GT15Q102
2002-01-18
1
TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT15Q102
High Power Switching Applications
The 3rd Generation
Enhancement-Mode
High Speed: t
f
= 0.32 s (max)
Low Saturation Voltage: V
CE (sat)
= 2.7 V (max)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristic Symbol
Rating
Unit
Collector-emitter voltage
V
CES
1200 V
Gate-emitter voltage
V
GES
20 V
DC I
C
15
Collector current
1 ms
I
CP
30
A
Collector power dissipation
(Tc
= 25C)
P
C
170
W
Junction temperature
T
j
150 C
Storage temperature range
T
stg
-55~150 C
Unit: mm
JEDEC
JEITA
TOSHIBA 2-16C1C
Weight: 4.6 g
GT15Q102
2002-01-18
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristic Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GES
V
GE
= 20 V, V
CE
= 0
500
nA
Collector cut-off current
I
CES
V
CE
= 1200 V, V
GE
= 0
1.0 mA
Gate-emitter cut-off voltage
V
GE (OFF)
I
C
= 1.5 mA, V
CE
= 5 V
4.0
7.0 V
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 15 A, V
GE
= 15 V
2.1 2.7 V
Input capacitance
C
ies
V
CE
= 50 V, V
GE
= 0, f = 1 MHz
850
pF
Rise time
t
r
0.05
Turn-on time
t
on
0.12
Fall time
t
f
0.16 0.32
Switching time
Turn-off time
t
off
Inductive Load
V
CC
= 600 V, I
C
= 15 A
V
GG
= 15 V, R
G
= 56 W
(Note1)
0.56
ms
Thermal resistance
R
th (j-c)
0.74
C/W
Note1: Switching time measurement circuit and input/output waveforms
Note2: Switching loss measurement waveforms
GT15Q301
R
G
I
C
V
CE
L V
CC
-V
GE
10%
90%
V
GE
V
CE
I
C
t
d (off)
t
off
t
d (on)
t
r
t
on
0
0
t
f
10%
10%
10%
90%
10%
90%
10%
90%
V
GE
V
CE
I
C
E
off
E
on
0
0
10%
GT15Q102
2002-01-18
3
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Collector-emitter voltage V
CE
(V)
I
C
V
CE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Gate-emitter voltage V
GE
(V)
I
C
V
GE
Case temperature Tc (C)
V
CE (sat)
Tc
C
o
l
l
e
ct
or
-e
mi
tte
r s
a
tu
rati
on
vol
t
ag
e
V
CE (sat)
(V
)
20
16
12
8
4
0
0 4 8 12 16
20
Common emitter
Tc
= 25C
30
15
IC = 6 A
4
3
2
1
0
-60
-20 20 60 100 140
Common emitter
VGE = 15 V
15
30
IC = 6 A
50
40
30
20
10
0
0 1 2 3 4
5
VGE = 9 V
Common emitter
Tc
= 25C
10
20
15
0 4 8 12 16
20
12
0
4
8
16
20
Common emitter
Tc
= -40C
30
15
IC = 6 A
0 4 8 12 16
20
12
0
4
8
16
20
Common emitter
Tc
= 125C
15
30
IC = 6 A
50
40
30
20
10
0
0 4 8 12 16
20
Tc
= 125C
Common emitter
VCE = 5 V
25
-40
GT15Q102
2002-01-18
4
Switch
in
g
lo
s
s
E
on
, E
of
f
(
m
J
)
Switch
in
g
ti
m
e
t
of
f
, t
f
(
m
s)
Gate resistance R
G
(
9)
Switching time t
on
, t
r
R
G
Switch
in
g
ti
m
e
t
on
, t
r
(
m
s)
Collector current I
C
(A)
Switching time t
on
, t
r
I
C
Switch
in
g
ti
m
e
t
on
, t
r
(
m
s)
Gate resistance R
G
(
9)
Switching time t
off
, t
f
R
G
Switch
in
g
ti
m
e
t
of
f
, t
f
(
m
s)
Collector current I
C
(A)
Switching time t
off
, t
f
I
C
Gate resistance R
G
(
9)
Switching loss E
on
, E
off
R
G
Collector current I
C
(A)
Switching loss E
on
, E
off
I
C
Switch
in
g
lo
s
s
E
on
, E
of
f
(
m
J
)
1
0.5
0.3
0.03
3 5 10
30
50
0.05
0.1
0.01
100 300
500
tr
ton
Common emitter
VCC = 600 V
VGG = 15 V
IC = 15 A
:
Tc
= 25C
:
Tc
= 125C
10
5
3
0.3
3 5 10
30
50
0.5
1
0.1
100 300
500
Eoff
Eon
Common emitter
VCC = 600 V
VGG = 15 V
IC = 15 A
:
Tc
= 25C
:
Tc
= 125C
Note2
5
0
0.3
0.1
0.01
0.03
1
10 15 20
Common emitter
VCC = 600 V
VGG = 15 V
RG = 56 W
:
Tc
= 25C
:
Tc
= 125C
tr
ton
0.5
0.05
0.3
0.1
3
1
0.05
Common emitter
VCC = 600 V
VGG = 15 V
RG = 56 W
:
Tc
= 25C
:
Tc
= 125C
tf
toff
5
0
10 15 20
0.5
0.3
0.5
1
3
0.1
tf
toff
5 10
30
50 100
3
0.05
300
Common emitter
VCC = 600 V
VGG = 15 V
IC = 15 A
:
Tc
= 25C
:
Tc
= 125C
0.3
0.1
1
3
10
Common emitter
VCC = 600 V
VGG = 15 V
RG = 56 W
:
Tc
= 25C
:
Tc
= 125C
Note2
Eoff
Eon
5
0
10 15 20
0.5
5
GT15Q102
2002-01-18
5
T
r
a
n
si
e
n
t t
h
e
r
m
a
l
i
m
pe
da
nce
R
th (t)
(
C
/
W
)
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Collector-emitter voltage V
CE
(V)
C V
CE
C
apaci
t
anc
e C
(p
F)
Gate
-e
mitt
er
voltag
e V
GE
(V
)
Gate charge Q
G
(nC)
V
CE
, V
GE
Q
G
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Collector-emitter voltage V
CE
(V)
Safe operating area
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Collector-emitter voltage V
CE
(V)
Reverse bias SOA
Pulse width t
w
(s)
R
th (t)
t
w
0.3
1 3 10
0.5
1
3
5
10
30
30 100
300
3000
1000
0.1
100
50
*: Single
nonrepetitive pulse
Tc
= 25C
Curves must be
derated linearly with
increase in
temperature.
IC max (pulsed)*
IC max (continuous)
DC
operation
1 ms*
100
ms*
50
ms*
10 ms*
30
100
3000
300
1000
Common emitter
VGE = 0
f
= 1 MHz
Tc
= 25C
Cies
Coes
Cres
1 3 10
10
30 100 300 1000
Common emitter
RL = 40 W
Tc
= 25C
0
0
40 80 120
160 200
0
4
8
12
16
20
200
400
600
800
1000
VCE = 200 V
600
400
0.3
1 3 10
0.5
1
3
5
10
30
30 100
300
3000
1000
0.1
50
Tj <= 125C
VGE = 15 V
RG = 56 W
10-
3
10
2
10-
5
10-
4
10-
3
10-
2
10-
1
10
0
10
1
10
2
10-
2
10-
1
10
0
10
1
10-
4
Tc
= 25C
10
3
GT15Q102
2002-01-18
6
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
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extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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