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Электронный компонент: TLP801A

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TLP801A(F)
2004-02-12
1
TOSHIBA
Photo-Interrupter Infrared LED+Phototransistor
TLP801A(F)
Lead Free Product
Optical Switches
Position And Rotation Detection
Timing Detection In Copiers, Printers,
Fax Machines, Etc.



The TLP801A(F) photo-interrupter can be used for
high-speed position detection.



Gap: 3mm
Resolution: Slit width = 1mm
Fast response speed: t
r
, t
f
= 6s(typ.)
High current transfer ratio: I
C
/ I
F
= 10%(min)
Designed for direct mounting on printed circuit
boards
Package material: Polycarbonate





Maximum Ratings
(Ta = 25C)
Characteristic Symbol
Rating
Unit
Forward current
I
F
50 mA
Forward current derating
(Ta > 25C)
I
F
/ C
-0.33
mA / C
LED
Reverse voltage
V
R
5 V
Collector-emitter voltage
V
CEO
30 V
Emitter-collector voltage
V
ECO
5 V
Collector power dissipation
P
C
75 mW
Collector power dissipation
derating(Ta > 25C)
P
C
/ C
-1
mW / C
De
t
e
cto
r
Collector current
I
C
50
mA
Operating temperature range
T
opr
-25~85 C
Storage temperature range
T
stg
-40~100 C

TOSHIBA
11-13D2
Weight: 0.78g(typ.)
TLP801A(F)
2004-02-12
2
Markings







Optical And Electrical Characteristics
(Ta = 25C)
Characteristic Symbol
Test
Condition
Min
Typ.
Max
Unit
Forward voltage
V
F
I
F
= 10mA
1.00
1.15
1.30
V
Reverse current
I
R
V
R
= 5V
10
A
LED
Peak emission wavelength
P
I
F
= 20mA
940 nm
Dark current
I
D
(I
CEO
) V
CE
= 24V, I
F
= 0
0.1
A
De
t
e
cto
r
Peak sensitivity wavelength
P
820 nm
Current transfer ratio
I
C /
I
F
V
CE
= 5V, I
F
= 20mA
10
165 %
Collector
-emitter saturation
voltage
V
CE(sat)
I
F
= 20mA, I
C
= 1mA
0.15
0.4
V
Rise time
t
r
6
C
o
upled
Fall time
t
f
V
CC
= 5V, I
C
= 2mA,
R
L
= 100
6
s
Monthly lot number
Product number
Year of manufacture
Month of manufacture
(January to December denoted by letters A to L respectively)
last digit of year of manufacture
Letter color: Silver
P8
0
1
A
TLP801A(F)
2004-02-12
3
Precautions
The following points must be borne in mind.
1. Soldering temperature: 260C max
Soldering time: 5s max
(Soldering must be performed 1.5mm under the package body.)
2. Clean only the soldered part of the leads. Do not immerse the entire package in the cleaning solvent.
3. Mount the device on a level surface.
4. Screws should be tightened to a clamping torque of 0.59 Nm.
5. The package is made of polycarbonate. Polycarbonate is usually stable with acid, alcohol and aliphatic
hydrocarbons, however, with petrochemicals (such as benzene, toluene and acetone), alkalis, aromatic
hydrocarbons, or chloric hydrocarbons, polycarbonate may crack, swell or melt.
Please take this into account when choosing a packaging material by referring to the table below.
<Chemicals Which Should Not Be Used With Polycarbonate>
Phenomenon
Chemicals
A
Staining and slight
deterioration
Nitric acid (diluted), hydrogen peroxide, chlorine
B
Cracking, crazed or
swelling
Acetic acid (70% or more)
Gasoline
Methyl ethyl ketone, ethyl acetate, butyl acetate
Ethyl methacrylate, ethyl ether, MEK
Acetone, m
-amino alcohol, carbon tetrachloride
Carbon disulfide, trichloroethylene, cresol
Thinners,oil of turpentine
Triethanolamine, TCP, TBP
C
Melting
( ): Used as solvent
Concentrated sulfuric acid
Benzene
Styrene, acrylonitrile, vinyl acetate
Ethylenediamine, diethylenediamine
(Chloroform, methyl chloride, tetrachloromethane,dioxane,
1,
2
-dichloroethane)
D Decomposition
Ammonia water
Other alkalis

6. Conversion efficiency falls over time due to current which flows in the infrared LED.
When designing a circuit, take into account this change in conversion efficiency over time.
The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1 : 1.

