TOSHIBA
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
MICROWAVE SEMICONDUCTOR
MICROWAVE SEMICONDUCTOR
MICROWAVE SEMICONDUCTOR
TIM1011-5L
TIM1011-5L
TIM1011-5L
TIM1011-5L
TECHNICAL DATA
TECHNICAL DATA
TECHNICAL DATA
TECHNICAL DATA
FEATURES
FEATURES
FEATURES
FEATURES
HIGH POWER
BROAD BAND INTERNALLY MATCHED
P1dB=37.5dBm at 10.7GHz to 11.7GHz
HIGH GAIN HERMETICALLY SEALED PACKAGE
G1dB=7.0dB at 10.7GHz to 11.7GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
C )
C )
C )
C )
CHARACTERISTICS
SYMBOL
CONDITION
MIN. TYP. MAX. UNIT
Output Power at 1dB
Compression Point
P
1dB
37.0
37.5
dBm
Power Gain at 1dB
Compression Point
G
1dB
6.0
7.0
dB
Drain Current
I
DS1
2.0
2.5
A
Power Added Efficiency
add
V
DS
=
9V
f
=10.7-11.7GHz
23
%
3rd Order Intermodulation
Distortion
IM
3
-42
-45
dBc
Drain Current
I
DS2
Two Tone Test
P=26dBm
(Single Carrier Level)
2.0
2.5
A
Channel Temperature Rise
Tch
V
DS
X
I
DS
X
R
th(c-c)
80
C
ELECTRICAL CHARACTERISTICS ( Ta= 25
ELECTRICAL CHARACTERISTICS ( Ta= 25
ELECTRICAL CHARACTERISTICS ( Ta= 25
ELECTRICAL CHARACTERISTICS ( Ta= 25
C )
C )
C )
C )
CHARACTERISTICS
SYMBOL
CONDITION
MIN. TYP. MAX. UNIT
Transconductance
gm
V
DS
=
3V
I
DS
=2.4A
1400
mS
Pinch-off Voltage
V
GSoff
V
DS
=
3V
I
DS
= 72mA
-2.0
-3.5
-5.0
V
Saturated Drain Current
I
DSS
V
DS
=
3V
V
GS
= 0V
5.0
5.7
A
Gate-Source Breakdown
Voltage
V
GSO
I
GS
= -72
A
-5
V
Thermal Resistance
R
th(c-c)
Channel to Case
3.0
3.7
C/W
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No
license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
TOSHIBA CORPORATION
TOSHIBA CORPORATION
TOSHIBA CORPORATION
TOSHIBA CORPORATION
Apr. 2000
2
TIM1011-5L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
C )
C )
C )
C )
CHARACTERISTICS
SYMBOL
RATING
UNIT
Drain-Source Voltage
V
DS
15
V
Gate-Source Voltage
V
GS
-5
V
Drain Current
I
DS
5.7
A
Total Power Dissipation (Tc= 25
C)
P
T
30
W
Channel Temperature
T
ch
175
C
Storage
T
stg
-65
+175
C
PACKAGE OUTLINE (2-9D1B)
PACKAGE OUTLINE (2-9D1B)
PACKAGE OUTLINE (2-9D1B)
PACKAGE OUTLINE (2-9D1B)
HANDLING PRECAUTIONS FOR PACKAGED TYPE
HANDLING PRECAUTIONS FOR PACKAGED TYPE
HANDLING PRECAUTIONS FOR PACKAGED TYPE
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds
Soldering iron should be grounded and the operating time should not exceed 10 seconds
Soldering iron should be grounded and the operating time should not exceed 10 seconds
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
at 260
at 260
at 260
C.
C.
C.
C.
4-R2.4
0.5
0.15
13.0
0.3
17.0 MAX.
9.7
0.3
2.5
0.3
2.0M
IN
2.0M
IN.
0.2M
A
X
1.2
0.3
1.8
0.3
8.5 MAX.
0.1
3.2M
A
X
-0.
0
5
+0
.1
Gate
Source
Drain
Unit : mm
3
TIM1011-5L
VDS= 9V
VDS= 9V
VDS= 9V
VDS= 9V
IDS= 2.0A
IDS= 2.0A
IDS= 2.0A
IDS= 2.0A
Pin= 31.5dBm
Pin= 31.5dBm
Pin= 31.5dBm
Pin= 31.5dBm
VDS= 9V
IDS
2.0A
Pin= 31.5dBm
35
36
37
38
39
40
41
9.7
10.2
10.7
11.2
11.7
12.2
12.7
Frequency (GHz)
Po (dBm)
Output Power vs. Input Power
Output Power vs. Input Power
Output Power vs. Input Power
Output Power vs. Input Power
32
32
32
32
33
33
33
33
34
34
34
34
35
35
35
35
36
36
36
36
37
37
37
37
38
38
38
38
39
39
39
39
40
40
40
40
41
41
41
41
25
25
25
25
27
27
27
27
29
29
29
29
31
31
31
31
33
33
33
33
35
35
35
35
Pin (dBm)
Pin (dBm)
Pin (dBm)
Pin (dBm)
Po (dBm)
Po (dBm)
Po (dBm)
Po (dBm)
0
0
0
0
10
10
10
10
20
20
20
20
30
30
30
30
40
40
40
40
50
50
50
50
60
60
60
60
70
70
70
70
80
80
80
80
90
90
90
90
add (%)
add (%)
add (%)
add (%)
Output Power vs. Frequency
VDS = 9 V
IDS
2.0 A
Pin = 30.5 dBm
f = 11.7 GHz
VDS = 9 V
IDS
2.0 A
4
0
0
0
0
10
10
10
10
20
20
20
20
30
30
30
30
40
40
40
40
50
50
50
50
0
0
0
0
40
40
40
40
80
80
80
80
120
120
120
120
160
160
160
160
200
200
200
200
Tc ()
Tc ()
Tc ()
Tc ()
P
P
P
P
T
T
T
T
(W)
(W)
(W)
(W)
-60
-60
-60
-60
-50
-50
-50
-50
-40
-40
-40
-40
-30
-30
-30
-30
-20
-20
-20
-20
-10
-10
-10
-10
22
22
22
22
24
24
24
24
26
26
26
26
28
28
28
28
30
30
30
30
32
32
32
32
Po (dBm), Single Carrier
Po (dBm), Single Carrier
Po (dBm), Single Carrier
Po (dBm), Single Carrier
IM3 (dBc)
IM3 (dBc)
IM3 (dBc)
IM3 (dBc)
IM3 vs. OUTPUT POWER CHARACTERISTICS
POWER DISSIPATION vs. CASE TEMPERATURE
TIM1011-5L
Po(dBm), Single Carrier
VDS= 9V
IDS
2.0A
f=11.2 GHz
f= 5MHz
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