TPC8403
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
(P Channel U-MOSII/N Channel U-MOSII)
TPC8403
Motor Drive Applications
Notebook PC Applications
Portable Equipment Applications
Low drain-source ON resistance: P Channel R
DS (ON)
= 45 m (typ.)
N Channel R
DS (ON)
= 25 m (typ.)
High forward transfer admittance: P Channel |Y
fs
| = 6.2 S (typ.)
N Channel |Y
fs
| = 7.8 S (typ.)
Low leakage current:
P Channel I
DSS
= -10 A (V
DS
= -30 V)
N Channel I
DSS
= 10 A (V
DS
= 30 V)
Enhancement mode
: P Channel V
th
= -1.0~-2.2 V (V
DS
= -10 V, I
D
= -1 mA)
: N Channel V
th
= 1.3~2.5 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25C)
Rating
Characteristics Symbol
P Channel N Channel
Unit
Drain-source voltage
V
DSS
-30 30 V
Drain-gate voltage (R
GS
= 20 k) V
DGR
-30 30 V
Gate-source voltage
V
GSS
20
20 V
DC (Note
1)
I
D
-4.5 6
Drain current
Pulse (Note
1)
I
DP
-18 24
A
Single-device operation
(Note
3a)
P
D(1)
1.5
1.5
Drain power
dissipation
(t
= 10s)
(Note 2a)
Single-device value at
dual operation
(Note 3b)
P
D(2)
1.1
1.1
Single-device operation
(Note
3a)
P
D(1)
0.75 0.75
Drain power
dissipation
(t
= 10s)
(Note 2b)
Single-device value at
dual operation
(Note 3b)
P
D(2)
0.45 0.45
W
Single pulse avalanche energy
E
AS
26.3
(Note 4a)
46.8
(Note 4b)
mJ
Avalanche current
I
AR
-4.5 6 A
Repetitive avalanche energy
Single-device value at operation
(Note 2a, 3b, 5)
E
AR
0.11 mJ
Channel temperature
T
ch
150 C
Storage temperature range
T
stg
-55~150 C
Note 1, Note 2ab, Note 3ab, Note 4and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
8 7
6 5
1 2
3 4
N-ch P-ch
TPC8403
2004-07-06
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Single-device operation
(Note 3a)
R
th (ch-a) (1)
83.3
Thermal resistance, channel to ambient
(t
= 10s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
114
Single-device operation
(Note 2a)
R
th (ch-a) (1)
167
Thermal resistance, channel to ambient
(t
= 10s)
(Note 2b) Single-device value at
dual operation
(Note 2b)
R
th (ch-a) (2)
278
C/W
Marking
Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b) Device mounted on a glass-epoxy board (b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4:
a) V
DD
= -24 V, T
ch
= 25C (Initial), L = 1.0 mH, R
G
= 25 , I
AR
= -4.5 A
b) V
DD
= 24 V, T
ch
= 25C (Initial), L = 1.0 mH, R
G
= 25 , I
AR
= 6.0 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6:
on lower left of the marking indicates Pin 1.
FR-4
25.4
25.4 0.8
(Unit: mm)
(a)
FR-4
25.4
25.4 0.8
(Unit: mm)
(b)
Weekly code:
(Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
T P C 8 4 0 3
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
TPC8403
2004-07-06
3
P-channel
Electrical Characteristics
(Ta
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
10
A
Drain cut-OFF current
I
DSS
V
DS
= -30 V, V
GS
= 0 V
-10
A
V
(BR) DSS
I
D
= -10 mA, V
GS
= 0 V
-30
Drain-source breakdown voltage
V
(BR) DSX
I
D
= -10 mA, V
GS
= 20 V
-15
V
Gate threshold voltage
V
th
V
DS
= -10 V, I
D
= -1 mA
-1.0
-2.2 V
V
GS
= -4.5 V, I
D
= -2.2 A
66 90
Drain-source ON resistance
R
DS (ON)
V
GS
= -10 V, I
D
= -2.2 A
45 55
m
Forward transfer admittance
|Y
fs
| V
DS
= -10 V, I
D
= -2.2 A
3.1 6.2
S
Input capacitance
C
iss
940
Reverse transfer capacitance
C
rss
270
Output capacitance
C
oss
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
390
pF
Rise time
t
r
13
Turn-ON time
t
on
21
Fall time
t
f
25
Switching time
Turn-OFF time
t
off
Duty <= 1%, t
w
= 10 s
73
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
18
Gate-source charge 1
Q
gs
1
4
Gate-drain ("miller") charge
Q
gd
V
DD
- -24 V, V
GS
= -10 V,
I
D
= -4.5 A
4
nC
Source-Drain Ratings and Characteristics
(Ta
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
-18 A
Forward voltage (diode)
V
DSF
I
DR
= -4.5 A, V
GS
= 0 V
1.2 V
R
L
=
6.8
V
DD
- -15 V
-10 V
V
GS
0 V
4.
