RN1001
~RN1006
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1001,RN1002,RN1003
RN1004,RN1005,RN1006
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2001~RN2006
Equivalent Circuit and Bias Resister Values
Type No.
R1 (k) R2
(k)
RN1001 4.7
4.7
RN1002 10
10
RN1003 22
22
RN1004 47
47
RN1005 2.2
47
RN1006 4.7
47
Maximum Ratings
(Ta = 25C)
Characteristic Symbol
Rating
Unit
Collector-base voltage
V
CBO
50 V
Collector-emitter voltage
RN1001~1006
V
CEO
50 V
RN1001~1004 10
Emitter-base voltage
RN1005, 1006
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
400
mW
Junction temperature
T
j
150
C
Storage temperature range
RN1001~1006
T
stg
-55~150
C
JEDEC TO-92
EIAJ SC-43
TOSHIBA 2-5F1B
Weight: 0.21g
Unit: mm
RN1001
~RN1006
2001-06-07
2
Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
V
CB
= 50V, I
E
= 0
100
Collector cut-off
current
RN1001~1006
I
CEO
V
CE
= 50V, I
B
= 0
500
nA
RN1001 0.82
1.52
RN1002 0.38
0.71
RN1003 0.17
0.33
RN1004
V
EB
= 10V, I
C
= 0
0.082
0.15
RN1005 0.078
0.145
Emitter cut-off current
RN1006
I
EBO
V
EB
= 5V, I
C
= 0
0.074
0.138
mA
RN1001 30
RN1002 50
RN1003 70
RN1004 80
RN1005 80
DC current gain
RN1006
h
FE
V
CE
= 5V, I
C
= 10mA
80
Collector-emitter
saturation voltage
RN1001~1006 V
CE (sat)
I
C
= 5mA, I
B
= 0.25mA
0.1 0.3 V
RN1001
1.1
2.0
RN1002
1.2
2.4
RN1003
1.3
3.0
RN1004
1.5
5.0
RN1005
0.6
1.1
Input voltage (ON)
RN1006
V
I (ON)
V
CE
= 0.2V, I
C
= 5mA
0.7
1.3
V
RN1001~1004
1.0
1.5
Input voltage (OFF)
RN1005, 1006
V
I (OFF)
V
CE
= 5V, I
C
= 0.1mA
0.5
0.8
V
Transition frequency
RN1001~1006
f
T
V
CE
= 10V, I
C
= 5mA
250
MH
z
Collector Output
capacitance
RN1001~1006 C
ob
V
CB
= 10V, I
E
= 0,
f = 1MH
z
3 6
pF
RN1001
3.29 4.7 6.11
RN1002
7 10 13
RN1003
15.4 22 28.6
RN1004
32.9 47 61.1
RN1005
1.54 2.2 2.86
Input resistor
RN1006
R1
3.29 4.7 6.11
k
RN1001~1004
0.9 1.0 1.1
RN1005
0.0421 0.0468 0.0515
Resistor ratio
RN1006
R1/R2
0.09 0.1 0.11
RN1001
~RN1006
2001-06-07
6
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
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document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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