TPCA8103
2004-01-16
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS)
TPCA8103
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 3.1 m (typ.)
High forward transfer admittance: |Y
fs
| =45S (typ.)
Low leakage current: I
DSS
= -10 A (max) (V
DS
= -30 V)
Enhancement mode: V
th
= -0.8 to -2.0 V (V
DS
= -10 V, I
D
= -1 mA)
Maximum Ratings
(Ta = 25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
-30 V
Drain-gate voltage (R
GS
= 20 k)
V
DGR
-30 V
Gate-source voltage
V
GSS
20 V
DC (Note
1)
I
D
- 40
Drain current
Pulsed (Note 1)
I
DP
-120
A
Drain power dissipation (Tc=25C) P
D
45
W
Drain power dissipation
(t
= 10 s)
(Note
2a)
P
D
2.8
W
Drain power dissipation
(t
= 10 s)
(Note
2b)
P
D
1.6
W
Single pulse avalanche energy
(Note 3)
E
AS
208
mJ
Avalanche current
I
AR
- 40
A
Repetitive avalanche energy
(Tc=25C) (Note 4)
E
AR
4.5
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55 to 150
C
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
5.00.2
0.95
0.05
0.166
0.05
S
0.05 S
A
0.5
0.1
6.0
0.3
1.27
0.40.1
5.0
0.2
0.595
0.05 M A
1
4
5
8
0.150.05
0.80.1
1.1
0.2
4.250.2
0.6
0.1
3.5
0.2
1
4
5
8
1,2,3SOURCE
4GATE
5,6,7,8DRAIN
JEDEC
JEITA
TOSHIBA 2-5Q1A
Weight: 0.076 g (typ.)
Circuit Configuration
8 6
1 2 3
7
5
4
TPCA8103
2004-01-16
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to case
(Tc=25C)
R
th (ch-c)
2.78
C/W
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2a)
R
th (ch-a)
44.6
C/W
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2b)
R
th (ch-a)
78.1
C/W
Marking
(Note 5)
Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: V
DD
= 24 V T
ch
= 25C (initial) L = 100H R
G
= 25 I
AR
= - 40 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: on lower left of the marking indicates Pin 1.
(a)
FR-4
25.4
25.4 0.8
(Unit:
mm)
(b)
FR-4
25.4
25.4 0.8
(Unit:
mm)
TPCA
8103
Lot No.
Type
Weekly code:
(Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
TPCA8103
2004-01-16
3
Electrical Characteristics
(Ta = 25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
10
A
Drain cut-OFF current
I
DSS
V
DS
= -30 V, V
GS
= 0 V
-10
A
V
(BR) DSS
I
D
= -10 mA, V
GS
= 0 V
-30
Drain-source breakdown voltage
V
(BR) DSX
I
D
= -10 mA, V
GS
= 20 V
-13
V
Gate threshold voltage
V
th
V
DS
= -10 V, I
D
= - 1 mA
-0.8
-2.0 V
V
GS
= -4 V, I
D
= -20 A
5.2 6.8
Drain-source ON resistance
R
DS (ON)
V
GS
= -10 V, I
D
= -20 A
3.1 4.2
m
Forward transfer admittance
|Y
fs
| V
DS
= -10 V, I
D
= -20 A
22.5
45
S
Input capacitance
C
iss
7880
Reverse transfer capacitance
C
rss
1340
Output capacitance
C
oss
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
1450
pF
Rise time
t
r
15
Turn-ON time
t
on
13
Fall time
t
f
251
Switching time
Turn-OFF time
t
off
Duty <= 1%, t
w
= 10 s
596
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
184
Gate-source charge 1
Q
gs1
12
Gate-drain ("miller") charge
Q
gd
V
DD
- -24 V, V
GS
= -10 V,
I
D
= -40 A
58
nC
Source-Drain Ratings and Characteristics
(Ta = 25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
-120 A
Forward voltage (diode)
V
DSF
I
DR
= -40 A, V
GS
= 0 V
1.2 V
R
L
=
0.
8
V
DD
- -15 V
0 V
V
GS
-10 V
4.
