GT60M323
2004-07-06
1
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60M323
Voltage Resonance Inverter Switching Application
Enhancement mode type
High speed
: t
f
= 0.09 s (typ.) (I
C
= 60 A)
Low saturation voltage : V
CE (sat)
= 2.3 V (typ.) (I
C
= 60 A)
FRD included between emitter and collector
TO-3P(LH) (Toshiba package name)
Maximum Ratings
(Ta
=
25C)
Characteristics Symbol
Rating
Unit
Collector-emitter voltage
V
CES
900 V
Gate-emitter voltage
V
GES
25 V
@ Tc
= 100C
31
Continuous collector
current
@ Tc
= 25C
I
C
60
A
Pulsed collector current
I
CP
120 A
DC I
F
15
Diode forward current
Pulsed I
FP
120
A
@ Tc
= 100C
80
Collector power
dissipation
@ Tc
= 25C
P
C
200
W
Junction temperature
T
j
150 C
Storage temperature range
T
stg
-55 to 150
C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance (IGBT)
R
th (j-c)
0.625 C/W
Thermal resistance (diode)
R
th (j-c)
4.0 C/W
Equivalent Circuit
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA 2-21F2C
Weight: 9.75 g (typ.)
Gate
Emitter
Collector
GT60M323
TOSHIBA
JAPAN
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
GT60M323
2004-07-06
2
Electrical Characteristics
(Ta
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GES
V
GE
= 25 V, V
CE
= 0
500 nA
Collector cut-off current
I
CES
V
CE
= 900 V, V
GE
= 0
0.1 mA
Gate-emitter cut-off voltage
V
GE (OFF)
I
C
= 60 mA, V
CE
= 5 V
4.0
7.0 V
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 60 A, V
GE
= 15 V
2.3 2.8 V
Input capacitance
C
ies
V
CE
= 10 V, V
GE
= 0, f = 1 MHz
4200
pF
Rise time
t
r
0.25
Turn-on time
t
on
0.37
Fall time
t
f
0.09 0.20
Switching time
Turn-off time
t
off
Resistive Load
V
CC
= 600 V, I
C
= 60 A
V
GG
= 15 V, R
G
= 51
(Note 1)
0.40
s
Diode forward voltage
V
F
I
F
= 15 A, V
GE
= 0
1.1 1.9 V
Reverse recovery time
t
rr
I
F
= 60 A, di/dt = -20 A/s
1.4 3.0 s
Note 1: Switching time measurement circuit and input/output waveforms
10%
90%
V
GE
V
CE
I
C
t
d (off)
t
off
t
r
t
on
0
0
t
f
10%
10%
90%
90%
R
G
V
CC
R
L
0
GT60M323
2004-07-06
3
Col
l
ect
o
r
-
e
m
itte
r s
a
tu
r
a
ti
on
volta
g
e
V
CE
(
s
a
t
)
(V)
C
o
llect
or c
u
rre
nt
I C
(A
)
Collector-emitter voltage VCE (V)
I
C
V
CE
Co
l
l
e
cto
r
cu
rr
ent
I
C
(
A
)
Collector-emitter voltage VCE (V)
I
C
V
CE
C
o
llect
or c
u
rre
nt
I C
(A
)
Collector-emitter voltage VCE (V)
I
C
V
CE
Co
l
l
e
c
t
or
cu
rr
en
t I
C
(
A
)
Gate-emitter voltage VGE (V)
I
C
V
GE
Case temperature Tc (C)
V
CE (sat)
Tc
8
0
0 1 2 3 4 5
20
80
100
40
60
120
VGE = 20 V
9
7
15
10
6
Common
emitter
Tc
= -40C
9
VGE = 20 V
8
0
0
1
2
3
4
5
20
80
100
40
60
120
7
15
10
6
Common
emitter
Tc
= 25C
VGE = 20 V
10
0
0 1 2 3 4 5
20
80
100
40
60
120
8
7
15
9
6
Common
emitter
Tc
= 125C
Tc
= 125C
-40
0
0
2
4
6
8
10
20
40
60
80
25
Common
emitter
VCE = 5V
