MG200Q2YS60A
2001-08-28
1
TOSHIBA IGBT Module Silicon N Channel IGBT
MG200Q2YS60A
(1200V/200A 2in1)
High Power
Switching
Applications
Motor Control Applications
Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
(short circuit and over temperature)
The electrodes are isolated from case.
Low thermal resistance
V
CE (sat)
= 2.4 V (typ.)
Equivalent Circuit
Signal terminal
1. G
(L) 2. F
O
(L)
3.
E (L)
4.
V
D
5. G
(H) 6. F
O
(H)
7.
E (H)
8.
Open
5
6
7
1
2
3
E1/C2
1
E2
F
O
F
O
OT
4
MG200Q2YS60A
2001-08-28
2
Package Dimensions: 2-123C1B
122 1.0
110 0.3
20.5
0.8
20.5
0.8
119 0.5
20
0.8
26 0.8 36.7 0.8
50
0.3
25.4
0.5
59
0.5
36 0.8
62
1.0
26 0.8
20 0.8
10.5
0.8
10.5
0.8
16
4 R6
13
15.3
6
2.54
2.54
JAPAN
E2
C1
1
3
5
7
2
4
6
8
5.5
4
26
1.0 0.3
3 M6
26
1.0 0.3
37.5
1.0 0.5
15.24
C2E1
2
3.0
8
0.64
Unit: mm
1. G
(L) 2.
F
O
(L)
3.
E (L)
4.
V
D
5. G
(H) 6.
F
O
(H)
7.
E (H)
8.
Open
Signal Terminal Layout
1.
G (L)
2.
F
O
(L)
3.
E (L)
4.
V
D
5.
G (H)
6.
F
O
(H)
7.
E (H)
8.
Open
Weight: 375 g
2.54
8
6
7
5
2.
54
25.
4
0.
6
2.
54
4
2
3
1
MG200Q2YS60A
2001-08-28
3
Maximum Ratings
(Ta
=
=
=
=
25C)
Stage Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V
CES
1200
V
Gate-emitter voltage
V
GES
20 V
DC I
C
200
Collector current
1 ms
I
CP
400
A
DC I
F
200
Forward current
1 ms
I
FM
400
A
Inverter
Collector power dissipation (Tc
=
25C)
P
C
2000
W
Control voltage (OT)
V
D
20
V
Fault input voltage
VF
O
20
V
Control
Fault input current
IF
O
20
mA
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-
40~125 C
Operation temperature range
T
ope
-
20~100
C
Isolation voltage
V
isol
2500
(AC
1
min)
V
Module
Screw torque
3 (M5)
N
m
Electrical Characteristics
(T
j
=
=
=
=
25C)
1. Inverter
Stage
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
V
GE
=
20 V, V
CE
=
0
+
3/
-
4
mA
Gate leakage current
I
GES
V
GE
=
+
10 V, V
CE
=
0
100
nA
Collector cut-off current
I
CES
V
CE
=
1200 V, V
GE
=
0
1.0 mA
Gate-emitter cut-off voltage
V
GE (off)
V
CE
=
5 V, I
C
=
200
mA
6.0 7.0 8.0 V
Tj
=
25C
2.4 2.8
Collector-emitter saturation voltage
V
CE (sat)
V
GE
=
15 V,
I
C
=
200 A
Tj
=
125C
3.2
V
Input capacitance
C
ies
V
CE
=
10 V, V
GE
=
0, f
=
1 MHz
15000
pF
Turn-on delay time
t
d (on)
0.10
1.00
Turn-off time
t
off
2.00
Switching time
Fall time
t
f
0.50
Reverse recovery time
t
rr
V
CC
=
600 V, I
C
=
200 A
V
GE
=
15 V, R
G
=
10
W
(Note
1)
0.50
m
s
Forward voltage
V
F
I
F
=
200 A
2.4 2.8 V
Note 1: Switching time test circuit & timing chart
2. Control
(Tc
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Fault output current
OC
V
GE
=
15 V
240
A
Over temperature
OT
100
125
C
Fault output delay time
t
d (Fo)
V
CC
=
600 V, V
GE
=
15 V
8
m
s
MG200Q2YS60A
2001-08-28
4
3. Module
(Tc
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Inverter IGBT stage
0.062
Junction to case thermal resistance
R
th (j-c)
Inverter FRD stage
0.136
C/W
Case to fin thermal resistance
R
th (c-f)
With silicon compound
0.013
C/W
Switching Time Test Circuit
Timing Chart
I
C
R
G
R
G
L
I
F
-
V
GE
V
CC
t
d (on)
t
d (off)
t
rr
90%
90%
10%
10%
t
f
I
C
V
GE
10%
I
rr
90% I
rr
20% I
rr
MG200Q2YS60A
2001-08-28
5
Remark
<Short circuit capability condition>
l Short circuit capability is 6 ms after fault output signal.
Please keep following condition to use fault output signal.
V
CC
<
= 750 V
14.8 V <
= V
GE
<
= 17.0 V
R
G
>
= 10 W
T
j
<
= 125C
<Gate voltage>
l To use this product, V
GE
must be provided higher than 14.8 V.
In case V
GE
is less than 14.8 V, fault signal F
O
may not be output even under error conditions.
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