S6992
2002-01-23
1
TOSHIBA Thyristor Silicon Planar Type
S6992
Condenser Discharge Control Applications
Critical rate of rise of ON-state current: di/dt = 750 A/s
Repetitive surge ON-state current: I
TRM
= 500 A (t
w
= 2 s)
Repetitive peak OFF-state voltage: V
DRM
= 800 V
Gate trigger current: I
GT
= 20 mA max.
Maximum Ratings
Characteristics Symbol
Rating
Unit
Repetitive peak OFF-state voltage
V
DRM
800 V
Repetitive peak surge ON-state
current (Note)
I
TRM
500 A
Critical rate of rise of ON-state current
(Note)
di/dt 750
A/
ms
Peak gate power dissipation
P
GM
5 W
Average gate power dissipation
P
G (AV)
0.5
W
Peak forward gate voltage
V
FGM
10
V
Peak reverse gate voltage
V
RGM
-5
V
Peak forward gate current
I
GM
2
A
Junction temperature
T
j
-40~125 C
Storage temperature range
T
stg
-40~150 C
Note: V
D
<
= 0.8 rated, Tc = 85C, i
gp
>
= 40 mA, t
gw
>
= 10
m
s, t
gr
<
= 150 ns
Marking
*: There is no reverse-blocking (reverse voltage) ability.
Unit: mm
JEDEC
JEITA
TOSHIBA 13-10J1B
Weight: 1.5 g (typ.)
2
1
1 TYPE
NAME S6992
MARK S6992
2
Lot Number
Example
8A: January 1998
8B: February 1998
8L: December 1998
Month (starting from alphabet A)
Year last decimal digit of the
current year
S6992
2002-01-23
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Repetitive peak OFF-state current
I
DRM
V
DRM
= rated
10 mA
Peak ON-state voltage
V
TM
I
TM
= 25 A
1.5 V
Gate trigger voltage
V
GT
1.0 V
Gate trigger current
I
GT
V
D
= 6 V, R
L
= 10 W
20 mA
Gate non-trigger voltage
V
GD
V
D
= rated, Tc = 125C
0.2
V
Critical rate of rise of OFF-state voltage
dv/dt
V
DRM
= rated, Tc = 125C
Exponential rise
50 V/ms
Holding current
I
H
V
D
= 6 V, I
TM
= 1 A
40 mA
Thermal resistance
R
th (j-a)
Junction
to
ambient
70
C/W
0.5 I
P
t
w
= 2 ms
t
I
P
0.5 I
P
di/dt
=
t
t
w
~
- p
LC
, I
P
~
-
L/C
V
D
Test Circuit Examples
C
R L
V
D
S
6992
S6992
2002-01-23
3
Instantan
eo
us O
N
-s
t
a
t
e
cu
rr
ent
i
T
(A
)
i
GT(tw)
/I
GT
Case temperature Tc (C)
I
GT
(Tc)/I
GT
(Tc
= 25C) Tc
(typical)
I
GT
(T
c
)
/I
GT
(T
c
=
25
C
)
Case temperature Tc (C)
V
GT
(Tc)/V
GT
(Tc
= 25C) Tc
(typical)
V
GT
(T
c
)
/V
GT
(T
c
=
25
C
)
Case temperature Tc (C)
I
H
(Tc)/I
H
(Tc
= 25C) Tc
(typical)
I
H
(T
c
)
/I
H
(T
c
=
25
C
)
Gate trigger pulse width t
w
(
ms)
Pulse trigger characteristics
(typical)
Instantaneous ON-state voltage v
T
(V)
i
T
v
T
0.0
-60
2.5
2.0
1.5
1.0
0.5
140
100
60
20
-20
VD = 6 V
RL = 10 W
2.0
0.0
-60 140
100
60
20
-20
0.5
1.0
1.5
VD = 6 V
RL = 10 W
0.0
2.0
1.5
1.0
0.5
-60 140
100
60
20
-20
VD = 6 V
ITM = 1 A
5
0
0.1
1 10 100
1000
1
2
3
4
Resistance load
VD = 6 V
RL = 10 W
Tc
= 25C
Rectangular waveform
tw
iGT
1
0.0
1000
100
10
1.0 2.0 3.0 4.0
25C
Tj
= 125C
S6992
2002-01-23
4
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
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000707EAA
RESTRICTIONS ON PRODUCT USE
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