IC = 10 A
80
0
-60
-20 20 60 100 140
1
2
3
4
60
30
Common
emitter
VGE = 15 V
GT60M323
2004-07-06
4
C
o
llect
or c
u
rre
nt
I C
(A
)
Gate
-e
mi
tt
er
voltag
e V
GE
(V
)
Gate charge QG (nC)
V
CE
, V
GE
Q
G
C
o
llect
or
-e
m
i
tte
r
v
o
lt
a
ge
V
CE
(
V
)
Gate resistance RG (
)
Switching Time R
G
Switc
h
in
g
ti
m
e
(
s)
Collector current IC (A)
Switching Time I
C
S
w
itc
h
in
g
ti
m
e
(
s)
C
apaci
t
anc
e
C
(p
F)
Collector-emitter voltage VCE (V)
C V
CE
Collector- emitter voltage VCE (V)
Safe Operating Area
Collector-emitter voltage VCE (V)
Reverse Bias SOA
C
o
llect
or c
u
rre
nt
I C
(A
)
VCE = 150 V
0
0 60 120 180 240
50
100
150
200
100
50
0
5
10
15
20
Common emitter
RL = 2.5
Tc
= 25C
Cres
10
1
10
100
1000 10000
100
1000
10000
Coes
Cies
Common
emitter
VGE = 0
f
= 1 MHz
Tc
= 25C
0.01
1 10 100
1000
0.1
1
10
ton
toff
tr
tf
Common emitter
VCC = 600 V
IC = 60 A
VGG =
15
V
Tc
= 25C
0.01
0
10
50
70
0.1
1
10
toff
ton
tf
tr
20
30
40 60
Common emitter
VCC = 600 V
RG = 51
VGG =
15
V
Tc
= 25C
1
1 10 100
1000
10000
10
100
1000
10 s*
1 ms*
100 s*
10 ms
*
IC max (pulsed)*
IC max
(continuous)
DC
operation
* Single non-repetitive
pulse Tc
= 25C
Curves must be derated
linearly with increase in
temperature.
1
1
10
100
1000 10000
10
100
1000
Tj <= 125C
VGG = 20 V
RG = 10
GT60M323
2004-07-06
5
Case temperature
Tc
(C)
I
C
max Tc
Maxi
mu
m D
C
c
o
l
l
e
c
t
o
r
c
u
rren
t
I C
max
(A)
Pulse width tw (s)
Forward voltage VF (V)
I
F
V
F
F
o
r
w
ar
d
c
u
r
r
en
t I
F
(A)
Pe
ak
rev
e
rs
e r
e
co
v
e
r
y
cu
rr
ent
I rr
(A
)
Forward current IF (A)
t
rr
, I
rr
I
F
R
th (t)
t
w
T
r
a
n
sie
n
t t
h
e
r
m
a
l im
pe
da
n
c
e
R
th
(t
)
(
C/
W
)
Reve
rs
e
r
e
c
o
ve
ry
ti
m
e
t
rr
(
s)
Pe
ak
rev
e
rs
e r
e
co
v
e
r
y
cu
rr
ent
I rr
(A
)
di/dt (A/s)
t
rr
, I
rr
di/dt
Reve
rs
e
r
e
c
o
ve
ry
ti
m
e
t
rr
(
s)
0
25 50
100 125
150
30
50
70
40
60
10
20
75
Common emitter
VGE = 15 V
10
-2
10
-5
10
-4
10
-1
10
0
10
2
10
0
10
1
10
2
Tc
= 25C
10
-1
10
-2
10
-3
10
1
Diode stage
IGBT stage
0
0 0.4
1.6 2.0 2.4
60
80
100
40
1.2
0.8
-40
25
Tc
= 125C
20
Common
collector
0.8
0
20
80
1.2
1.4
1.6
1.0
60
40
t
rr
I
rr
10
14
16
18
12
Common Collector
di/dt
= -20 A/s
Tc
= 25C
0.0
0 40
180
0.8
1.2
1.6
0.4
160
80
t
rr
I
rr
0
40
60
80
20
120
Common collector
IF = 60 A
Tc
= 25C
GT60M323
2004-07-06
6
The information contained herein is subject to change without notice.
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responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
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conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
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and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
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