TLP331,TLP332
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo
-Transistor
TLP331,TLP332
Office Machine
Household Use Equipment
Programmable Controllers
AC / DC
-Input Module
Telecommunication
The TOSHIBA TLP331 and TLP332 consists of a gallium arsenide
infrared emitting diode optically coupled to a photo-transistor in a six
lead plastic DIP package.
This photocoupler provides the unique feature of high current transfer
ratio at both low output voltage and low input current. This makes it
ideal for use in low power logic circuits, telecommunications equipment
and portable electronics isolation applications.
TLP332 is no-base internal connection for high-EMI environments.
Collector-emitter voltage: 55V (min.)
Isolation voltage: 5000Vrms (min.)
UL recognized: UL1577, file no. E67349
Current transfer ratio
Current Transfer Ratio (min.)
Ta = 25C
Ta =
-25~75C
Classi
-
fication
(*)
I
F
= 1mA
V
CE
= 0.5V
I
F
= 0.5mA
V
CE
= 1.5V
I
F
= 1mA
V
CE
= 0.5V
Marking
Of
Classi
-
Fication
Rank BV
200%
100%
100%
BV
Standard 100%
50%
50% BV,
blank
(*) Ex. Standard: TLP331
Rank BV: TLP331(BV)
(Note) Application type name for certification test,
please use standard product type name, i.e.
TLP331(BV): TLP331
Pin Configurations(
top view)
2
1: ANODE
2: CATHODE
3: NC
4: EMITTER
5: COLLECTOR
6: BASE
1
5
6
4
3
2
1: ANODE
2: CATHODE
3: NC
4: EMITTER
5: COLLECTOR
6: NC
5
6
4
3
1
TLP331 TLP332
Unit in mm
TOSHIBA 11-7A8
Weight: 0.4 g
TLP331,TLP332
2002-09-25
2
Maximum Ratings
(Ta = 25C)
Characteristic Symbol
Rating
Unit
Forward current
I
F
50 mA
Forward current derating (Ta 39C)
I
F
/C
-0.7
mA / C
Peak forward current (100s pulse, 100pps)
I
FP
1 A
Reverse Voltage
V
R
5 V
LE
D
Junction temperature
T
j
125 C
Collector
-emitter voltage
V
CEO
55 V
Collector
-base voltage (TLP331)
V
CBO
80 V
Emitter
-collector voltage
V
ECO
7 V
Emitter
-base voltage (TLP331)
V
EBO
7 V
Collector current
I
C
50 mA
Power dissipation
P
C
150 mW
Power dissipation derating (Ta 25C)
P
C
/ C
-1.5 mW
/
C
Det
e
c
t
or
Junction temperature
T
j
125 C
Storage temperature range
T
stg
-55~125 C
Operating temperature range
T
opr
-55~100 C
Lead soldering temperature (10s)
T
sol
260 C
Total package power dissipation
P
T
250
mW
Total package power dissipation derating (Ta25C) P
T
/C
-2.5 mW
/
C
Isolation voltage (AC, 1min., RH 60%)
(Note 1)
BV
S
5000 V r m s
(Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic Symbol
Min.
Typ.
Max.