7
I
D
= -2.2 A
V
OUT
TPC8403
2004-07-06
4
N-channel
Electrical Characteristics
(Ta
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
10
A
Drain cut-OFF current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10 A
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
30
Drain-source breakdown voltage
V
(BR) DSX
I
D
= 10 mA, V
GS
= -20 V
15
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
1.3
2.5 V
V
GS
= 4.5 V, I
D
= 3 A
38 46
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 3 A
25 33
m
Forward transfer admittance
|Y
fs
| V
DS
= 10 V, I
D
= 3 A
3.9 7.8
S
Input capacitance
C
iss
850
Reverse transfer capacitance
C
rss
180
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
270
pF
Rise time
t
r
11
Turn-ON time
t
on
18
Fall time
t
f
6.5
Switching time
Turn-OFF time
t
off
Duty <= 1%, t
w
= 10 s
27
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
17
Gate-source charge 1
Q
gs
1
3
Gate-drain ("miller") charge
Q
gd
V
DD
- 24 V, V
GS
= 10 V,
I
D
= 6 A
4
nC
Source-Drain Ratings and Characteristics
(Ta
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
24 A
Forward voltage (diode)
V
DSF
I
DR
= 6 A, V
GS
= 0 V
-1.2 V
R
L
=
5.0
V
DD
- 15 V
0 V
V
GS
10 V
4.
7
I
D
= 3.0 A
V
OUT
TPC8403
2004-07-06
5
P-channel
0.1
-0.1
1
10
100
-1
-10
-100
Common source
VDS = -10 V
Ta
= -55C
25C
Ta
= 100C
0.3
0.5
3
5
30
50
-0.3
-3
-30
1
-0.1
-1
-100
10
100
3
5
30
50
-10
Common source
Ta
= 25C
Pulse test
VGS = -4.5 V
VGS = -10 V
-0.3
-3
-30
0
0
-2
-3
-4
-5
-6
-6
-18
-1
-2
-10
-14
Ta
= 100C
-55C
25C
Common source
VDS = -10 V
Pulse test
0
0
-2
-4
-6
-8
-10
-0.1
-0.3
-0.5
-0.6
-12
-0.2
-0.4
Common source
Ta
= 25C
Pulse test
-2.2 A
ID = -4.5 A
-1.3A
0
-1
-2
-3
-4
-5
0
-2
-4
-6
-8
-10
VGS = -2.2 V
-2.4 V
-2.6 V
-2.8 V
-3 V
-3.2 V
-4 V
-3.6 V
-10 V
-8 V
Common source
Ta
= 25C
Pulse test
-3.4 V
-6 V
Common source
Ta
= 25C
Pulse test
0
-0.2
-0.4
-0.6
-0.8
-1.0
0
-1
-2
-3
-4
-5
VGS = -2.2 V
-2.4 V
-2.6 V
-2.8 V
-3 V
-3.2 V
-4 V
-6 V
-10 V
-8 V
I
D
V
DS
I
D
V
DS
I
D
V
GS
V
DS
V
GS
|Y
fs
| I
D
R
DS (ON)
I
D
F
o
r
w
ar
d t
r
a
n
sfe
r
ad
mittan
c
e
Y
fs
(S)
D
r
a
i
n-
sou
r
ce
vo
l
t
age
V
DS
(V)
Drain-source voltage VDS (V)
D
r
