TA2157F/FN
2002-11-21
1
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA2157F,TA2157FN
Digital Servo Head Amp for CD System
TA2157F/FN is a digital servo head amp for a 3-beam pickup
used in CD systems.
Gain for RF signal generation amp can be freely set, supporting
CD-RW.
Combining with single-chip processor TC94A14F/FA/FB, a
CMOS digital servo, makes configuring CD systems simple.
Features
Low power dissipation digital servo head amp
Built-in amplifier for generating reference voltage (VRO)
Built-in auto laser power control (APC) amplifier
Built-in RF amplifier
Built-in RF signal automatic gain control (AGC) amplifier
Built-in gain change circuit for CD-RW
Built-in focus error and tracking error signal amplifiers
Built-in track count signal amplifier
Normal-, double-, and 4-speed operation
24-pin mini flat package
TA2157F
TA2157FN
Weight
SSOP24-P-300-1.00: 0.3 g (typ.)
SSOP24-P-300-0.65A: 0.17 g (typ.)
TA2157F/FN
2002-11-21
2
Block Diagram
PIN
V
CTRL
SEL
(APC SW)
TEB
(TE BAL)
RFGC
(AGC Gain)
GVSW
V
CC
APC
ON
-
50%
+
12dB
Normal mode
(0dB)
HiZ APC
ON 0%
+
6dB
Normal mode
(0dB)
GND
APC OFF
(LDO
=
H)
+
50% 0dB
CD-RW mode
(
+
12dB)
94 k
W
20 k
W
20 k
W
15 k
W
10 pF
20 k
W
12 k
W
12 k
W
20 k
W
40 k
W
3 k
W
3 k
W
50 k
W
40 k
W
20 k
W
20 k
W
40 k
W
20 k
W
10 pF
1.
3 V
2 k
W
50 k
W
2 k
W
1 k
W
14 k
W
240 k
W
15 pF
13
14
15
16
17
18
19
20
21
22
23
24
12
11
10
9
8
7
6
5
4
2
1
15 k
W
k
0.5
2
22 k
W
22 k
W
BOTTOM
PEAK
3
GVSW
VRO
FEO
FEN
RFRP
RFRPIN
RFGO
RFGC
AGCIN
RFO
RFN
GND
RFDC
TEO
V
CC
TEN
TEBC
SEL
LDO
MDI
TNI
TPI
FPI
FNI
240 k
W
15 pF
180 k
W
40 pF
180 k
W
40 pF
60 k
W
60 k
W
94 k
W
PEAK
40
m
A
1.75 k
W
50
m
A
1
0.5
2
AGC Amp.
TA2157F/FN
2002-11-21
3
Pin Function
Pin
No.
Symbol I/O
Function
Description
Internal
Circuit
1 V
CC
3.3 V power supply pin
2
FNI
I
Main-beam amp input pin
3
FPI
I
Main-beam amp input pin
4
TPI
I
Sub-beam amp input pin
5
TNI
I
Sub-beam amp input pin
6
MDI
I
Monitor photo diode amp input pin
7
LDO
O Laser diode amp output pin
8 SEL I
APC circuit ON/OFF control signal, laser diode
(LDO) control signal input or bottom/peak
detection frequency change pin.
SEL
APC
Circuit
LDO
GND OFF Connected to V
CC
through 1 k
W
resistor
HiZ
ON Control
signal
output
V
CC
ON Control
signal
output
2
3
22 k
W
1 k
W
120
m
A
VC
4
5
100
W
2
m
A
2
m
A
2
m
A
VC
6
1.75 k
W
4
m
A
14 k
W
2 k
W
20
m
A
4
m
A
7
1 k
W
50 k
W
ON/OFF
ON: LD-OFF
OFF: LD-ON
8
30 k
W
80
m
A
30 k
W
40 k
W
50 k
W
40 k
W
TA2157F/FN
2002-11-21
4
Pin
No.
Symbol I/O
Function
Description
Internal
Circuit
9 TEBC I
Tracking error balance adjustment signal input pin
Adjusts TE signal balance by eliminating
carrier component from PWM signal (3-state
output, PWM carrier
=
88.2 kHz) output from
TC94A14F/FA/FB TEBC pin using RC-LPF and
inputting DC.
TEBC input voltage: GND~V
CC
10 TEN I
Tracking error signal generation amp
negative-phase input pin
11 TEO O
Tracking error signal generation amp output pin.
Combining TEO signal and RFRP signal with
TC94A14F/FA/FB configures tracking search
system.
