MP4503
2002-11-20
1
TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1)
MP4503
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
Package with heat sink isolated to lead (SIP 12 pin)
High collector power dissipation (4 devices operation)
:
P
T
= 5 W (Ta = 25C)
High collector current: I
C (DC)
= 4 A (max)
High DC current gain: h
FE
= 2000 (min) (V
CE
= 2 V, I
C
= 1 A)
Maximum Ratings
(Ta = 25C)
Rating
Characteristics Symbol
NPN
PNP
Unit
Collector-base voltage
V
CBO
100
-100
V
Collector-emitter voltage
V
CEO
80
-80
V
Emitter-base voltage
V
EBO
5
-5 V
DC I
C
4
-4
Collector current
Pulse I
CP
6
-6
A
Continuous base current
I
B
0.4
-0.4
A
Collector power dissipation
(1 device operation)
P
C
3.0 W
Ta = 25C
5.0
Collector power
dissipation
(4 devices operation)
Tc = 25C
P
T
25
W
Isolation voltage
V
Isol
1000 V
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55 to 150
C
Array Configuration
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA 2-32B1C
Weight: 6.0 g (typ.)
2
1
R1 R2
6
11
5
R1 4.5 k
8
7
12
R1 R2
4
9
R2 300
MP4503
2002-11-20
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance of junction to
ambient
(4 devices operation, Ta = 25C)
R
th (j-a)
25 C/W
Thermal resistance of junction to case
(4 devices operation, Tc = 25C)
R
th (j-c)
5.0 C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
T
L
260
C
Electrical Characteristics
(Ta = 25C)
(NPN transistor)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 100 V, I
E
= 0 A
20 A
Collector cut-off current
I
CEO
V
CE
= 80 V, I
B
= 0 A
20 A
Emitter cut-off current
I
EBO
V
EB
= 5 V, I
C
= 0 A
0.5
2.5 mA
Collector-base breakdown voltage
V
(BR) CBO
I
C
= 1 mA, I
E
= 0 A
100
V
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
= 10 mA, I
B
= 0 A
80
V
h
FE (1)
V
CE
= 2 V, I
C
= 1 A
2000
DC current gain
h
FE (2)
V
CE
= 2 V, I
C
= 3 A
1000
Collector-emitter V
CE (sat)
I
C
= 3 A, I
B
= 6 mA
1.5
Saturation voltage
Base-emitter V
BE (sat)
I
C
= 3 A, I
B
= 6 mA
2.0
V
Transition frequency
f
T
V
CE
= 2 V, I
C
= 0.5 A
60 MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0 A, f = 1 MHz
30 pF
Turn-on time
t
on
0.2
Storage time
t
stg
1.5
Switching time
Fall time
t
f
I
B1
= -I
B2
= 6 mA, duty cycle 1%
0.6
s
Emitter-Collector Diode Ratings and Characteristics
(Ta = 25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Forward current
I
FM
4 A
Surge current
I
FSM
t = 1 s, 1 shot
6 A
Forward voltage
V
F
I
F
= 1 A, I
B
= 0 A
2.0 V
Reverse recovery time
t
rr
1.0 s
Reverse recovery charge
Q
rr
I
F
= 4 A, V
BE
= -3 V, dI
F
/dt = -50 A/s
8 C
I
B1
20 s
V
CC
= 30 V
Output
10
I
B2
I
B1
Input
I
B2
MP4503
2002-11-20
3
Electrical Characteristics
(Ta = 25C)
(PNP transistor)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= -100 V, I
E
= 0 A
-20
A
Collector cut-off current
I
CEO
V
CE
= -80 V, I
B
= 0 A
-20
A
Emitter cut-off current
I
EBO
V
EB
= -5 V, I
C
= 0 A
-0.5
-2.5
mA
Collector-base breakdown voltage
V
(BR) CBO
I
C
= -1 mA, I
E
= 0 A
-100
V
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
= -10 mA, I
B
= 0 A
-80
V
h
FE (1)
V
CE
= -2 V, I
C
= -1 A
2000
DC current gain
h
FE (2)
V
CE
= -2 V, I
C
= -3 A
1000
Collector-emitter V
