SSM6K06FU
2003-03-28
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K06FU
High Speed Switching Applications
Small package
Low on resistance : R
on
= 160 m max (@V
GS
= 4 V)
:
R
on
= 210 m max (@V
GS
= 2.5 V)
Low gate threshold voltage
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DS
20 V
Gate-source voltage
V
GSS
12 V
DC I
D
1.1
Drain current
Pulse I
DP
2.2
A
Drain power dissipation (Ta
= 25C)
P
D
(Note 1)
300 mW
Channel temperature
T
ch
150 C
Storage temperature range
T
stg
-55~150 C
Note 1: Mounted on FR4 board.
(25.4
mm
25.4 mm 1.6 t, Cu pad: 0.32 mm
2
6) Figure 1.
Marking
Equivalent
Circuit
(top view)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-2J1D
Weight: 6.8 mg (typ.)
SSM6K06FU
2003-03-28
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 12 V, V
DS
= 0
1
mA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 1 mA, V
GS
= 0
20
V
Drain cut-off current
I
DSS
V
DS
= 20 V, V
GS
= 0
1 mA
Gate threshold voltage
V
th
V
DS
= 3 V, I
D
= 0.1 mA
0.6
1.1 V
Forward transfer admittance
Y
fs
V
DS
= 3 V, I
D
= 0.5 A
(Note 2)
1.2
S
I
D
= 0.5 A, V
GS
= 4 V
(Note 2)
120 160
Drain-source ON resistance
R
DS (ON)
I
D
= 0.5 A, V
GS
= 2.5 V
(Note 2)
160 210
m
W
Input capacitance
C
iss
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
125
pF
Reverse transfer capacitance
C
rss
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
30
pF
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
75
pF
Turn-on time
t
on
42
Switching time
Turn-off time
t
off
V
DD
= 10 V, I
D
= 0.5 A, V
GS
= 0~2.5 V,
R
G
= 4.7 W
100
ns
Note 2: Pulse test
Switching Time Test Circuit
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I
D
=
100 mA for this
product. For normal switching operation, V
GS (on)
requires higher voltage than V
th
and V
GS (off)
requires lower
voltage than V
th
.
(Relationship can be established as follows: V
GS (off)
< V
th
< V
GS (on)
)
Please take this into consideration for using the device.
V
GS
recommended voltage of 2.5 V or higher to turn on this product.
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