12
RFDC
O RF signal peak detection output pin
13 GVSW I
AGC/FE/TE amp gain change pin
GVSW Mode
GND CD-RW
HiZ
V
CC
Normal
9
15 k
W
40 k
W
40 k
W
11
10
20 k
W
167
W
20
m
A
VC
167
W
40
m
A
10 pF
VC
12
15 k
W
500
W
20
m
A
400
m
A
50 k
W
40
m
A
13
30 k
W
60
m
A
30 k
W
40 k
W
50 k
W
40 k
W
TA2157F/FN
2002-11-21
5
Pin
No.
Symbol I/O
Function
Description
Internal
Circuit
14 VRO O
Reference voltage (VRO) output pin
VRO
=
1/2 V
CC
when V
CC
=
3.3 V
15
FEO
O Focus error signal generation amp output pin
16 FEN I
Focus error signal generation amp
negative-phase input pin
17 RFRP O
Signal amp output pin for track count
Combining RFRP signal and TEO signal with
TC94A14F/FA/FB configures tracking search
system.
18
RFRPIN
I
Signal generation amp input pin for track count
14
10 k
W
20
W
20
W
16
15
15 k
W
167
W
20
m
A
VC
167
W
40
m
A
10 pF
17
20 k
W
333
W
400
m
A
3 pF
18
1 k
W
1
m
A
1
m
A
40 k
W
VC
33 pF
33 pF
1.
5
m
A
1.
5
m
A
TA2157F/FN
2002-11-21
6
Pin
No.
Symbol I/O
Function
Description
Internal
Circuit
19
RFGO
O RF signal amplitude adjustment amp output pin
20 RFGC I
RF amplitude adjustment control signal input pin
Adjusts RF signal amplitude by eliminating
carrier component from PWM signal (3-state
output, PWM carrier
=
88.2 kHz) output from
TC94A14F/FA/FB RFGC pin using RC-LPF and
inputting DC.
RFGC input voltage : GND~V
CC
21
AGCIN
I
RF signal amplitude adjustment amp input pin
22
RFO
O RF signal generation amp output pin
23
RFN
I
RF signal generation amp input pin
24 GND
GND
pin
240
m
A
19
20 k
W
300
W
1.
6 m
A
0.2 pF
1.
2 V
VC
20
40 k
W
20 k
W
20 k
W
40
m
A
21
15 k
W
15 k
W
60
m
A
VC
20 k
W
60
m
A
15 k
W
100
m
A
100
m
A
22
300
W
1.
2 m
A
240
m
A
23
120
W
VC
3 k
W
3 k
W
TA2157F/FN
2002-11-21
7
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Supply voltage
V
CC
5 V
TA2157F 600
Power dissipation
TA2157FN
P
D
500
mW
Operating temperature
T
opr
-
40 ~
+
85 C
Storage temperature
T
stg
-
55 ~
+
150 C
Note 1: TA2157F: Derated above 25
C in the proportion 4.76 mW/
C.
TA2157FN: Derated above 25
C in the proportion 4 mW/
C.
Electrical Characteristics
(unless otherwise specified, V
CC
=
=
=
=
3.3 V, VRO
=
=
=
=
1.65 V, Ta
=
=
=
=
25
C,
RFGC
=
=
=
=
VRO, GVSW
=
=
=
=
V
CC
)
Characteristics Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Assured power supply
voltage
V
CC
3.0 3.3 3.6 V
Power supply current
(normal mode)
I
CC
1 GVSW
=
V
CC
13 19 25
Power
supply
Power supply current
(CD-RW mode)
I
CC
2
SEL
=
HiZ
TEBC
=
HiZ
RFGC
=
HiZ
GVSW
=
GND
12 18 24
mA
Reference voltage
VRO
When V
CC
=
3.3
V
1.55 1.65 1.75
V
Output current
I
OH
D
V
=
-
0.1 V
3
Reference
voltage
Input current
I
OL
D
V
=
+
0.1 V
3
mA
Voltage gain
G
VAPC
f
=
1 kHz
200
V/V
Operating reference
voltage
V
MDI
V
LDO
=
V
CC
-
1.3
V
170 178 186
mV
LD off voltage
V
LDOP
V
CC
reference, SEL
=
GND
-
0.75
-
0.7
V
APC
MD
LDO
Input bias current
I
IAPC
V
MDI
=
178 mV
-
200
-
50 0 nA
Transfer resistance 1
(normal mode)
Rt1RF GVSW
=
V
CC
74 85 95
Transfer resistance 2
(CD-RW mode)
Rt2RF
f
=
100 kHz
Rf
=
12 k
W
GVSW
=
GND
325 370 414
k
W
Frequency characteristic 1
(normal mode)
f
C1RF
GVSW
=
V
CC
13
