S6785G
2001-07-10
1
TOSHIBA HIGH SPEED THYRISTOR SILICON PLANAR TYPE
S6785G
HIGH SPEED SWITCHING AND CONTROL
APPLICATIONS
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL
RATING
UNIT
Repetitive Peak Off-State Voltage
and Repetitive Peak Reverse Voltage
V
DRM
V
RRM
400 V
Non-Repetitive Peak Reverse
Voltage (Non-Repetitive <5ms,
T
j
= 0~125C)
V
RSM
500 V
Average On-State Current
(Half Sine Waveform)
I
T (AV)
3 A
R.M.S On-State Current
I
T (RMS)
4.7 A
60 (50Hz)
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I
TSM
66 (60Hz)
A
I
2
t Limit Value
I
2
t 18
A
2
s
Peak Gate Power Dissipation
P
GM
5 W
Average Gate Power Dissipation
P
G (AV)
0.5 W
Peak Forward Gate Voltage
V
FGM
10 V
Peak Reverse Gate Voltage
V
RGM
-6 V
Peak Forward Gate Current
I
GM
2 A
Junction Temperature
T
j
-40~125 C
Storage Temperature Range
T
stg
-40~125 C
Unit: mm
JEDEC
JEITA
TOSHIBA 13-10H1B
Weight: 1.7 g
S6785G
2001-07-10
2
ELECTRICAL CHARACTERISTICS
(Ta = 25C)
CHARACTERISTIC SYMBOL TEST
CONDITION MIN.
MAX.
UNIT
I
DRM
1.0
Repetitive Peak Off-State Current and
Repetitive Peak Reverse Current
I
RRM
V
DRM
=VRRM = Rated, T
j
= 125C
2.0
mA
Peak On-State Voltage
V
TM
I
TM
= 20A
2.0 V
Gate Trigger Voltage
V
GT
1.5 V
Gate Trigger Current
I
GT
V
D
= 6V, R
L
= 10
25.0
mA
Gate Non-Trigger Voltage
V
GD
0.2
V
Gate Non-Trigger Current
I
GD
V
D
= Rated, Tc = 100C
0.2
mA
Turn-On Time
t
gt
V
D
= Rated, I
TM
= 3A, I
G
= 120mA, t
gr
< 1s
3.0 s
Turn-Off Time
t
q
V
D
= Rated, I
TM
= 20A, V
G
= - 2.5V,
dv / dt 100V / s, Tc = 90C
3.5 s
Critical Rate of Rise of Off-State Voltage
dv / dt
V
D
= Rated, R
GK
= 100, V
G
= -2.5V,
Tc = 125C, Exponential Rise
100
V
/
s
Holding Current
I
H
R
L
= 10
80.0
mA
Thermal Resistance
R
th (j-c)
Junction
to
Case,
DC
4.0
C
/
W
MARKING
NUMBER SYMBOL
MARK
*1 TYPE S6785G
S6785G
*2
Example
8A
:
January
1998
8B : February 1998
8L : December 1998
S6785G
2001-07-10
4
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
PDF 
ZIP