ain
cu
rre
nt I
D
(
A
)
Drain-source voltage VDS (V)
D
r
ain
cu
rre
nt
I D
(
A
)
Gate-source voltage VGS (V)
D
r
ain
cu
rre
nt
I D
(
A
)
Gate-source voltage VGS (V)
Drain current ID (A)
Drain current ID (A)
D
r
ain-
s
our
c
e
O
N
re
s
i
s
t
a
n
c
e
R
DS
(
O
N)
(m
)
TPC8403
2004-07-06
6
P-channel
1
-0.1
-1
-10
-100
10
100
1000
10000
-0.3
-3
-30
Common source
Ta
= 25C
f
= 1MHz
VGS = 0 V
Ciss
Coss
Crss
0
-80
0
160
80
-1
-2
-3
-40
40
120
Common source
VDS = -10 V
ID = -1 mA
Pulse test
0
-80
60
100
120
80
40
20
0
-40
40
80
120
160
Common source
Pulse test
-1.3 A
VGS = -4.5 V
VGS = -10 V
ID = -4.5 A
-2.2 A
ID = -4.5 A
-1.3 A
-2.2 A
R
DS (ON)
Ta
I
DR
V
DS
Capacitance V
DS
V
th
Ta
P
D
Ta
Dynamic input/output characteristics
Drain
po
w
e
r
diss
i
p
a
t
ion
P
D
(W
)
Gate
th
res
hol
d vol
t
a
g
e
V
th
(
V
)
Ambient temperature Ta (C)
D
r
ain
-
so
urc
e
O
N
r
e
si
stanc
e
R
DS
(
O
N)
(m
)
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
C
apacit
anc
e
C
(p
F)
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Drai
n
-
s
o
urc
e
v
o
l
t
a
ge V
DS
(V)
G
a
t
e
-
s
our
ce
vo
l
t
a
g
e
V
GS
(
V
)
Total gate charge Qg (nC)
Drain
re
v
e
r
s
e c
u
r
r
e
n
t
I DR
(
A
)
Common source
Ta
= 25C
Pulse test
VGS = 0 V
-0.1
0
0.2
0.4
0.6
0.8
1.2
-0.3
-0.5
-1
-10
-3
-5
1.0
-10
-3
-5
-1
0
8
16
24
32
16
12
8
4
0
Common source
ID = -4.5 A
Ta
= 25C
Pulse test
VDD = -24 V
VGS
-40
-30
-20
-10
0
0
0
0.4
0.8
1.2
1.6
2
40
80
200
160
120
Device mounted on a glass-epoxy board (
a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation (Note 3b)
Device mounted on a glass-epoxy board
(b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t
= 10 s
(1)
(2)
(3)
(4)
TPC8403
2004-07-06
7
P-channel
0.1
0.001 0.01 0.1
1
10
100
1000
1
0.3
0.5
3
5
10
30
50
100
300
1000
500
(1)
Single pulse
(2)
(3)
(4)
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
r
th
- t
w
Pulse width tw (S)
Drain-source voltage VDS (V)
N
o
rm
aliz
ed
t
r
an
s
i
en
t
t
h
erm
a
l
im
peda
nc
e
r
th
(
C
/
W
)
D
r
ain
cu
rre
nt
I D
(
A
)
Safe operating area
0.01
0.01 0.1 1
10 100
0.1
1
10
100
* Single
pulse Ta
= 25C
Curves must be derated linearly
with increase in temperature.
