MG300Q2YS60A
2002-09-06
1
TOSHIBA IGBT Module Silicon N Channel IGBT
MG300Q2YS60A
(1200V/300A 2in1)
High Power Switching Applications
Motor Control Applications
Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
(short circuit and over temperature)
The electrodes are isolated from case.
Low thermal resistance
V
CE (sat)
= 2.4 V (typ.)
Equivalent Circuit
Signal terminal
1. G
(L) 2. F
O
(L)
3.
E (L)
4.
V
D
5. G
(H) 6. F
O
(H)
7.
E (H)
8.
Open
5
6
7
1
2
3
E1/C2
1
E2
F
O
F
O
OT
4
MG300Q2YS60A
2002-09-06
2
Package Dimensions: 2-123C1B
1. G
(L) 2.
F
O
(L)
3.
E (L)
4.
V
D
5. G
(H) 6.
F
O
(H)
7.
E (H)
8.
Open
Signal Terminal Layout
1.
G (L)
2.
F
O
(L)
3.
E (L)
4.
V
D
5.
G (H)
6.
F
O
(H)
7.
E (H)
8.
Open
Weight: 375 g
2.54
8
6
7
5
2.
54
25.
4
0.
6
2.
54
4
2
3
1
MG300Q2YS60A
2002-09-06
3
Maximum Ratings
(Ta
=
=
=
=
25C)
Stage Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V
CES
1200
V
Gate-emitter voltage
V
GES
20 V
DC I
C
300
Collector current
1 ms
I
CP
600
A
DC I
F
300
Forward current
1 ms
I
FM
600
A
Inverter
Collector power dissipation (Tc
=
25C)
P
C
2800
W
Control voltage (OT)
V
D
20
V
Fault input voltage
VF
O
20
V
Control
Fault input current
IF
O
20
mA
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-
40~125 C
Operation temperature range
T
ope
-
20~100
C
Isolation voltage
V
isol
2500
(AC
1
min)
V
Module
Screw torque
3 (M5)
N
m
Electrical Characteristics
(T
j
=
=
=
=
25C)
1. Inverter
Stage
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
V
GE
=
20 V, V
CE
=
0
+
3/
-
4
mA
Gate leakage current
I
GES
V
GE
=
+
10 V, V
CE
=
0
100
nA
Collector cut-off current
I
CES
V
CE
=
1200 V, V
GE
=
0
1.0 mA
Gate-emitter cut-off voltage
V
GE (off)
V
CE
=
5 V, I
C
=
300
mA
6.0 7.0 8.0 V
Tj
=
25C
2.4 2.8
Collector-emitter saturation voltage
V
CE (sat)
V
GE
=
15 V,
I
C
=
300 A
Tj
=
125C
3.2
V
Input capacitance
C
ies
V
CE
=
10 V, V
GE
=
0, f
=
1 MHz
21000
pF
Turn-on delay time
t
d (on)
0.10
1.00
Turn-off time
t
off
2.00
Switching time
Fall time
t
f
0.50
Reverse recovery time
t
rr
V
CC
=
600 V, I
C
=
300 A
V
GE
=
15 V, R
G
=
6.8
W
(Note
1)
0.50
m
s
Forward voltage
V
F
I
F
=
300 A
2.1 2.6 V
Note 1: Switching time test circuit & timing chart
2. Control
(Tc
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Fault output current
OC
V
GE
=
15 V
360
A
Over temperature
OT
100
125
C
Fault output delay time
t
d (Fo)
V
CC
=
600 V, V
GE
=
15 V
8
m
s
MG300Q2YS60A
2002-09-06
4
3. Module
(Tc
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Inverter IGBT stage
0.044
Junction to case thermal resistance
R
th (j-c)
Inverter FRD stage
0.068
C/W
Case to fin thermal resistance
R
th (c-f)
With silicon compound
0.013
C/W
Switching Time Test Circuit
Timing Chart
I
C
R
G
R
G
L
I
F
-
V
GE
V
CC
t
d (on)
t
d (off)
t
rr
90%
90%
10%
10%
t
f
I
C
V
GE
10%
I
rr
90% I
rr
20% I
rr
MG300Q2YS60A
2002-09-06
5
Remark
<Short circuit capability condition>
l Short circuit capability is 6 ms after fault output signal.
Please keep following condition to use fault output signal.
V
CC
<
= 750 V
14.8 V <
= V
GE
<
= 17.0 V
R
G
>
= 6.8 W
T
j
<
= 125C
<Gate voltage>
l To use this product, V
GE
must be provided higher than 14.8 V.
In case V
GE
is less than 14.8 V, fault signal F
O
may not be output even under error conditions.
