MT3S35T
1 2002-08-19
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
MT3S35T
VCO OSCILLETOR STAGE
UHF LOW NOISE AMPLIFIER APPLICATION
FEATURES
Low Noise Figure :NF=1.4dB (@f=2GHz)
High Gain:|S21e|
2
=13.0dB (@f=2GHz)
Marking
Maximum Ratings
(Ta = 25C)
Characteristics Symbol
Rating
Unit
Collector-Base voltage
V
CBO
8 V
Collector-Emitter voltage
V
CEO
4.5 V
Emitter-Base voltage
V
EBO
1.5
V
Collector-Current I
C
24
mA
Base-Current I
B
12
mA
Collector Power dissipation
P
C
100
mW
Junction temperature
T
j
150
C
Storage temperature Range
T
stg
-55~150 C
Unit: mm
TESM
JEDEC
JEITA
TOSHIBA 2-1B1A
Weight:0.0022g (typ.)
3
1
2
Q 2
MT3S35T
2 2002-08-19
Microwave Characteristics
(Ta = 25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Transition Frequency
fT
V
CE
=3V, I
C
=10mA, f=2GHz
16
20
-
GHz
|S21e|
2
(1) V
CE
=3V, I
C
=10mA, f=1GHz
16
18
-
dB
Insertion Gain
|S21e|
2
(2) V
CE
=3V, I
C
=10mA, f=2GHz
11
13
-
dB
NF(1) V
CE
=3V, I
C
=2mA, f=1GHz
-
1.1
-
dB
Noise Figure
NF(2) V
CE
=3V, I
C
=2mA, f=2GHz
-
1.4
1.9
dB
Electrical Characteristics
(Ta = 25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Collector Cut-off Current
I
CBO
V
CB
=8V, I
E
=0 -
-
1
A
Emitter Cut-off Current
I
EBO
V
EB
=1V, I
C
=0 -
-
1
A
DC Current Gain
hFE
V
CE
=3V, I
C
=10mA 70
-
140
-
Output Capacitance
C
ob
V
CB
=1V, I
E
=0, f=1MHz
-
0.46
0.75
pF
Reverse Transistor Capacitance
C
re
V
CB
=1V, I
E
=0, f=1MHz (Note 1)
-
0.21
0.4
pF
Note 1:
Cre is measured by 3 terminal method with capacitance bridge.
Caution:
This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
MT3S35T
4 2002-08-19
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under any
intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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