Frequency characteristic 2
(CD-RW mode)
f
C2RF
-
3dB point
Rf
=
12 k
W
GVSW
=
GND
8
MHz
Output slew rate
SR
RF
C
RFO
=
20 pF
35
V/
m
s
Upper limit output voltage
V
OHRF
2.2
2.4
Lower limit output voltage
V
OLRF
GND reference
0.2 0.4
V
RF
FPI (FNI)
RFO
Permissive load resistance
R
LMRF
5
10
k
W
TA2157F/FN
2002-11-21
8
Characteristics Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Voltage gain 1
G
V1AG
RFGC
=
GND
-
1.5
-
0.5 0.5
Voltage gain 2
G
V2AG
RFGC
=
HiZ 5.5 6.5 7.5
Voltage gain 3
G
V3AG
f
=
1 MHz
RFGC
=
V
CC
12 13.5 15
dB
Frequency characteristic 1
f
C1AG
RFGC
=
GND
15
Frequency characteristic 2
f
C2AG
RFGC
=
HiZ
15
Frequency characteristic 3
f
C3AG
-
3dB point
RFGC
=
V
CC
15
MHz
Output slew rate
SR
AG
C
RFO
=
20 pF
25
V/
m
s
Upper limit output voltage
V
OHAG
2.2
2.4
Lower limit output voltage
V
OLAG
GND reference
0.2 0.4
V
AGC
AGCI
RFGO
Permissive load resistance
R
LMAG
5
10
k
W
Transfer resistance 1
(normal mode)
Rt1FE GVSW
=
V
CC
127 145 162
Transfer resistance 2
(CD-RW mode)
Rt2FE
f
=
1 kHz
R
FIN
=
47 k
W
R
FEFB
=
33 k
W
GVSW
=
GND
545 620 694
k
W
Gain balance
1
(normal mode)
GB1FE GVSW
=
V
CC
,
D
Rt1FE
-
1 0
+
1
Gain balance
2
(CD-RW mode)
GB2FE
GVSW
=
GND,
D
Rt2FE
-
1 0
+
1
dB
Frequency characteristic 1
(normal mode)
f
C1FE
GVSW
=
V
CC
20
Frequency characteristic 2
(CD-RW mode)
f
C2FE
-
3dB point
R
FEFB
=
33 k
W
GVSW
=
GND
20
kHz
Output offset voltage 1
(normal mode)
V
OS1FE
GVSW
=
V
CC
-
50 0
+
50
Output offset voltage 2
(CD-RW mode)
V
OS2FE
VRO reference
FPI/FNI open
GVSW
=
GND
-
100 0
+
100
mV
Upper limit output voltage
V
OHFE
2.9
3.1
Lower limit output voltage
V
OLFE
GND reference
0.1 0.3
V
FE
FPI (FNI)
FEO
Permissive load resistance
R
LMFE
5
10
k
W
TA2157F/FN
2002-11-21
9
Characteristics Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Transfer resistance 1
(normal mode)
Rt1TE GVSW
=
V
CC
411 468 525
Transfer resistance 2
(CD-RW mode)
Rt2TE
f
=
1 kHz
TE
RFB
=
39 k
W
R
TIN
=
47 k
W
TEBC
=
HiZ
GVSW
=
GND
1647 1872 2092
k
W
H (DA)
D
Rt1
TEBC
=
GND
+
40
+
50
+
60
Gain balance
adjustment
width
L (DA)
D
Rt2
GVSW
=
V
CC
TEBC
=
V
CC
-
60
-
50
-
40
%
Gain balance 1
(normal mode)
GB1TE GVSW
=
V
CC
,
D
Rt1FE
-
1 0
+
1
Gain balance 2
(CD-RW mode)
GB2TE
GVSW
=
GND,
D
Rt2FE
-
1 0
+
1
dB
Frequency characteristic 1
(normal mode)
f
C1TE
GVSW
=
V
CC
40
Frequency characteristic 2
(CD-RW mode)
f
C2TE
-
3dB point
R
TEFB
=
39 k
W
GVSW
=
GND
40
kHz
Output offset voltage 1
(normal mode)
V
OS1TE
GVSW
=
V
CC
-
50 0
+
50
Output offset voltage 2
(CD-RW mode)
V
OS2TE
VRO reference
TPI/TNI open
GVSW
=
GND
-
150 0
+
150
mV
Upper limit output voltage
V
OHTE
2.9
3.1
Lower limit output voltage
V
OLTE
GND reference
0.1 0.3
V
TE
TPI (TNI)
TEO
Permissive load resistance
R
LMTE
5
10
k
W
Detection frequency
f
CDC
-
3dB point at low-frequency
with output amplitude
=
0dB
when RFO
=
1.2 Vpp/350 kHz
in relation to V
OP1DC
15
kHz
Operating reference
voltage 1
V
OP1DC
FNI/FPI open,
VRO reference,
RFN-Vcc
=
47 k
W
-
0.15 0 0.15
Operating reference
voltage 2
V
OP2DC
VRO reference,
RFO
=
1.2 Vpp/350 kHz
RFN-Vcc
=
47 k
W
0.6 0.75 0.9
V
Upper limit output voltage
