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Электронный компонент: TLN227

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TLN227(F)
2004-01-06
1
TOSHIBA Infrared LED GaAAs Infrared Emitter
TLN227(F)
Lead Free Product
For Space-Optical-Transmission

High radiant power: Po = 18mW (typ.) at I
F
= 50mA
Wide half-angle value: = 1 / 2 21 (typ.)
High-speed response: t
r
, t
f
= 30ns (typ.)
Light source for remote control
Designed for transmission of wireless AVsignals purpose.
Designed for high-speed data transmission




Maximum Ratings
(Ta = 25C)
Characteristic Symbol
Rating
Unit
Forward current
I
F
100
mA
Pulse forward current
I
FP
1000
(Note
1)
mA
Power dissipation
P
D
220
mW
Reverse voltage
V
R
4
V
Operating temperature
T
opr
-25~85 C
Storage temperature
T
stg
-30~100 C
Soldering temperature (5s)
T
sol
260
C
(Note 1): Frequency = 100kHz, duty = 1%
Optical And Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min
Typ.
Max
Unit
Forward voltage
V
F
I
F
= 100mA
1.8 2.2 V
Reverse current
I
R
V
R
= 4V
60 A
Radiant power
P
O
I
F
= 50mA
14
18
mW
Radiant intensity
I
E
I
F
= 50mA
100 mW
/
sr
Rise time, fall time
tr, tf
I
FP
= 100mA, P
W
= 100ns
30 ns
Cut
-off frequency
(Note 2)
fc
I
F
= 50mA
DC
+ 5mAp
-p 10
15
MHz
Capacitance C
T
V
R
= 0, f = 1MHz
110 pF
Peak emission wavelength
P
I
F
= 50mA
830
870
900
nm
Spectral line half width
I
F
= 50mA
50 nm
Half value angle
2
1
I
F
= 50mA
5
(Note 2): Frequency when modulation light power decreases by 3dB from 1 MHz.
Unit: mm
TOSHIBA 4-6J1
Pin Connection
1. Anode
2. Cathode
1
2
TLN227(F)
2004-01-06
2
Precautions
Please be careful of the followings.
1. Soldering must be performed under the lead stopper.
2. When forming the leads, bend each lead under the stopper without leaving forming stress to the
body of the device. Soldering must be performed after the leads have been formed.
3. Radiant power falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in radiant power over time.
TLN227(F)
2004-01-06
3

I
F
Ta
Ambient temperature Ta (C)
A
l
l
o
wabl
e fo
rwa
r
d
cu
rre
nt
I
F
(m
A
)
20 40 60 80
140
60
40
20
120
0
0
100
80
100 120
V
F
Ta

(typ.)
Ambient temperature Ta (C)
Fo
r
w
ard

v
o
ltage
V
F
(V
)
25 0 25 50
125
1.4
1.3
1.2
1.9
1.1
-50
1.5
75 100
1.7
1.6
1.8
I
F
= 80mA
I
F
= 50mA
I
F
= 20mA
I
F
= 5mA
I
FP
V
FP

(typ.)
Pulse forward voltage VFP (V)
Puls
e Fo
rwa
r
d Cur
r
e
n
t

I FP
(
m
A
)
1000
1
0
100
10
3
2
3 4 5
6
500
300
30
50
5
1
Pulse width 100s
Repetitive
frequency = 100Hz
Ta = 25C
Relative P
O
I
FP
(typ.)
Pulse forward current I
FP
(mA
)
R
e
lativ
e
ra
di
ant
po
w
e
r
1.2
0
0
0.8
0.6
0.4
0.2
200 4000
600
1000
800
1.0
Pulse
width = 1ms
Duty = 10%
Pulse width PW (s)
I
FP
P
W
Allo
w
abl
e p
u
l
s
e
fo
r
w
a
r
d
cu
r
r
en
t
I FP
(mA
)
10 30
10m
300
100
50
30
3
500
1000
100
300 1m 3m
20000
3000
5000
10000
Ta = 25C
f = 100Hz
500
200
10k
5k
2k
1k
I
F
V
F

(typ.)
Forward voltage VF (V)
Fo
r
w
ar
d c
u
rren
t


I F
(m
A
)
1.2 1.4 1.6
2
1
0.01
1
100
1.8
0.1
10
75C
50C
-25C
0C
25C
85C
TLN227(F)
2004-01-06
4

Frequency f (MHz)
Frequency Characteristic (typ.)
Res
p
ons
e
(d
B)
0.3 1
3 10
100
0.1
30
4
-8
-10
2
0
-2
-4
-6
0.5
5 50
Distance d (m)
T
PS70
3
(
F
) sh
ort ci
r
c
uit
c
u
rr
ent


I SC
(
A)
Distance Characteristics
0.1
1 10
0.1
0.01
1000
100
10
1
Pop = 23mW at IFP = 180mA,
f = 100kHz, duty = 50%
Po = 14mW at IF = 50mA
Wavelength Characteristic
(typ.)
Wavelength (nm)
R
e
lativ
e
ra
di
ant
po
w
e
r
1.0
0
800
0.8
0.6
0.4
0.2
840
880 920 960 1000
IF = 50mA
Radiation
Pattern
(typ.)
Ta = 25C
Relative radiant power
0 0.2 0.4 0.6 0.8 1.0
0
10
20
30
40
50
60
70
80
90
10
20
30
40
50
60
70
80
90
Relative P
O
T
a
(typ.)
Ambient temperature Ta (C)
R
e
lativ
e
ra
di
ant
po
w
e
r
10
0.1
-50
1
-25 0 25 75
50
IF = 50mA
100 125
TLN227(F)
2004-01-06
5

The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
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medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
030619EAC
RESTRICTIONS ON PRODUCT USE