MG300Q2YS60A
2002-09-06
6
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Collector-emitter voltage V
CE
(V)
I
C
V
CE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Collector-emitter voltage V
CE
(V)
I
C
V
CE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Gate-emitter voltage V
GE
(V)
I
C
V
GE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
0
0 1
5
100
300
400
500
2 3 4
200
600
8 V
Common emitter
Tj
=
25C
VGE
=
20 V
12 V
15 V
9 V
10 V
0
0 1
5
100
300
400
500
2 3 4
200
600
VGE
=
20 V
15 V
Common emitter
Tj
=
125C
12 V
10 V
9 V
8 V
0
0 5 10 15 20
2
4
6
8
10
12
IC
=
600 A
Common emitter
Tj
=
25C
300 A
150 A
0
0 5 10 15 20
2
4
6
8
10
12
IC
=
600 A
Common emitter
Tj
=
125C
300 A
150 A
0
0 5 10 15 20
2
4
6
8
10
12
IC
=
600 A
Common emitter
Tj
=
-
40C
300 A
150 A
0
0 4 8 12
100
300
400
600
25C
Tj
=
125C
-
40C
200
500
Common emitter
VCE
=
5 V
MG300Q2YS60A
2002-09-06
7
S
W
time
(
n
s)
S
W
loss E
on
, E
of
f
(
m
J)
Forward voltage V
F
(V)
I
F
V
F
Fo
rw
ar
d
c
u
r
r
en
t I
F
(A
)
Gate
-e
mitt
er
voltag
e V
GE
(V
)
Charge Q
G
(nC)
V
CE
, V
GE
Q
G
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Gate resistance R
G
(
9
)
SW time R
G
S
W
time
(
n
s)
Gate resistance R
G
(
9
)
E
on
, E
off
R
G
Collector current I
C
(A)
SW time I
C
Collector current I
C
(A)
E
on
, E
off
I
C
S
W
loss E
on
, E
of
f
(
m
J)
0
0 500
1000
1500
2500
200
400
600
800
1000
0
4
8
12
16
20
2000
VCE
=
0 V
200 V
600 V
400 V
Common emitter
RL
=
2
W
Tj
=
25C
10
5
0
10 15 20 25
1000
100
10000
toff
tf
tr
td (on)
ton
td (off)
Common emitter
VCC
=
600 V
IC
=
300 A
Tj
=
25C
VGE
=
15 V
Tj
=
125C
10
0
100
1000
5 10 15 20 25
Eoff
Eon
Common emitter
VCC
=
600 V
IC
=
300 A
Tj
=
25C
VGE
=
15 V
Tj
=
125C
10
0 50
150
250
300
100
1000
10000
100 200
Common emitter
VCC
=
600 V
RG
=
6.8
W
Tj
=
25C
VGE
=
15 V
Tj
=
125C
ton
td (on)
toff
td (off)
tf
tr
1
0 50
150
200
300
10
100
Eoff
Eon
Common emitter
VCC
=
600 V
RG
=
6.8
W
Tj
=
25C
VGE
=
15 V
Tj
=
125C
100 250
0
0 1
5
100
300
400
500
2 3 4
200
600
125C
Tj
=
25C
-
40C
Common cathode
VGE
=
0 V
MG300Q2YS60A
2002-09-06
8
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Forward current I
F
(A)
I
rr
, t
rr
I
F
R
e
v
e
rs
e
rec
o
v
e
ry
ti
me
t
rr
(ns
)
R
e
v
e
rs
e
rec
o
v
e
ry
c
u
r
r
e
n
t I
rr
(A
)
Forward current I
F
(A)
E
dsw
I
F
Reve
r
s
e
r
e
c
o
ve
r
y
l
o
ss E
ds
w
(
m
J
)
Collector-emitter voltage V
CE
(V)
C V
CE
C
apaci
t
anc
e C
(p
F)
Collector-emitter voltage V
CE
(V)
Safe-operating area
Collector-emitter voltage V
CE
(V)
Reverse bias SOA
Pulse width t
w
(s)
R
th
t
w
R
th (j-c)
(
C
/
W
)
10
0 50
150
200
300
100
1000
100 250
trr
Irr
Common cathode
VCC
=
600 V
RG
=
6.8
W
Tj
=
25C
VGE
=
15 V
Tj
=
125C
100
0.01 0.1 1 10 100
1000
10000
100000
Cies
Coes
Cres
Common emitter
VGE
=
0 V
f
=
1 MHz
Tj
=
25C
1
0
10
100
1000
400 800 1200
Tj
<
=
125C
RG
=
6.8
W
VGE
=
15 V
0.1
0 50
150
250
300
1
10
100
100 200
Common cathode
VCC
=
600 V
RG
=
6.8
W
Tj
=
25C
VGE
=
15 V
Tj
=
125C
0.001
0.001
0.01
0.1 1 10
0.01
0.1
1
Diode stage
Transistor stage
Tc
=
25C
3
1 10 100
1000
10000
10
100
1000
IC max (continuous)
IC max (pulsed)
*
*
: Single
nonrepetitive
pulse Tc
=
25C
Curves must
be derated
linearly with
increase in
temperature.
DC
operation
1 ms
*
50
m
s
*
100
m
s
*
MG300Q2YS60A
2002-09-06
9
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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