(0)
P
(t)
P
(0)
/I
I
(t)
I
/
I
O
O
F
C
F
C
=
TLP801A(F)
2004-02-12
4
Package Dimensions
Weight: 0.78g(typ.)
Pin Connection

1. Anode
2. Cathode
3. Collector
4. Emitter
1
2
3
4
TLP801A(F)
2004-02-12
5


I
F
Ta
Ambient temperature Ta (C)
Allo
w
abl
e fo
r
w
a
r
d
curr
en
t I
F
(m
A)
80
0
0
60
40
20
20
40 60 80
100
P
C
Ta
Ambient temperature Ta (C)
Allo
w
abl
e col
l
e
ct
or
po
w
e
r
diss
ipatio
n P
C
(m
W
)
80
0
60
40
20
0
20
40 60 80 100
Forward current IF (mA)
Coll
ect
o
r
cur
r
e
n
t I
C
(
m
A
)
Ta = 25C
10
20
0.1
1
5
3
1
0.5
0.3
3
10
30
100
VCE = 5V
0.4
I
C
I
F
(typ.)
Forward voltage VF (V)
Fo
r
w
ar
d c
u
rren
t


I F
(m
A
)
100
1
0.8 0.9 1.0 1.1
1.2 1.3 1.4
50
30
10
5
3
Ta = 75C
50
25
0
- 25
I
F
V
F
(typ.)
100
3
1
50
30
10
5
30 100
10
3
Forward current IF (mA)
Curr
ent
tr
ans
fe
r r
a
tio

I
C
/
I F
(%
)
Ta = 25C
VCE = 5V
0.4
I
C
/ I
F
I
F
(typ.)
16
0
0
14
12
10
8
6
4
2
8
6
4
2
10 12 14 16
Collector-emitter voltage VCE (V)
Coll
ect
o
r cur
r
e
n
t

I C
(
m
A
)
Ta = 25C
I
C
V
CE
(typ.)
36
32
28
24
20
16
PC max
12
8
IF = 4mA
TLP801A(F)
2004-02-12
6


I
D
(I
CEO
) Ta
(typ.)
Ambient temperature Ta (C)
Dark

cur
r
e
n
t
I D
(I
CE
O
)
(
A)
10
- 4
10
10
- 3
100
20
40 60 80
1
10
- 1
10
- 2
0
VCE = 24V
10
5
V
CE(sat)
Ta
(typ.)
Ambient temperature Ta (C)
C
o
ll
e
c
to
r-
em
i
t
t
e
r
sa
tur
a
tio
n
V
o
lt
ag
e V
CE
(
s
a
t
) (
V
)
0.32
0.28
- 40
0.24
0.20
0.16
0.12
0.08
0.04
0
- 20
0
20
40
60
80
100
IF = 20mA
IC = 1mA
24
0
0
20
16
12
8
4
1
2
3
4
5
40
I
C
V
CE
(typ.)
Collector-emitter voltage VCE (V)
Coll
ect
o
r cur
r
e
n
t

I C
(m
A)
PC max
50
45
35
30
25
20
15
10
IF = 5mA
Ta=25C
Relative
I
C
Ta
(tyg.)
Ambient temperature Ta (C)
R
e
lativ
e
c
o
llec
t
or
c
u
r
r
e
n
t
1.4
0
- 40
1.2
1.0
0.6
0.4
0.2
0.8
- 20
0
20
40
60
80
100
1.6
VCE = 0.4V
5
IF = 20mA
TLP801A(F)
2004-02-12
7



1
0.1
300
100
50
30
10
5
3
0.3
1 3 10
ts
Switching characteristics
non saturated operation typ.
Load resistance RL (k)
Sw
it
ch
i
n
g
t
i
me


(
s
)
Ta = 25C
Repetitive
Frequency = 1kHz
Duty = 1 / 2
td
tf
tr,
IF
VCC = 5V
VOUT
= 3V
RL
Detection
position
Characteristics
(1)
typ.
Distance d (mm)
Rel
a
tiv
e
c
o
llect
or c
u
rre
nt
IF = 20mA
VCE = 5V
Ta = 25C
+
0
d
Shut
-ter
-
1.0
0
- 3
0.8
0.6
0.4
0.2
- 2
- 1
0
1
2
3
4
Switching characteristics
saturated operation
typ.
Load resistance RL (k)
Sw
it
ch
i
n
g
t
i
me


(
s
)
IF
VCC = 5V
VOUT
4.6V
RL
1000
1
1
10
30
50
300
500
5
3
3 10
30
100
100
tf
ts
td
Detection
position
Characteristics
(2)
typ.
Distance d (mm)
Rel
a
tiv
e
c
o
llect
or c
u
rre
nt
IF = 20mA
VCE = 5V
Ta = 25C
1.0
0
4
5 6 7 8
9
10
11
0.8
0.6
0.4
0.2
Shutter
d
td
3V
IF
VOUT
tr
ts
tf
0V
90%
10%
500
td
IF
VOUT
tr
ts
tf
90%
10%
0V
tr
TLP801A(F)
2004-02-12
8
Relative Positioning Of Shutter And Device
For normal operation position the shutter and the device as shown in the figure below. By considering the device's
detection direction characteristic and switching time, determine the shutter slit width and pitch.




Unit in mm
Center of sensor
8m
in
5.
5m
a
x
6.
85
Cross section between A and A'
Shutter
A
A
TLP801A(F)
2004-02-12
9
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
030619EAC
RESTRICTIONS ON PRODUCT USE