V
OHDC
2.9
3.1
Lower limit output voltage
V
OLDC
GND reference
0.3 0.5
V
RFDC
FNI (FPI)
RFDC
Permissive load resistance
R
LMDC
5
10
k
W
Voltage gain
G
VRP
AMP gain after detection
4.4
dB
Detection frequency
f
CRP
-
3dB point at low-frequency
with output amplitude
=
0dB
when RFO
=
1.2 Vpp/700 kHz
in relation to V
OP1RP
35
kHz
Detection time constant
T
RP
1.2 V
PP
/5 kHz square wave
(Cin
>
1
m
F)
37
V/ms
Operating reference
voltage 1
V
OP1RP
VRO reference, no input
-
1.0
-
0.85
-
0.7
Operating reference
voltage 2
V
OP2RP
VRO reference,
RFO
=
700 kHz, 1.2 Vpp
0.7 0.85 1.0
V
Upper limit output voltage
V
OHRP
GND reference
2.9
3.1
V
RFRP
RFRPIN
RFRP
Permissive load resistance
R
LMRP
5
10
k
W
Note 2: (DA) : Normal mode
Note 3: If the IC is used abnormally (ex, wrongly mounted), it may be damaged or destroyed.
TA2157F/FN
2002-11-21
10
Test Methods
(supplementary)
Note: Due to the relation with RFRP detection frequency, use feed search (track cross speed) at 80 kHz or less.
1. Test method for RFRP detection frequency characteristic and detection time constant
(1) Detection
frequency
Set to 0dB the maximum output amplitude of the RFRP pin in relation to the operating reference
voltage 1 (V
OP1RP
) when the sine wave shown in the figure below is input via a capacitor (Cin > 1 mF)
to the RFRPIN pin and specify a frequency whose amplitude is -3dB.
(2) Detection time constant
Specify the time constant for peak and bottom detection frequencies when the square wave shown
in the figure below is input via a capacitor (Cin > 1 mF) to the RFRPIN pin at the slew rate of the
RFRP pin output sawtooth wave.
RFRPIN input: 1.2 Vpp
f
=
5 kHz (SEL
=
HiZ or V
CC
)
RFRP output
Specify by slew rate here
37 V/ms (SEL
=
HiZ or V
CC
)
RFRPIN input: 1.2 Vpp
RFRP output amplitude: [V]
Operating reference voltage 1 (V
OP1RP
)
35
Specify by amplitude
equivalent to
-
3dB
Set this amplitude
to 0dB
RFRPIN input frequency [kHz]
Detection frequency
TA2157F/FN
2002-11-21
11
Test Circuit
94 k
W
20 k
W
20 k
W
15 k
W
10 pF
20 k
W
50
m
A
12 k
W
12 k
W
20 k
W
40 k
W
3 k
W
3 k
W
50 k
W
40 k
W
20 k
W
20 k
W
40 k
W
20 k
W
10 pF
1.
3 V
2 k
W
50 k
W
2 k
W
1 k
W
14 k
W
240 k
W
15 pF
13
14
15
16
17
18
19
20
21
22
23
24
12
11
10
9
8
7
6
5
4
2
1
15 k
W
22 k
W
P
D
A
E
F
B
C
D
LD
VC
22 k
W
BOTTOM
PEAK
3
GVSW
VRO
FEO
FEN
RFRP
RFRPIN
RFGO
RFGC
AGCIN
RFO
RFN
GND
RFDC
TEO
V
CC
TEN
TEBC
SEL
LDO
MDI
TNI
TPI
FPI
FNI
V
REF
/PV
REF
FEI
RFRP/RFZI
RFI
RFGC
TEI/TEZI
TEBC
SEL
240 k
W
15 pF
180 k
W
40 pF
180 k
W
40 pF
60 k
W
60 k
W
94 k
W
10
W
39 k
W
10
m
H
100
m
F
47 k
W
47 k
W
47 k
W
47 k
W
47 k
W
47 k
W
33 k
W
0.
1
m
F
0.
1
m
F
12 k
W
47 k
W
PEAK
40
m
A
1.75 k
W
k
0.5
2
1
0.5
2
AGC Amp.
TA2157F/FN
2002-11-21
12
Package Dimensions
Weight: 0.3 g (typ.)
TA2157F/FN
2002-11-21
13
Package Dimensions
Weight: 0.17 g (typ.)
TA2157F/FN
2002-11-21
14
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
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The information contained herein is subject to change without notice.
000707EBA
RESTRICTIONS ON PRODUCT USE
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