Unit
Supply voltage
V
CC
5 25 V
Forward current
I
F
--
1.6
25
mA
Collector current
I
C
1 10 mA
Operating temperature
T
opr
-25
75 C
TLP331,TLP332
2002-09-25
3
Individual Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Forward voltage
V
F
I
F
= 10mA
1.0
1.15
1.3
V
Reverse current
I
R
V
R
= 5V
10 A
LE
D
Capacitance C
T
V = 0, f = 1MHz
30 pF
Collector
-emitter
breakdown voltage
V
(BR)CEO
I
C
= 0.5mA
55
V
Emitter
-collector
breakdown voltage
V
(BR)ECO
I
E
= 0.1mA
7
V
Collector
-base breakdown voltage
(TLP331)
V
(BR)CBO
I
C
= 0.1mA
80
V
Emitter
-base breakdown voltage
(TLP331)
V
(BR)EBO
I
E
= 0.1mA
7
V
V
CE
= 24V
10 100 nA
Collector dark current
I
CEO
V
CE
= 24V, Ta = 85C
2 50 A
Collector dark current
(TLP331)
I
CER
V
CE
= 24V, Ta = 85C
R
BE
= 1M
0.5 10 A
Collector dark current
(TLP331)
I
CBO
V
CB
= 10V
0.1 nA
DC forward current gain
(TLP331)
h
FE
V
CE
= 5V, I
C
= 0.5mA
1000
Det
e
c
t
or
Capacitance (collector to emitter)
C
CE
V = 0 , f = 1MHz
12 pF
Coupled Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
100
1200
Current transfer ratio
I
C
/ I
F
I
F
= 1mA, V
CE
= 0.5V
Rank
BV 200
1200
%
50
Low input CTR
I
C
/ I
F(low)
I
F
= 0.5mA, V
CE
= 1.5V
Rank
BV 100
%
Base photo
-current (TLP331)
I
PB
I
F
= 1mA, V
CB
= 5V
10 A
I
C
= 0.5mA I
F
= 1mA
-- 0.4
0.2
Collector
-emitter
saturation voltage
V
CE(sat)
I
C
= 1mA I
F
= 1mA
Rank
BV
0.4
V
Coupled Electrical Characteristics
(Ta = 25~75C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
50
Current transfer ratio
I
C
/ I
F
I
F
= 1mA, V
CE
= 0.5V
Rank
BV 100
%
50
Low input CTR
I
C
/ I
F(low)
I
F
= 0.5mA, V
CE
= 1.5V
Rank
BV 100
%
TLP331,TLP332
2002-09-25
4
Isolation Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Capacitance (input to output)
C
S
V
S
= 0, f = 1MHz
0.8 pF
Isolation resistance
R
S
V = 500V
5
10
10
10
14
AC, 1 minute
5000
AC, 1 second, in oil
10000
V r m s
Isolation voltage
BV
S
DC, 1 minute, in oil
10000 Vdc
Switching Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Rise time
t
r
8
Fall time
t
f
8
Turn
-on time
t
on
10
Turn
-off time
t
off
V
CC
= 10V
I
C
= 2mA
R
L
= 100
8
s
Turn
-on time
t
ON
10
Storage time
t
S
50
Turn
-off time
t
OFF
R
L
= 4.7k (Fig.1)
R
BE
= OPEN
V
CC
= 5V, I
F
= 1.6mA
300
s
Turn
-on time
t
ON
12
Storage time
t
S
30
Turn
-off time
t
OFF
R
L
= 4.7k (Fig.1)
R
BE
= 470k (TLP331)
V
CC
= 5V, I
F
= 1.6mA
100
s
Fig. 1 Switching time test circuit
IF
VCE
tON
tOFF
t
S
4.5V
0.5V
V
CC
VCC
VCE
RL
IF
RBE
TLP331,TLP332
2002-09-25
5
I
F
Ta
Ambient temperature Ta (C)
A
l
l
o
w
abl
e fo
rw
a
r
d
cu
rre
nt
I
F
(
m
A
)
0
80
0
-20
100
60
40
20
20
40
60 80 100
120
P
C
Ta
Ambient temperature Ta (C)
A
l
l
o
w
abl
e col
l
ect
o
r
pow
er
Dissip
a
tion
P
C
(mW
)
160
0
-20
200
120
80
40
0 20
40 60 80 100
120
Fo
rw
ar
d v
o
l
t
age
te
mp
er
atu
r
e C
oeffi
ci
e
n
t
V
F
/
Ta
(
m
V
/
C
)
V
F
/Ta
I
F
-3.2
-0.4
0.1
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
0.3 1 3 10
30
50
0.5 5
Forward current I
F
(mA)
I
FP
V
FP
Pulse forward voltage V
FP
(V)
P
u
l
s
e f
o
rw
ar
d cu
rr
ent
I
FP
(m
A
)
0.6
1000
1
Pulse width10s
Repetitive frequency
= 100Hz
Ta = 25C
500
300
100
50
30
10
5
3
1.0 1.4 1.8 2.2 2.6
I
FP
D
R
DUTY CYCLE RATIO D
R
P
u
l
s
e f
o
rw
ar
d cu
rr
ent
I
FP
(m
A
)
3
10
5000
1000
500
300
100
50
30
10
-2
3 3 3
10
-3
10
-1
10
0
3000
Pulse width100s
Ta = 25C
I
F
V
F
Forward voltage V
F
(V)
Fo
rw
ar
d
c
u
r
r
en
t I
F
(m
A
)
0.6
1
1000
100
50
30
10
5
3
1.0 1.2
1.6
0.8 1.4
1.8
300
500
Ta = 25C
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