: |Y
fs
| =8.2 S (typ.)
Low leakage current: I
DSS
= 100 A (V
DS
= 500 V)
Enhancement-mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
500
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
500
V
Gate-source voltage
V
GSS
30
V
DC
(Note 1)
I
D
15
Drain current
Pulse (t
=
1 ms)
(Note 1)
I
DP
60
A
Drain power dissipation (Tc
=
25C)
P
D
50
W
Single pulse avalanche energy
(Note 2)
E
AS
1.08
J
Avalanche current
I
AR
15
A
Repetitive avalanche energy (Note 3)
E
AR
5.0
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150
C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
2.5
C/W
Thermal resistance, channel to ambient
R
th (ch-a)
62.5
C/W
Note 1: Please use devices on conditions that the channel temperature is below 150C.
Note 2: V
DD
=
90 V, T
ch
=
25C(initial), L
=
8.16mH, I
AR
=
15 A, R
G
=
25
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
?
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
1
3
2
2SK3934
2004-12-03
2
Electrical Characteristics
(Ta
=
25C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
25 V, V
DS
=
0 V
10
A
Gate-source breakdown voltage
V
(BR) GSS
I
G
=
10
A, V
DS
=
0 V
30
V
Drain cut-off current
I
DSS
V
DS
=
500 V, V
GS
=
0 V
100
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
500
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
1 mA
2.0
4.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
=
10 V, I
D
=
7.5 A
0.23
0.3
Forward transfer admittance
Y
f s
V
DS
=
10 V, I
D
=
7.5 A
2.3
8.2
S
Input capacitance
C
iss
3100
Reverse transfer capacitance
C
rss
20
Output capacitance
C
oss
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
270
pF
Rise time
t
r
70
Turn-on time
t
on
130
Fall time
t
f
70
Switching time
Turn-off time
t
off
280
ns
Total gate charge
Q
g
62
Gate-source charge
Q
gs
40
Gate-drain charge
Q
gd
V
DD
-
400 V, V
GS
=
10 V, I
D
=
15A
22
nC
Source-Drain Ratings and Characteristics
(Ta
=
25C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
I
DR
15
A
Pulse drain reverse current
(Note 1)
I
DRP
60
A
Forward voltage (diode)
V
DSF
I
DR
=
15A, V
GS
=
0 V
-
1.7
V
Reverse recovery time
t
rr
1.3
s
Reverse recovery charge
Q
rr
I
DR
=
15A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/
s
18
C
Marking
R
L
=
26
0 V
10
V
V
GS
V
DD
-
200 V
I
D
=
7.5
A V
OUT
50
Duty
<
=
1%, t
w
=
10
s
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3934
Part No. (or abbreviation code)
2SK3934
2004-12-03
3
DRAIN CURRENT I
D
(A)
R
DS (ON)
I
D
DRAIN
-
SOURCE ON RESISTANCE
R
DS (ON)
(m
)
DRAIN
-
SOURCE VOLTAGE V
DS
(V)
I
D
V
DS
DRAIN CURRENT I
D
(A)
20
8
0
16
4
DRAIN
-
SOURCE VOLTAGE V
DS
(V)
I
D
V
DS
DRAIN CURRENT I
D
(A)
GATE
-
SOURCE VOLTAGE V
GS
(V)
I
D
V
GS
DRAIN CURRENT I
