MG200Q2YS65H
2002-10-04
1
TOSHIBA IGBT Module Silicon N Channel IGBT
MG200Q2YS65H
High Power & High Speed Switching
Applications
High input impedance
Enhancement-mode
The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings
(Tc
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Collector-emitter voltage
V
CES
1200 V
Gate-emitter voltage
V
GES
20 V
DC I
C
200
Collector current
1 ms
I
CP
400
A
DC I
F
200
Forward current
1 ms
I
FM
400
A
Collector power dissipation
(Tc
= 25C)
P
C
1310 W
Junction temperature
T
j
150 C
Storage temperature range
T
stg
-40 to 125
C
Isolation voltage
V
Isol
2500
(AC 1 minute)
V
Terminal
3
Screw torque
Mounting
3
Nm
Unit: mm
JEDEC
JEITA
TOSHIBA
2-109C4A
Weight: 430 g (typ.)
G1 E1/C2
E2
G2
E1
E2
C1
MG200Q2YS65H
2002-10-04
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GES
V
GE
= 20 V, V
CE
= 0
500
nA
Collector cut-off current
I
CES
V
CE
= 1200 V, V
GE
= 0
2.0 mA
Gate-emitter cut-off voltage
V
GE (off)
I
C
= 200 mA, V
CE
= 5 V
4.0
7.0 V
Tc
= 25C
3.0 4.0
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 200 A,
V
GE
= 15 V
Tc
= 125C
3.6
V
Input capacitance
C
ies
V
CE
= 10 V, V
GE
= 0, f = 1 MHz
17000 pF
Turn-on delay time
t
d (on)
0.05
Rise time
t
r
0.05
Turn-on time
t
on
0.10
Turn-off delay time
t
d (off)
0.55
Fall time
t
f
0.05 0.15
Switching time
Turn-off time
t
off
Inductive load
V
CC
= 600 V, I
C
= 200 A
V
GE
= 15 V, R
G
= 4.7 W
0.60
ms
Forward voltage
V
F
I
F
= 200 A, V
GE
= 0
2.4 3.5 V
Reverse recovery time
t
rr
I
F
= 200 A, V
GE
= -10 V,
di/dt
= 700 A/ms
0.1
ms
Transistor stage
0.095
Thermal resistance
R
th (j-c)
Diode stage
0.21
C/W
Turn-on E
on
20
Switching loss
Turn-off E
off
Inductive load
V
CC
= 600 V, I
C
= 200 A
V
GE
= 15 V, R
G
= 4.7 W
Tc
= 125C
17
mJ
Note: Switching time measurement circuit and input/output waveforms
I
C
R
G
R
G
L
I
F
-V
GE
V
CC
V
CE
V
GE
I
C
0
0
90%
90%
10%
10%
90%
t
d (off)
t
off
t
f
t
r
t
d (on)
t
on
10%
t
rr
MG200Q2YS65H
2002-10-04
3
Collector-emitter voltage V
CE
(V)
I
C
V
CE (sat)
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Collector-emitter voltage V
CE
(V)
I
C
V
CE (sat)
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Gate-emitter voltage V
GE
(V)
I
C
V
GE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Forward voltage V
F
(V)
I
F
V
F
Fo
rw
ar
d
c
u
r
r
en
t I
F
(A
)
0
0
4
8
12
16
4 8 12 16 20
Common emitter
Tc
= 25C
IC = 400 A
100 A
200 A
0
0
50
100
150
200
4 8 12
16
Common emitter
VCE = 5 V
Tc
= 125C
-40C
25C
0
0
100
200
300
400
1 2 3 4
Tc
= 125C
25C
Common cathode
VGE = 0
0
0
100
200
300
400
2 4 6 8 10
VGE = 8 V
10 V
12 V
20 V
18 V
15 V
Common emitter
Tc
= 125C
0
0
4
8
12
16
4 8 12
16 20
Common emitter
Tc
= 125C
IC = 400 A
100 A
200 A
12 V
0
0
100
200
300
400
2 4 6 8 10
Common emitter
Tc
= 25C
VGE = 8 V
PC = 1310 W
10 V
20 V
18 V
15 V
MG200Q2YS65H
2002-10-04
4
Switch
in
g
lo
s
s
(
m
J
)
Switch
in
g
ti
m
e
(
m
s)
Collector current I
C
(A)
Switching time I
C
Switch
in
g
ti
m
e
(
m
s)
Collector current I
C
(A)
Switching time I
C
Switch
in
g
ti
m
e
(
m
s)
Gate resistance R
G
(
9)
Switching time R
G
Switch
in
g
ti
m
e
(
m
s)
Gate resistance R
G
(
9)
Switching time R
G
Collector current I
C
(A)
Switching loss I
C
Gate resistance R
G
(
9)
Switching loss R
G
Switch
in
g
lo
s
s
(
m
J
)
0.01
0.1
1
1 100
10
tr
td (on)
ton
Common emitter
VCC = 600 V
IC = 200 A
VGE = 15 V
:
Tc
= 25C
:
Tc
= 125C
0.01
0.1
10
1
100
10
:
Tc
= 25C
:
Tc
= 125C
Common emitter
VCC = 600 V
IC = 200 A
VGE = 15 V
toff
td (off)
tf
1
0.01
10
0.1
1
100
1000
toff
td (off)
tf
Common emitter
VCC = 600 V
VGE = 15 V
RG = 4.7 W
:
Tc
= 25C
:
Tc
= 125C
0.1
1
100
10 1000
100
Eoff
Edsw
Eon
:
Tc
= 25C
:
Tc
= 125C
Common emitter
VCC = 600 V
VGE = 15 V
RG = 4.7 W
10
0.01
10
0.1
1
100
1000
:
Tc
= 25C
:
Tc
= 125C
Common emitter
VCC = 600 V
VGE = 15 V
RG = 4.7 W
tr
ton
td (on)
1
10
1000
1
100
10
Eon
Eoff
Edsw
:
Tc
= 25C
:
Tc
= 125C
Common emitter
VCC = 600 V
IC = 200 A
VGE = 15 V
100
MG200Q2YS65H
2002-10-04
5
T
r
an
s
i
en
t
th
er
ma
l
re
s
i
s
t
a
n
c
e
R
th (t)
(
C
/
W
)
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Charge Q
G
(nC)
V
CE
, V
GE
Q
G
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Collector-emitter voltage V
CE
(V)
C V
CE
C
apaci
t
anc
e C
(p
F)
Collector-emitter voltage V
CE
(V)
Short circuit SOA
Co
lle
ct
o
r
cu
r
r
e
n
t
(
x
ti
m
e
s
)
Collector-emitter voltage V
CE
(V)
Reverse bias SOA
Pulse width t
w
(s)
R
th (t)
t
w
0
3
6
0 400
1400
200 800
1200
VCC <= 900 V
Tj <= 125C
tw = 5 ms
5
4
2
1
600 1000
0.1
1
1000
0
500
1500
Tj <= 125C
VGE = 15 V
RG = 4.7 W
100
1000
10
100
0.01
10000
100000
1
100
Cies
Coes
Cres
Common emitter
VGE = 0
f
= 1 MHz
Tc
= 25C
1000
0.1
10
0.001
0.001
0.1
1
0.1
10
Diode stage
Transistor stage
Tc
= 25C
0.01
0.01 1
Gate
-e
mitt
er
voltag
e V
GE
(V
)
0
0
800
1600
800 2000
Common emitter
RL = 3 W
Tc
= 25C
400
1200
400 1600
1200
8
16
4
12
VCE = 0
600 V
400 V
200 V
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