GT20J321
2002-04-08
1
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
GT20J321
High Power Switching Applications
Fast Switching Applications
The 4th generation
Enhancement-mode
Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: t
f
= 0.04 s (typ.)
Low switching loss : E
on
= 0.40 mJ (typ.)
:
E
off
= 0.43 mJ (typ.)
Low saturation voltage: V
CE (sat)
= 2.0 V (typ.)
FRD included between emitter and collector
Maximum Ratings
(Ta = 25C)
Characteristics Symbol
Rating
Unit
Collector-emitter voltage
V
CES
600 V
Gate-emitter voltage
V
GES
20 V
DC I
C
20
Collector current
1 ms
I
CP
40
A
DC I
F
20
Emitter-collector forward
current
1 ms
I
FM
40
A
Collector power dissipation
(Tc = 25C)
P
C
45
W
Junction temperature
T
j
150 C
Storage temperature range
T
stg
-55 to 150
C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance (IGBT)
R
th (j-c)
2.78 C/W
Thermal resistance (diode)
R
th (j-c)
4.23 C/W
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA 2-10R1C
Weight: 1.7 g (typ.)
Gate
Emitter
Collector
GT20J321
2002-04-08
2
Electrical Characteristics
(Ta = 25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GES
V
GE
= 20 V, V
CE
= 0
500 nA
Collector cut-off current
I
CES
V
CE
= 600 V, V
GE
= 0
1.0 mA
Gate-emitter cut-off voltage
V
GE (OFF)
I
C
= 2 mA, V
CE
= 5 V
3.5
6.5 V
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 20 A, V
GE
= 15 V
2.0 2.45 V
Input capacitance
C
ies
V
CE
= 10 V, V
GE
= 0, f = 1 MHz
3000
pF
Turn-on delay time
t
d (on)
0.06
Rise time
t
r
0.04
Turn-on time
t
on
0.17
Turn-off delay time
t
d (off)
0.24
Fall time
t
f
0.04
Switching time
Turn-off time
t
off
0.34
s
Turn-on switching
loss
E
on
0.40
Switching loss
Turn-off switching
loss
E
off
Inductive Load
V
CC
= 300 V, I
C
= 20 A
V
GG
= +15 V, R
G
= 33
(Note 1)
(Note 2)
0.43
mJ
Peak forward voltage
V
F
I
F
= 20 A, V
GE
= 0
2.1 V
Reverse recovery time
t
rr
I
F
= 20 A, di/dt = -100 A/s
100 ns
Note 1: Switching time measurement circuit and input/output waveforms
Note 2: Switching loss measurement waveforms
10%
90%
V
GE
V
CE
I
C
E
off
E
on
0
0
5%
R
G
I
C
V
CE
L
V
CC
-V
GE
10%
90%
V
GE
V
CE
I
C
t
d (off)
t
off
t
d (on)
t
r
t
on
0
0
t
f
10%
10%
10%
90%
10%
90%
GT20J321
2002-04-08
3
Collector-emitter voltage V
CE
(V)
I
C
V
CE
Co
lle
ct
o
r
cu
r
r
e
n
t
I
C
(A
)
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lta
g
e
V
CE
(V
)
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lta
g
e
V
CE
(V
)
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lta
g
e
V
CE
(V
)
Gate-emitter voltage V
GE
(V)
I
C
V
GE
Co
lle
ct
o
r
cu
r
r
e
n
t
I
C
(A
)
Case temperature Tc (C)
V
CE (sat)
Tc
C
o
l
l
e
ct
or
-em
i
tte
r s
a
tu
rati
on
vol
t
age
V
CE (sat)
(V
)
-60
-20
20
60
100
140
20
10
IC = 5 A
40
0
1
2
3
4
5
Common
emitter
VGE = 15 V
30
0
4
8
12
16
20
Common
emitter
Tc = 25C
0
4
8
12
16
20
10
20
IC = 5 A
40
0
4
8
12
16
20
Common
emitter
Tc = 125C
0
4
8
12
16
20
10
20
IC = 5 A
40
0
4
8
12
16
20
Common
emitter
Tc = -40C
10
20
IC = 5 A
40
0
4
8
12
16
20
0
1
2
3
4
5
9
8
VGE = 7 V
15
0
10
20
30
40
Common
emitter
Tc = 25C
20
0
4
8
12
16
20
-40
25
Tc = 125C
0
10
20
30
40
Common
emitter
VCE = 5 V
GT20J321
2002-04-08
4
Collector current I