D
(A)
0
0
2
4
6
8
10
20
50
10V
30
40
10
GATE
-
SOURCE VOLTAGE V
GS
(V)
V
DS
V
GS
0
6
8
10
0
4
8
12
16
20
12
4
2
DRAIN CURRENT I
D
(A)
Y
f s
I
D
FORWARD TRANSIENT ADMITTANCE
Y
fs
(S)
10
1
10
100
100
1000
0.1
10
100
0.1
100
10
0
2
4
8
COMMON SOURCE
Tc
=
25C
PULSE TEST
10
40
30
20
10
0
50
0
8
20
COMMON SOURCE
Tc
=
25C
PULSE TEST
6.2V
7V
6.6V
16
12
4
VGS
=
5V
8V
6.4V
5.8V
5.4V
6V
7V
7.5V
8V
6.5V
COMMON SOURCE
Tc
=
25
PULSE TEST
ID
=
15 A
ID
=
7.5 A
ID
=
3.8 A
VGS
=
10 V
COMMON SOURCE
Tc
=
25C
PULSE TEST
Tc
=
-
55C
100
25
6
DRAIN
-
SOURCE VOLTAGE V
DS
(V)
COMMON SOURCE
VDS
=
20 V
PULSE TEST
Tc
=
25C
Tc
=
100C
Tc
=
-
55C
6V
6.8V
10V
VGS
=
5 V
COMMON SOURCE
VDS
=
20 V
PULSE TEST
1
1
2SK3934
2004-12-03
4
DRAIN
-
SOURCE VOLTAGE V
DS
(V)
C V
DS
CAPACITANCE C (pF)
10
0.1
100
1000
10000
1
10
100
CASE TEMPERATURE Tc (C)
R
DS (ON)
Tc
DRAIN
-
SOURCE ON RESISTANCE
R
DS (ON)
(m
)
160
-
40
0
40
80
120
-
80
1000
800
600
400
200
0
TOTAL GATE CHARGE Q
g
(nC)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
DRAIN
-
SOURCE VOLTAGE V
DS
(V)
GATE THRESHOLD VOLTAGE
V
th
(V)
CASE TEMPERATURE Tc (C)
V
th
Tc
0
1
2
3
5
-
80
-
40
0
40
80
120
160
4
DRAIN POWER DISSIPATION P
D
(W)
CASE TEMPERATURE Tc (C)
P
D
Tc
80
40
0
0
40
80
120
160
20
60
DRAIN
-
SOURCE VOLTAGE V
DS
(V)
I
DR
V
DS
DRAIN REVERSE CURRENT I
DR
(A)
0
0.1
1
10
100
-
0.8
-
1.2
-
1.6
-
0.4
0
60
80
100
500
400
0
40
20
8
4
16
20
0
COMMON SOURCE
VGS
=
10 V
PULSE TEST
ID
=
15A
7.5
3.8
COMMON SOURCE
VDS
=
10 V
ID
=
1 mA
PULSE TEST
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25C
Ciss
Coss
Crss
COMMON SOURCE
Tc
=
25C
PULSE TEST
5
3
1
VGS
=
0 V
10
GATE
-
SOURCE VOLTAGE V
GS
(V)
VDS
VGS
VDD
=
100 V
200V
400V
COMMON SOURCE
ID
=
15 A
Tc
=
25C
PULSE TEST
12
300
200
100
2SK3934
2004-12-03
5
-
15
V
15
V
TEST CIRCUIT
WAVE FORM
I
AR
B
VDSS
V
DD
V
DS
R
G
=
25
V
DD
=
90 V, L
=
8.13 mH
-
=
VDD
BVDSS
BVDSS
2
I
L
2
1
? AS
CHANNEL TEMPERATURE (INITIAL)
T
ch
(C)
E
AS
T
ch
AVALANCHE ENERGY E
AS
(mJ)
1200
1000
800
600
200
0
25
50
75
100
125
150
r
th
t
w
PULSE WIDTH t
w
(s)
NORMALIZED TRANSIENT THERMAL
IMPEDANCE r
th (t)
/R
th (ch
-
c)
0.01
10
0.1
1
10
100
1
10
100
1
10
0.001
DRAIN
-
SOURCE VOLTAGE V
DS
(V)
SAFE OPERATING AREA
DRAIN CURRENT I
D
(A)
0.1
1
1
10
100
10
1000
100
0.01
Duty=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
*
SINGLE NONREPETITIVE PULSE
Tc
=
25C
CURVES MUST BE DERATED
LINEALY WITH INCREASE IN
TEMPERATURE
DC OPERATION
Tc
=
25C
1 ms
*
V
DSS
max
ID max (CONTINUOUS)
*
ID max (PULSED)
*
100
s
*
T
PDM
t
Duty
=
t/T
Rth (ch-c)
=
2.5C/W
400
2SK3934
2004-12-03
6
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
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