S6370
2000-12-01 1/5
TOSHIBA THYRISTOR SILICON PLANAR TYPE
S6370
LOW POWER SWITCHING APPLICATIONS
(STROBE TRIGGER)
l Repetitive Peak Off-State Voltage : V
DRM
= 400V
l Repetitive Peak Reverse Voltage
: V
RRM
= 400V
l Fast Turn On Time
: t
gt
= 1.5s
l Plastic Mold Package (TO-92)
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL
RATING
UNIT
Repetitive Peak Off-State Voltage
and Repetitive Peak Reverse Voltage
(R
GK
=1k
W)
V
DRM
V
RRM
400 V
Non-Repetitive Peak Reverse
Voltage (Non-rep<5ms, R
GK
=1k,
T
j
=0~125C)
V
RSM
450 V
Average On-State Current
(Half Sine Waveform Ta=45C)
I
T (AV)
300 mA
R.M.S. On-State Current
I
T (RMS)
450 mW
9 (50Hz)
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I
TSM
9.9 (60Hz)
A
Peak Gate Power Dissipation
P
GM
0.1 W
Average Gate Power Dissipation
P
G (AV)
0.01 W
Peak Reverse Gate Voltage
V
RGM
-5 V
Peak Forward Gate Current
I
GM
125
mA
Junction Temperature
T
j
-40~125 C
Storage Temperature Range
T
stg
-40~125 C
Note : Use with gate resistance by all means
JEDEC TO-92
EIAJ SC-43
TOSHIBA
13-5A1A
Weight : 0.2 g
Unit in mm
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling
Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer's own risk.
000707EAA2
S6370
2000-12-01 2/5
ELECTRICAL CHARACTERISTICS
(Ta = 25
C
)
CHARACTERISTIC SYMBOL
TEST
CONDITION
MIN.
TYP.
MAX.
UNIT
Repetitive Peak Off-State Current and
Repetitive Peak Reverse Current
I
DRM
I
RRM
V
DRM
= V
RRM
= 400V
R
GK
= 1k
W
10
mA
Peak On-State Voltage
V
TM
I
TM
= 2A
2.0 V
Gate Trigger Voltage
V
GT
0.8 V
Gate Trigger Current
I
GT
V
D
= 6V, R
L
= 100
W, R
GK
= 1k
200
mA
Turn On Time
t
gt
V
D
= 400V, i
G
= 5mA
1.5
ms
Gate Non-Trigger Voltage
V
GD
V
D
= 6V, R
GK
= 1k 0.2
V
Holding Current
I
H
R
L
= 100, R
GK
= 1k
4
mA
Thermal Resistance
R
th (j-a)
Junction to Ambient
250
C
/
W
MARKING
NUMBER SYMBOL
MARK
*1 TYPE
S6370
S6370
*2
Example
8A
:
January
1998
8B : February 1998
8L : December 1998
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
000707EAA2
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