C
(A)
Sw
itc
h
in
g
lo
s
s
E
on
, E
of
f
(
m
J
)
Sw
itc
h
in
g
tim
e
t
of
f
, t
f
, t
d (
o
f
f
)
(
s
)
Switching time t
on
, t
r
, t
d (on)
R
G
Sw
itc
h
in
g
tim
e
t
on
, t
r
, t
d (o
n)
(
s
)
Switching time t
on
, t
r
, t
d (on)
I
C
Sw
itc
h
in
g
tim
e
t
on
, t
r
, t
d (o
n)
(
s
)
Switching time t
off
, t
f
, t
d (off)
R
G
Sw
itc
h
in
g
tim
e
t
of
f
, t
f
, t
d (
o
f
f
)
(
s
)
Collector current I
C
(A)
Switching time t
off
, t
f
, t
d (off)
I
C
Switching loss E
on
, E
off
R
G
Collector current I
C
(A)
Switching loss E
on
, E
off
I
C
Sw
itc
h
in
g
lo
s
s
E
on
, E
of
f
(
m
J
)
Gate resistance R
G
()
Gate resistance R
G
()
Gate resistance R
G
()
Common emitter
VCC = 300 V
VGG = 15 V
RG = 33
: Tc = 25C
: Tc = 125C
(Note 1)
4
0
1
0.3
0.01
0.03
3
8 12 16 20
tr
ton
0.1
td (off)
Common emitter
VCC = 300 V
VGG = 15 V
IC = 20 A
: Tc = 25C
: Tc = 125C
(Note 2)
1 10
30
100
300
1000
3
10
3
1
0.1
0.3
Eoff
Eon
3
1
0.1
0.3
10
0.01
1
10 30 100
300 1000
3
0.03
toff
tf
Common emitter
VCC = 300 V
VGG = 15 V
IC = 20 A
: Tc = 25C
: Tc = 125C
(Note 1)
td (off)
4
0
1
0.3
0.01
0.03
10
8 12 16 20
0.1
3
Common emitter
VCC = 300 V
VGG = 15 V
RG = 33
: Tc = 25C
: Tc = 125C
(Note 1)
tf
toff
td (off)
4
0
0.03
10
8 12 16 20
1
0.1
Eoff
Eon
Common emitter
VCC = 300 V
VGG = 15 V
IC = 20 A
: Tc = 25C
: Tc = 125C
(Note 2)
0.3
3
Common emitter
VCC = 300 V
VGG = 15 V
IC = 20 A
: Tc = 25C
: Tc = 125C
(Note 1)
3
1
0.3
0.1
0.01
1
10 30 100
300 1000
3
0.03
ton
td (on)
tr
GT20J321
2002-04-08
5
Co
lle
ct
o
r
cu
r
r
e
n
t
I
C
(A
)
Reve
r
s
e r
e
c
o
ve
r
y
c
u
r
r
e
n
t
I
rr
(A
)
Collector-emitter voltage V
CE
(V)
C V
CE
C
apa
ci
ta
nce
C
(
p
F)
Gate
-em
i
tt
er
volt
age
V
GE
(V
)
Gate charge Q
G
(nC)
V
CE
, V
GE
Q
G
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lta
g
e
V
CE
(V
)
Forward voltage V
F
(V)
I
F
V
F
Fo
r
w
ar
d c
u
r
r
en
t
I
F
(A
)
Reve
r
s
e
r
e
c
o
ve
r
y
tim
e
t
rr
(ns
)
Forward current I
F
(A)
t
rr
, I
rr
I
F
Collector-emitter voltage V
CE
(V)
Safe Operating Area
Collector-emitter voltage V
CE
(V)
Reverse Bias SOA
Co
lle
ct
o
r
cu
r
r
e
n
t
I
C
(A
)
-40
Tc = 125C
25
Common
collector
VGE = 0
0
0
40
10
20
30
0.5 1 1.5 2
3
2.5
300
VCE = 100 V 200
500
0
0
Common
emitter
RL = 15
Tc = 25C
4
8
16
20
12
100
200
300
400
40 60
100
140
120
80
20
0
Common collector
di/dt = -100 A/s
VGE = 0
: Tc = 25C
: Tc = 125C
1000
100
300
30
Irr
trr
100
1
0
10
10
30
3
5 10
20
15
Tj 125C
VGE = 15 V
RG = 33
0.1
1
100
1
10
30
3
0.3
3 10
30
300
100 1000
3
1
Common emitter
VGE = 0
f = 1 MHz
Tc = 25C
Cres
Coes
Cies
10000
10
100
300
1000
30
3000
10 100
300
1000
30
3
*: Single pulse
Tc = 25C
Curves must be
derated linearly
with increase in
temperature.
100 s*
50 s*
1 ms*
10 ms*
DC
operation
IC max
(continuous)
IC max (pulse)*
1
10
30
3
0.3
3 10
30
300
100
0.1
1
100
1000
GT20J321
2002-04-08
6
Pulse width t
w
(s)
r
th
(t) t
w
T
r
ansi
e
nt t
h
e
r
m
a
l
r
e
si
st
anc
e
r
th
(t
)
(
C
/
W
)
10
-5
10
-4
10
-2
10
-1
10
2
IGBT
FRD
10
-4
10
-3
10
-2
10
-1
10
1
10
2
Tc = 25C
10
0
10
-3
10
0
10
1
GT20J321
2002-04-08
7
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RESTRICTIONS ON PRODUCT USE
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