CE (sat)
I
C
= -3 A, I
B
= -6 mA
-1.5
Saturation voltage
Base-emitter V
BE (sat)
I
C
= -3 A, I
B
= -6 mA
-2.0
V
Transition frequency
f
T
V
CE
= -2 V, I
C
= -0.5 A
40 MHz
Collector output capacitance
C
ob
V
CB
= -10 V, I
E
= 0 A, f = 1 MHz
55 pF
Turn-on time
t
on
0.15
Storage time
t
stg
0.80
Switching time
Fall time
t
f
-I
B1
= I
B2
= 6 mA, duty cycle 1%
0.40
s
Emitter-Collector Diode Ratings and Characteristics
(Ta = 25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Forward current
I
FM
4 A
Surge current
I
FSM
t = 1 s, 1 shot
6 A
Forward voltage
V
F
I
F
= 1 A, I
B
= 0 A
2.0 V
Reverse recovery time
t
rr
1.0 s
Reverse recovery charge
Q
rr
I
F
= 4 A, V
BE
= 3 V, dI
F
/dt = -50 A/s
8 C
I
B1
V
CC
= -30 V
Output
10
I
B1
I
B2
Input
20 s
I
B2
MP4503
2002-11-20
4
Collector current I
C
(A)
h
FE
I
C
D
C
c
u
rr
en
t
g
a
i
n h
FE
Collector-emitter voltage V
CE
(V)
I
C
V
CE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Base-emitter voltage V
BE
(V)
I
C
V
BE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Base current I
B
(mA)
V
CE
I
B
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Collector current I
C
(A)
V
BE (sat)
I
C
B
a
se-
e
mi
tte
r sa
tu
rati
on v
o
l
t
age
V
BE (sat)
(V
)
Collector current I
C
(A)
V
CE (sat)
I
C
C
o
l
l
e
ct
or
-e
mi
tte
r s
a
tu
rati
on
vol
t
ag
e
V
CE (sat)
(V
)
300
0.05
0.1 0.3
0.5
1 3
5
10
500
1000
3000
5000
10000
20000
Common emitter
VCE = 2 V
25
Tc = 100C
-55
0.3 0.5
1
3 5
10
0.1
10
0.3
0.5
1
3
5
Common emitter
IC/IB = 500
25
Tc = -55C
100
0.3 0.5
1
3 5
10
0.1
10
0.3
0.5
1
3
5
Common emitter
IC/IB = 500
25
Tc = -55C
100
2
0
0.5
IB = 0.2 mA
0.23
0.3
5
0
1 2 3 4 5 6 7
1
0
6
5
4
3
1
Common
emitter
Tc = 25C
Common emitter
VCE = 2 V
0
0
2
0.4 0.8 1.2 1.6 2.0 2.4 2.8
1
6
5
4
3
25
Tc = 100C
-55
0
0.1
0.3 1
10 30
100
3 300
2.4
0.4
1.6
2.0
0.8
1.2
0.3
1
2
3
4
5
IC = 6 A
Common emitter
Tc = 25C
MP4503
2002-11-20
5
Collector-emitter voltage V
CE
(V)
I
C
V
CE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Base-emitter voltage V
BE
(V)
I
C
V
BE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Collector current I
C
(A)
h
FE
I
C
D
C
c
u
rr
en
t
g
a
i
n h
FE
Base current I
B
(mA)
V
CE
I
B
Co
lle
ct
o
r
-
e
m
i
tte
r
v
o
lt
a
g
e
V
CE
(V
)
Collector current I
C
(A)
V
BE (sat)
I
C
B
a
se-
e
mi
tte
r sa
tu
rati
on v
o
l
t
age
V
BE (sat)
(V
)
Collector current I
C
(A)
V
CE (sat)
I
C
C
o
l
l
e
ct
or
-e
mi
tte
r s
a
tu
rati
on
vol
t
ag
e
V
CE (sat)
(V
)
300
-0.05
-0.1
-0.3 -0.5
-1
-3
-5
-10
500
1000
3000
5000
10000
20000
Common emitter
VCE = -2 V
25
Tc = 100C
-55
0
-0.1
-0.3
-1
-10
-30
-100
-3
-300
-2.4
-0.4
-1.6
-2.0
-0.8
-1.2
Common emitter
Tc = 25C
-0.3
-1
-2
-3
-4
-5
IC = -6 A
-0.3 -0.5
-1
-3
-5
-10
-0.1
-10
-0.3
-0.5
-1
-3
-5
Common emitter
IC/IB = 500
25
Tc = -55C
100
-0.3 -0.5
-1
-3
-5
-10
-0.1
-0.3
-0.5
-1
-3
-5
Common emitter
IC/IB = 500
25
Tc = -55C
100
-2
0
-0.5
IB = -0.2 mA
-0.3
-0.4
-1.0
0
-1
-2
-3
-4
-5
-6
-7
-1
0
-6
-5
-4
-3
-0.7
-1.5
Common
emitter
Tc = 25C
Common emitter
VCE = -2 V
0
0
-2
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-1
-6
-5
-3
25
Tc = 100C
-55
-4
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