MP4304
2002-11-20
1
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
MP4304
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
Small package by full molding (SIP 12 pin)
High collector power dissipation (4 devices operation)
:
P
T
= 4.4 W (Ta = 25C)
High collector current: I
C (DC)
= 3 A (max)
High DC current gain: h
FE
= 600 (min) (V
CE
= 2 V, I
C
= 1 A)
Maximum Ratings
(Ta = 25C)
Characteristics Symbol
Rating
Unit
Collector-base voltage
V
CBO
80 V
Collector-emitter voltage
V
CEO
80 V
Emitter-base voltage
V
EBO
7 V
DC I
C
3
Collector current
Pulse I
CP
5
A
Continuous base current
I
B
0.5 A
Collector power dissipation
(1 device operation)
P
C
2.2 W
Collector power dissipation
(4 devices operation)
P
T
4.4 W
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55 to 150
C
Array Configuration
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA 2-32C1B
Weight: 3.9 g (typ.)
5 12
1
6
2 3 4
8
7
9
10
11
MP4304
2002-11-20
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance of junction to
ambient
(4 devices operation, Ta = 25C)
R
th (j-a)
28.4
C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
T
L
260
C
Electrical Characteristics
(Ta = 25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 80 V, I
E
= 0 A
10 A
Emitter cut-off current
I
EBO
V
EB
= 7 V, I
C
= 0 A
10 A
Collector-base breakdown voltage
V
(BR) CBO
I
C
= 1 mA, I
E
= 0 A
80
V
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
= 10 mA, I
B
= 0 A
80
V
h
FE (1)
V
CE
= 2 V, I
C
= 1 A
600
DC current gain
h
FE (2)
V
CE
= 2 V, I
C
= 2 A
150
Collector-emitter V
CE (sat)
I
C
= 1.5 A, I
B
= 15 mA
0.25 0.5
Saturation voltage
Base-emitter V
BE (sat)
I
C
= 1.5 A, I
B
= 15 mA
1.2
V
Transition frequency
f
T
V
CE
= 2 V, I
C
= 0.1 A
85 MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0 A, f = 1 MHz
50 pF
Turn-on time
t
on
0.4
Storage time
t
stg
2.6
Switching time
Fall time
t
f
I
B1
= -I
B2
= 15 mA, duty cycle 1%
1.3
s
Flyback-Diode Rating and Characteristics
(Ta = 25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Maximum forward current
I
FM
3 A
Reverse current
I
R
V
R
= 80 V
0.4 A
Reverse voltage
V
R
I
R
= 100 A
80
V
Forward voltage
V
F
I
F
= 1 A
1.5 V
I
B1
20 s
V
CC
= 30 V
Output
20
I
B2
I
B1
Input
I
B2
MP4304
2002-11-20
3
Collector current I
C
(A)
h
FE
I
C
D
C
c
u
rr
en
t
g
a
i
n h
FE
Base current I
B
(mA)
V
CE
I
B
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Collector-emitter voltage V
CE
(V)
I
C
V
CE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Base-emitter voltage V
BE
(V)
I
C
V
BE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Collector current I
C
(A)
V
CE (sat)
I
C
Collector current I
C
(A)
V
BE (sat)
I
C
B
a
se-
e
mi
tte
r sa
tu
rati
on v
o
l
t
age
V
BE (sat)
(V
)
C
o
l
l
e
ct
or
-e
mi
tte
r s
a
tu
rati
on
vol
t
ag
e
V
CE (sat)
(V
)
0.01
-55
25
Ta = 100C
0.03 0.1 0.3
0.5
1 3
5
0.03
0.05
0.1
0.3
0.5
1
3
Common emitter
IC/IB = 100
0
0
Common emitter
VCE = 1 V
0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.4
0.8
1.2
2.0
2.4
2.8
3.2
1.6
-55
25
Ta = 100C
IC = 3 A
Common emitter
Ta = 25C
0
0.3
2
1
0.5
0.1
1 3 10
30 100
300
1000
0.1
0.2
0.3
0.4
0.5
0.1
0.01
Common emitter
IC/IB = 100
0.03
0.1 0.3
0.5
1 3
5
0.3
0.5
1
3
5
10
100
25
Ta = -55C
0
0
Common
emitter
Ta = 25C
1 2 3 4 5 6 7
0.5
1
1.5
2
2.5
3
IB = 0.5 mA
1
2
5
10
20
30
0.01
0.03 0.1 0.3 1 3
100
300
1000
3000
Common emitter
VCE = 1 V
Ta = -55C
25
100
MP4304
2002-11-20
4
Collector-emitter voltage V
CE
(V)
Safe Operating Area
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Ambient temperature Ta (C)
P
T
Ta
T
o
t
a
l
po
w
e
r
di
ssi
p
a
ti
on
P
T
(W
)
T
j
P
T
C
han
nel
te
mp
era
t
u
r
e
i
n
cr
eas
e
T
j
(
C
)
Total power dissipation P
T
(W)
r
th
t
w
T
r
a
n
sie
n
t t
h
e
r
m
a
l r
e
sistanc
e
r
th
(C
/
W
)
Pulse width t
w
(s)
Curves should be applied in thermal limited area. Below
figure show thermal resistance per 1 unit versus pulse
width.
This curve is obtained by using single nonrepetitive pulse
with no heat sink and attached on a circuit board.
0.001 0.01 0.1
1
10 100 1000
(1)
(2)
(3)
(4)
1
10
100
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Circuit board
0.05
5
*: Single nonrepetitive
pulse Ta = 25C
Curves must be derated
linearly with increase in
temperature.
10 30
50
100
200
0.1
0.3
0.5
1
3
5
10
30
IC max (pulsed)*
10 ms*
VCEO max
1 ms*
100 s*
0
8
40
2
4
6
80
120
160
200
0
Attached on a circuit board
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Circuit board
(4)
(3)
(2)
(1)
2 4 6
8
0
160
40
80
120
10
0
Attached on a circuit board
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Circuit board
(1)
(2) (3) (4)
MP4304
2002-11-20
5
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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