TPC8106-H
2002-02-06
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
TPC8106-H
High Speed and High Efficiency DC-DC Converters
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Small footprint due to small and thin package
High speed switching
Small gate charge
: Qg = 52 nC (typ.)
Low drain-source ON resistance
: R
DS
(ON)
= 14 m (typ.)
High forward transfer admittance : |Y
fs
| = 16.6 S (typ.)
Low leakage current : I
DSS
= -10 A (max) (V
DS
= -30 V)
Enhancement-mode : V
th
= -0.8~ -2.0 V (V
DS
=- 10 V, I
D
= -1 mA)
Maximum Ratings
(Ta = 25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
-30 V
Drain-gate voltage (R
GS
= 20 k)
V
DGR
-30 V
Gate-source voltage
V
GSS
20 V
DC (Note
1)
I
D
-10
Drain current
Pulse (Note
1)
I
DP
-40
A
Drain power dissipation
(t = 10 s)
(Note
2a)
P
D
2.4
W
Drain power dissipation
(t = 10 s)
(Note
2b)
P
D
1.0
W
Single pulse avalanche energy
(Note
3)
E
AS
130
mJ
Avalanche current
I
AR
-10 A
Repetitive avalanche energy
(Note 2a) (Note 4)
E
AR
0.24
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55 to 150
C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
TPC8106-H
2002-02-06
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
R
th (ch-a)
52.1 C/W
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
R
th (ch-a)
125 C/W
Marking
(Note 5)
Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: V
DD
= -24 V, T
ch
= 25C (initial), L = 0.1 mH, R
G
= 25 , I
AR
= -10 A
Note 4: Reptitve rating; pulse width limited by maximum channel temperature
Note 5:
on lower left of the marking indicates Pin 1.
shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
Type
TPC8106
H
(a)
FR-4
25.4 25.4 0.8
(unit:
mm)
(b)
FR-4
25.4 25.4 0.8
(unit:
mm)
TPC8106-H
2002-02-06
3
Electrical Characteristics
(Ta = 25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V
, V
DS
= 0 V
-- -- 10 A
Drain cut-off current
I
DSS
V
DS
= -30 V
, V
GS
= 0 V
-- -- 10 A
V
(BR) DSS
I
D
= -10 mA
, V
GS
= 0 V
-30 -- --
Drain-source breakdown voltage
V
(BR) DSX
I
D
= -10 mA
, V
GS
= 20 V
-15 -- --
V
Gate threshold voltage
V
th
V
DS
= -10 V,
I
D
= -1 mA
-0.8 -- -2.0 V
R
DS (ON)
V
GS
= -4 V,
I
D
= -5 A
-- 24 30
Drain-source ON resistance
R
DS (ON)
V
GS
= -10 V,
I
D
= -5 A
-- 14 20
m
Forward transfer admittance
|Y
fs
| V
DS
= -10 V,
I
D
= -5 A
8.3 16.6 -- S
Input capacitance
C
iss
--
2160
--
Reverse transfer capacitance
C
rss
-- 530 --
Output capacitance
C
oss
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
-- 720 --
pF
Rise time
t
r
--
12
--
Turn-on time
t
on
--
20
--
Fall time
t
f
-- 100 --
Switching time
Turn-off time
t
off
-- 250 --
ns
Total gate charge (Gate-source
plus gate-drain)
Q
g
--
52
--
Gate-source charge
Q
gs
--
38
--
Gate-drain ("miller") charge
Q
gd
V
DD
-24 V, V
GS
= -10 V, I
D
= -10 A
-- 14 --
nC
Source-Drain Ratings and Characteristics
(Ta =
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
I
DRP
-- --
--
-40 A
Forward voltage (diode)
V
DSF
I
DR
= -10 A, V
GS
= 0 V
-- -- 1.2 V
TPC8106-H
2002-02-06
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TPC8106-H
2002-02-06
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TPC8106-H
2002-02-06
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TPC8106-H
2002-02-06
7
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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