ID max (pulse) *
10 ms *
1 ms *
VDSS max
Single-device value at dual
operation (Note
3b)
TPC8403
2004-07-06
8
N-channel
0.1
0.1
1
10
100
1 10
100
0.3
0.5
3
5
30
50
0.3 3
30
Common source
VDS = 10 V
Pulse test
Ta
= -55C
Ta
= 25C
Ta
= 100C
1
0.1
1
100
10
100
3
5
30
50
10
Common source
Ta
= 25C
Pulse test
VGS = 10 V
VGS = 4.5 V
0.3
3
30
0
0
2
4
6
8
10
0.1
0.3
0.5
0.6
12
0.2
0.4
3 A
1.5 A
Common source
Ta
= 25C
Pulse test
ID = 6 A
0
0 2
3
4 5 6
8
20
1
16
4
12
100C
Ta
= -55C
25C
Common source
VDS = 10 V
Pulse test
I
D
V
DS
I
D
V
DS
I
D
V
GS
V
DS
V
GS
|Y
fs
| I
D
R
DS (ON)
I
D
F
o
r
w
ar
d t
r
a
n
sfe
r
ad
mittan
c
e
Y
fs
(S)
D
r
a
i
n-
sou
r
ce
vo
l
t
age
V
DS
(V)
Drain-source voltage VDS (V)
D
r
ain
cu
rre
nt I
D
(
A
)
Drain-source voltage VDS (V)
D
r
ain
cu
rre
nt
I D
(
A
)
Gate-source voltage VGS (V)
D
r
ain
cu
rre
nt
I D
(
A
)
Gate-source voltage VGS (V)
Drain current ID (A)
Drain current ID (A)
D
r
ain-
s
our
c
e
O
N
re
s
i
s
t
a
n
c
e
R
DS
(
O
N)
(m
)
0 0.2 0.4 0.6 0.8 1.0
0
2
4
6
8
10
Common source
Ta
= 25C
Pulse test
VGS = 2.6 V
2.8 V
2.9 V
3 V
3.1 V
3.2 V
3.3 V
3.4 V
3.6 V
4 V
6 V
10 V
8 V
0
1
2
3
4
5
0
4
8
12
16
20
VGS = 2.6 V
2.8 V
3 V
3.2 V
3.4 V
10 V
Common source
Ta
= 25C
Pulse test
3.6 V
3.8 V
4 V
6 V
8 V
TPC8403
2004-07-06
9
N-channel
0
0
10
20
30
40
8
16
24
32
16
12
8
4
0
VDD = 24 V
Common source
ID = 6 A
Ta
= 25C
Pulse test
VGS
0
-80
0
160
80
1
2
3
Common source
VDS = 10 V
ID = 1 mA
Pulse test
-40
40
120
1
0.1 1 10 100
10
100
1000
10000
Common source
Ta
= 25C
f
= 1MHz
VGS = 0 V
Ciss
Coss
Crss
0.3 3
30
0
-80
50
30
10
0
-40
40
80
120
160
60
40
20
Common source
Pulse test
VGS = 4.5 V
6 A
VGS = 10 V
ID = 1.5 A
3 A
6 A
ID = 1.5 A
3 A
R
DS (ON)
Ta
I
DR
V
DS
Capacitance V
DS
V
th
Ta
P
D
Ta
Gate
-so
u
r
c
e
v
o
ltage
V
GS
(
V
)
Dynamic input/output characteristics
Drain
po
w
e
r
diss
i
p
a
t
ion
P
D
(W
)
G
a
te
th
res
hol
d v
o
l
t
a
ge
V
th
(
V
)
Ambient temperature Ta (C)
D
r
ain
-
so
urc
e
O
N
r
e
si
stanc
e
R
DS
(
O
N)
(m
)
Drain-source voltage VDS (V)
Drain
re
v
e
r
s
e c
u
r
r
e
n
t
I DR
(
A
)
Drain-source voltage VDS (V)
Capa
citanc
e
C
(p
F)
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Total gate charge Qg (nC)
D
r
ain
-
so
urc
e
v
o
lt
a
ge
V
DS
(V
)
0.1
0
-0.2
-0.4
-0.6
-0.8
-1.2
0.3
0.5
1
10
3
5
-1.0
30
Common source
Ta
= 25C
Pulse test
10
5
3
1
VGS = 0 V
0
0
0.4
0.8
1.2
1.6
2
40
80
200
160
120
Device mounted on a glass-epoxy board (
a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation (Note 3b)
Device mounted on a glass-epoxy board
(b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t
= 10 s
(1)
(2)
(3)
(4)
TPC8403
2004-07-06
10
N-channel
r
th
- t
w
Pulse width tw (S)
Drain-source voltage VDS (V)
N
o
rm
aliz
ed t
r
ans
ien
t
t
her
m
a
l
im
p
edanc
e
r
th
(
C
/
W
)
D
r
ain
cu
rre
nt
I D
(
A
)
Safe operating area
0.1
0.001 0.01 0.1
1
10
100
1000
1
0.3
0.5
3
5
10
30
50
100
300
1000
500
(1)
(2)
(3)
(4)
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
Single pulse
0.01
0.01 0.1 1
10 100
0.1
1
10
100
* Single
pulse Ta
= 25C
Curves must be derated linearly
with increase in temperature.
ID max (pulse) *
10 ms *
1 ms *
VDSS max
Single-device value at dual
operation (Note
3b)
TPC8403
2004-07-06
11
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030619EAA
RESTRICTIONS ON PRODUCT USE
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