MIG75J6CSB1W
2002-08-26
1
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG75J6CSB1W
(600V/75A 6in1)
High Power Switching Applications
Motor Control Applications
Integrates inverter and control circuits (IGBT drive units, and units for protection against short-circuit current,
overcurrent, undervoltage and overtemperature) into a single package.
The electrodes are isolated from case.
Low thermal resistance
V
CE (sat)
= 1.8 V (typ.)
UL recognized: File No. E87989
Equivalent Circuit
1. V
D
(U)
2.
FO (U)
3.
IN (U)
4.
GND (U)
5.
V
D
(V)
6.
FO (V)
7.
IN (V)
8. GND
(V) 9. V
D
(W)
10.
FO (W)
11.
IN (W)
12. GND (W) 13.
V
D
(L)
14.
FO (L)
15. Open 16. Open 17. IN
(X) 18.
IN
(Y) 19.
IN
(Z) 20.
GND
(L)
16
19
20
N
P
18
17
14
13
15
4
3
2
1
8
7
6
5
12 11 10
9
GND
IN
FO V
D
V
S
OUT
GND
GND IN FO V
D
V
S
OUT
GND
GND IN FO V
D
V
S
OUT
GND
GND IN FO V
D
V
S
OUT
GND
GND
IN
FO V
D
V
S
OUT
GND
GND
IN
FO V
D
V
S
OUT
GND
U
V
W
B
MIG75J6CSB1W
2002-08-26
2
Package Dimensions: TOSHIBA 2-108G1D
1. V
D
(U)
2.
FO (U)
3.
IN (U)
4.
GND (U)
5.
V
D
(V)
6.
FO (V)
7.
IN (V)
8.
GND (V)
9.
V
D
(W)
10.
FO (W)
11.
IN (W)
12. GND (W)
13. V
D
(L)
14.
FO (L)
15.
Open
16.
Open
17.
IN (X)
18.
IN (Y)
19.
IN
(Z)
20.
GND
(L)
MIG75J6CSB1W
2002-08-26
3
Signal Terminal Layout
1. V
D
(U)
2.
FO (U)
3.
IN (U)
4.
GND (U)
5.
V
D
(V)
6.
FO (V)
7.
IN (V)
8.
GND (V)
9.
V
D
(W)
10.
FO (W)
11.
IN (W)
12. GND (W)
13. V
D
(L)
14.
FO (L)
15.
Open
16.
Open
17.
IN (X)
18.
IN (Y)
19.
IN
(Z)
20.
GND
(L)
MIG75J6CSB1W
2002-08-26
4
Maximum Ratings
(T
j
=
=
=
=
25C)
Stage Characteristics
Condition
Symbol
Ratings
Unit
Supply voltage
P-N power terminal
V
CC
450 V
Collector-emitter voltage
V
CES
600 V
Collector current
Tc
=
25C, DC
I
C
75 A
Forward current
Tc
=
25C, DC
I
F
75
A
Collector power dissipation
Tc
=
25C, DC
P
C
460 W
Inverter
Junction temperature
T
j
150
C
Control supply voltage
V
D
-GND Terminal
V
D
20 V
Input voltage
IN-GND Terminal
V
IN
20 V
Fault output voltage
FO-GND Terminal
V
FO
20 V
Control
Fault output current
FO sink current
I
FO
14 mA
Operating temperature
Tc
-
20 to
+
100
C
Storage temperature range
T
stg
-
40 to
+
125
C
Isolation voltage
AC 1 min
V
ISO
2500 V
Screw torque (terminal)
M4
2
N
m
Module
Screw torque (mounting)
M5
3 N
m
Electrical Characteristics
1. Inverter
Stage
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
T
j
=
25C
1
Collector cut-off current
I
CEX
V
CE
=
600 V
T
j
=
125C
10
mA
T
j
=
25C
1.5 1.8 2.2
Collector-emitter saturation voltage
V
CE (sat)
V
D
=
15 V
I
C
=
75 A
V
IN
=
15 V
0 V
T
j
=
125C
2.0
V
Forward voltage
V
F
I
F
=
75 A, T
j
=
25C
1.8 2.2
V
t
on
1.3 2.2
t
c (on)
0.25
t
rr
0.2
t
off
1.1 2.1
Switching time
t
c (off)
V
CC
=
300 V, I
C
=
75 A
V
D
=
15 V, V
IN
=
15 V
0 V
T
j
=
25C, Inductive load
(Note 1)
0.2
m
s
Note 1: Switching time test circuit and timing chart
MIG75J6CSB1W
2002-08-26
5
2. Control
Stage
(T
j
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
High side
I
D (H)
13 17
Control circuit current
Low side
I
D (L)
V
D
=
15 V
39 51
mA
Input on signal voltage
V
IN (on)
1.4 1.6 1.8 V
Input off signal voltage
V
IN (off)
V
D
=
15 V
2.2 2.5 2.8 V
Protection I
FO (on)
10 12
Fault output current
Normal I
FO (off)
V
D
=
15 V
0.1
mA
Over current protection
trip level
Inverter OC
V
D
=
15 V, T
j
<
=
125C 120
A
Short circuit protection
trip level
Inverter SC
V
D
=
15 V, T
j
<
=
125C 120
A
Over current cut-off time
t
off (OC)
V
D
=
15 V
5
m
s
Trip
level
OT
110 118 125
Over temperature
protection
Reset level
OTr
Case temperature
98
C
Trip
level
UV
11.0 12.0 12.5
Control supply under
voltage protection
Reset level
UVr
12.0 12.5 13.0
V
Fault output pulse width
t
FO
V
D
=
15
V
1 2 3 ms
3. Thermal
Resistance
(Tc
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Inverter IGBT
0.270
Junction to case thermal resistance
R
th (j-c)
Inverter FRD
0.313
C/W
Case to fin thermal resistance
R
th (c-f)
Compound
is
applied
0.017
C/W
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