MP4104
2002-11-20
1
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1)
MP4104
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
Small package by full molding (SIP 10 pin)
High collector power dissipation (4 devices operation)
:
P
T
= 4 W (Ta = 25C)
High collector current: I
C (DC)
= 4 A (max)
High DC current gain: h
FE
= 2000 (min) (V
CE
= 2 V, I
C
= 1.5 A)
Maximum Ratings
(Ta = 25C)
Characteristics Symbol
Rating
Unit
Collector-base voltage
V
CBO
120 V
Collector-emitter voltage
V
CEO
100 V
Emitter-base voltage
V
EBO
6 V
DC I
C
4
Collector current
Pulse I
CP
6
A
Continuous base current
I
B
0.5 A
Collector power dissipation
(1 device operation)
P
C
2.0 W
Collector power dissipation
(4 devices operation)
P
T
4.0 W
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55 to 150
C
Array Configuration
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA 2-25A1A
Weight: 2.1 g (typ.)
3
2
1
R1 R2
5
4
7
9
10
R1 4.5 k R2
300
6 8
MP4104
2002-11-20
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance of junction to
ambient
(4 devices operation, Ta = 25C)
R
th (j-a)
31.3
C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
T
L
260
C
Electrical Characteristics
(Ta = 25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 120 V, I
E
= 0 A
10 A
Collector cut-off current
I
CEO
V
CE
= 100 V, I
B
= 0 A
10 A
Emitter cut-off current
I
EBO
V
EB
= 6 V, I
C
= 0 A
0.5
2.5 mA
Collector-base breakdown voltage
V
(BR) CBO
I
C
= 1 mA, I
E
= 0 A
120
V
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
= 10 mA, I
B
= 0 A
100
V
h
FE (1)
V
CE
= 2 V, I
C
= 1.5 A
2000
15000
DC current gain
h
FE (2)
V
CE
= 2 V, I
C
= 3.0 A
1000
Collector-emitter V
CE (sat)
I
C
= 1.5 A, I
B
= 3 mA
1.5
Saturation voltage
Base-emitter V
BE (sat)
I
C
= 1.5 A, I
B
= 3 mA
2.0
V
Transition frequency
f
T
V
CE
= 2 V, I
C
= 0.5 A
60 MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0 A, f = 1 MHz
30 pF
Turn-on time
t
on
0.3
Storage time
t
stg
2.0
Switching time
Fall time
t
f
I
B1
= -I
B2
= 3 mA
0.4
s
I
B1
20 s
V
CC
= 30 V
Output
20
I
B2
I
B1
Input
I
B2
MP4104
2002-11-20
3
Base current I
B
(mA)
V
CE
I
B
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Collector current I
C
(A)
V
CE (sat)
I
C
C
o
l
l
e
ct
or
-e
mi
tte
r s
a
tu
rati
on
vol
t
ag
e
V
CE (sat)
(V
)
Collector current I
C
(A)
V
BE (sat)
I
C
B
a
se-
e
mi
tte
r sa
tu
rati
on v
o
l
t
age
V
BE (sat)
(V
)
Collector current I
C
(A)
h
FE
I
C
D
C
c
u
rr
en
t
g
a
i
n h
FE
Collector-emitter voltage V
CE
(V)
I
C
V
CE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Base-emitter voltage V
BE
(V)
I
C
V
BE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
2
0
0.5
IB = 0.15 mA
Common emitter
Ta = 25C
0.2
0.3
10
1
3
1 2 3 4 5 6 7
1
0
6
5
4
3
0
300
0.05 0.1
0.3
0.5 1
3 5 10
500
1000
3000
5000
10000
20000
Common emitter
VCE = 2 V
25
Ta = 100C
-55
0.3 0.5
1
3 5
10
0.1
10
0.3
0.5
1
3
5
Common emitter
IC/IB = 500
25
Ta = -55C
100
0.3 0.5
1
3 5
10
0.1
10
0.3
0.5
1
3
5
Common emitter
IC/IB = 500
25
Ta = -55C
100
0
0.1
0.3 1
10 30 100
3 300
2.4
0.4
1.6
2.0
0.8
1.2
Common emitter
Ta = 25C
0.5
1
2
3
4
5
IC = 6 A
500
0.1
0
0
2
1
6
5
4
3
25
Ta = 100C
-55
0.4 0.8 1.2 1.6 2.0 2.4 2.8
Common emitter
VCE = 2 V
MP4104
2002-11-20
4
Ambient temperature Ta (C)
P
T
Ta
T
o
t
a
l
po
w
e
r
di
ssi
p
a
ti
on
P
T
(W
)
Total power dissipation P
T
(W)
T
j
P
T
T
r
a
n
sie
n
t t
h
e
r
m
a
l r
e
sistanc
e
r
th
(C
/
W
)
1 2 3
4
0
160
40
80
120
5
0
-Circuit board-
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Circuit board
(1)
(2)
(3) (4)
(3)
0
8
40
2
4
6
80
120
160
200
0
-Attached on a circuit board-
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Circuit board
(4)
(2)
(1)
Collector-emitter voltage V
CE
(V)
Safe Operating Area
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
r
th
t
w
Pulse width t
w
(s)
T
r
a
n
sie
n
t t
h
e
r
m
a
l r
e
sistanc
e
r
th
(C
/
W
)
0.03
1
0.05
0.1
0.3
0.5
1
3
5
10
5 10
30
50 100
IC max (pulsed)*
100 s*
10 ms*
1 ms*
VCEO max
200
3
*: Single nonrepetitive pulse
Ta = 25C
Curves must be derated linearly
with increase in temperature.
0.001 0.01 0.1
1
10 100 1000
0.3
(4)
(3)
(2)
(1)
1
3
10
30
100
300
Curves should be applied in thermal
limited area.
(single nonrepetitive pulse)
Below figure show thermal resistance per
1 unit versus pulse width.
-No heat sink and attached on a circuit board-
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Circuit board
MP4104
2002-11-20
5
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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Handbook" etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
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The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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