TD62783,784AP/AFW
2001-07-05
1
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
TD62783AP,TD62783AFW,TD62784AP,TD62784AFW
(Manufactured by Toshiba Malaysia)
8CH HIGH-VOLTAGE SOURCE DRIVER
The TD62783AP / AFW Series are comprised of eight source
current Transistor Array.
These drivers are specifically designed for fluorescent display
applications.
Applications include relay, hammer and lamp drivers.
FEATURES
l High output voltage
Type-AP, AFW : V
CC
= 50 V MIN.
Type-F :
V
CC
= 35 V MIN.
l Output current (single output) I
OUT
= -500 mA MIN.
l Output clamp diodes
l Single supply voltage
l Input compatible with various types of logic
l Package Type-AP :
DIP-18 pin
l Package Type-AFW : SOL-18 pin
TYPE DESIGNATION
TD62783AP / AFW
TTL, 5 V CMOS
TD62784AP / AFW
6~15 V PMOS, CMOS
PIN CONNECTION
(TOP VIEW)
SCHEMATICS
(EACH DRIVER)
Note:
The input and output parasitic diodes cannot
be used as clamp diodes.
Weight
DIP18-P-300-2.54F : 1.478 g (Typ.)
SOL18-P-300-1.27 : 0.48 g (Typ.)
TD62783,784AP/AFW
2001-07-05
2
MAXIMUM RATINGS
(Ta = 25C)
CHARACTERISTIC SYMBOL
RATING
UNIT
Supply Voltage
V
CC
50 V
Output Current
I
OUT
-500
mA / ch
V
IN
(Note 1)
15
Input Voltage
V
IN
(Note 2)
30
V
Clamp Diode Reverse Voltage
V
R
50 V
Clamp Diode Forward Current
I
F
500 mA
AP 1.47
Power Dissipation
AFW
P
D
0.92 / 1.31 (Note 3)
W
Operating Temperature
T
opr
-40~85 C
Storage Temperature
T
stg
-55~150 C
Note 1: Only TD62783AP / AFW
Note 2: Only TD62784AP / AFW
Note 3: On Glass Epoxy PCB (75 114 1.6 mm Cu 20%)
RECOMMENDED OPERATING CONDITIONS
(Ta = -40~85C)
CHARACTERISTIC SYMBOL
TEST
CONDITION
MIN
TYP.
MAX
UNIT
Supply Voltage
V
CC
50 V
Duty = 10% 8Circuits
-260
Duty = 50% 8Circuits
-59
Output Current
Duty = 10% 8Circuits
-180
AFW
I
OUT
Ta = 85C
T
j
= 120C
T
pw
= 25ms
Duty = 50% 8Circuits
-38
mA /
ch
TD62783AP / AFW
12
Input
Voltage
TD62784AP / AFW
V
IN
24
V
TD62783AP / AFW
2.0
5.0
15
Output
On
TD62784AP / AFW
V
IN (ON)
4.5
12.0
30
TD62783AP / AFW
0
0.8
Input
Voltage
Output
Off
TD62784AP / AFW
V
IN (OFF)
0
2.0
V
AP
50
Clamp Diode Reverse
Voltage
AFW
V
R
35
V
Clamp Diode Forward Current
I
F
400
mA
AP Ta
=
85C
0.76
Power Dissipation
AFW
P
D
Ta = 85C
(Note)
0.48
W
Note:
On Glass Epoxy PCB (75 114 1.6 mm Cu 20%)
TD62783,784AP/AFW
2001-07-05
3
ELECTRICAL CHARACTERISTICS
(Ta = 25C)
CHARACTERISTIC SYMBOL
TEST
CIR-
CUIT
TEST CONDITION
MIN
TYP.
MAX
UNIT
Output Leakage Current
I
CEX
1
V
CC
= V
CC MAX.
V
IN
= 0.4 V
Ta = 25C
100
A
V
IN
= V
IN (ON)
,
I
OUT
= -350 mA
2.0
V
IN
= V
IN (ON)
,
I
OUT
= -225 mA
1.9
Output Saturation Voltage
V
CE (sat)
2
V
IN
= V
IN (ON)
,
I
OUT
= -100 mA
1.8
V
V
IN
= 2.4 V
36 52
TD62783AP / AFW
V
IN
= 3.85 V
180 260
V
IN
= 5 V
92 130
Input Current
TD62784AP / AFW
I
IN (ON)
3
V
IN
= 12 V
790
1130
A
TD62783AP / AFW
V
CE
= 2.0 V
2.0
TD62784AP / AFW
V
IN (ON)
I
OUT
= -350 mA
4.5
TD62783AP / AFW
0.8
Input Voltage
TD62784AP / AFW
V
IN (OFF)
4
I
OUT
= -500 A
2.0
V
Supply Current
I
CC (ON)
3 V
IN
= V
IN (ON)
, V
CC
= 50 V
2.5 mA /
ch
Clamp Diode Reverse Current
I
R
5 V
R
= 50 V
50 A
Clamp Diode Forward Voltage
V
F
6 I
F
= 350 mA
2.0 V
Turn-On Delay
t
ON
0.15
Turn-Off Delay
t
OFF
7
V
CC
= V
CC
MAX.
R
L
= 125
C
L
= 15 pF, R
L
= 88 (F)
1.8
s
TD62783,784AP/AFW
2001-07-05
4
TEST CIRCUIT
1. I
CEX
2. V
CE (sat)
3. I
IN (ON)
, I
CC
4. V
IN (ON)
, V
IN (OFF)
5. I
R
6. V
F
7. t
ON
, t
OFF
Note 1: Pulse width 50 s, duty cycle 10%
Output impedance 50 , t
r
5 ns, t
f
10 ns
Note 2: C
L
includes probe and jig capacitance
PRECAUTIONS for USING
This IC does not integrate protection circuits such as overcurrent and overvoltage protectors.
Thus, if excess current or voltage is applied to the IC, the IC may be damaged. Please design the IC so that
excess current or voltage will not be applied to the IC.
Utmost care is necessary in the design of the output line, V
CC
and GND line since IC may be destroyed due to
short-circuit between outputs, air contamination fault, or fault by improper grounding.
TD62783,784AP/AFW
2001-07-05
5
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