7
I
D
= -20A
V
OUT
TPCA8103
2004-01-16
4
I
D
V
DS
I
D
V
DS
I
D
V
GS
V
DS
V
GS
|Y
fs
| I
D
R
DS (ON)
I
D
F
o
r
w
ar
d t
r
a
n
sfe
r
ad
mittan
c
e
Y
fs
(S)
D
r
ain
-
so
urc
e
v
o
lt
a
ge
V
DS
(V
)
Drain-source voltage VDS (V)
D
r
ain
cu
rre
nt I
D
(
A
)
Drain-source voltage VDS (V)
D
r
ain
cu
rre
nt
I D
(
A
)
Gate-source voltage VGS (V)
D
r
ain
cu
rre
nt
I D
(
A
)
Gate-source voltage VGS (V)
Drain current ID (A)
Drain current ID (A)
D
r
ain
-
so
urc
e
O
N
r
e
si
stanc
e
R
DS (
O
N
)
(
m
)
-4
-6
-8
-10
Common source
VDS = -10 V
Pulse test
0
-40
-60
-80
-100
-20
0
-2
100
Ta
= -55C
25
0.1
-0.1
-1
-10
-100
1
10
100
Common source
VDS = -10 V
Pulse test
Ta
= -55C
100
25
0
-10
-20
-30
-40
-50
-2
-3
-4
-5
0
-1
0
0
-10
-8
-6
-4
-2.8
-3
-2.6
-2.2
-2.4
VGS = -2 V
Common source
Ta
= 25C
Pulse test
-0.4
-0.6
-0.8
-1.0
0
-40
-60
-80
-100
-20
0
-0.2
-3.2
-6
-8
-10
-3.1
-4
-3.0
-2.6
VGS = -2.4 V
-2.8
Common source
Ta
= 25C
Pulse test
-8
-12
-16
-20
0
-0.2
-0.3
-0.4
-0.5
-0.1
0
-4
ID = -40 A
-10
-20
Common source
Ta
= 25C
Pulse test
-100
0.1
-0.1
-1
-10
1
10
100
-10
VGS = -4 V
Common source
Ta
= 25C
Pulse test
TPCA8103
2004-01-16
5
R
DS (ON)
Ta
I
DR
V
DS
Capacitance V
DS
V
th
Ta
Gate
th
res
hol
d vol
t
a
g
e
V
th
(
V
)
Ambient temperature Ta (C)
D
r
ain
-
so
urc
e
O
N
r
e
si
stanc
e
R
DS
(
O
N)
(m
)
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
C
apacit
anc
e
C
(p
F)
Ambient temperature Ta (C)
Drai
n
-
s
o
urc
e
v
o
l
t
a
ge V
DS
(V)
Total gate charge Qg (nC)
Drain
re
v
e
r
s
e c
u
r
r
e
n
t
I DR
(
A
)
100
-0.1
-1
-10
-100
1000
10000
100000
Crss
Coss
Ciss
Common source
VGS = 0 V
f
= 1 MHz
Ta
= 25C
-1.2
0
-80
-40 0 40
120
160
80
-0.4
-0.8
-1.6
-2.0
Common source
VDS = -10 V
ID = -1 mA
Pulse test
0
-80
-40 0 40
120
160
80
5
15
20
ID = -40 A, -20 A, -10 A
ID = -40 A, -20 A, -10 A
VGS = -4 V
-10 V
Common source
Pulse test
10
0
-0.1
-1
-10
-1000
0.2 0.4 0.6 0.8 1.0 1.2
VGS = 0 V
-1
-10
-5
-3
Common source
Ta
= 25C
Pulse test
-100
Dynamic input/output characteristics
G
a
t
e
-
s
our
ce
vo
l
t
a
g
e
V
GS
(
V
)
0
-10
-20
-30
0
40
80 120 160
Common source
ID = -13 A
Ta
= 25C
Pulse test
VDD = -24 V
VDS
VGS
-30
-20
0
-10
240
VDD = -24 V
-12
-12
-6
-6
200
TPCA8103
2004-01-16
6
1
10
100
1000
0.1
10
1
0.1
100
1
0.001
10
100
1000
0.01 0.1 1 10 100 1000
(2)
(1)
(3)
0.1
3
2
0
0 40 80 120
1.5
2.5
160
1
0.5
(1)
(2)
50
40
30
20
10
0
0 40 80 120
160
T
R
A
N
S
I
EN
T
T
H
ER
M
A
L
I
M
P
E
D
A
N
C
E
r
th (
/W
)
CASE TEMPERATURE Tc (C)
P
D
Tc
DR
A
I
N
P
O
WE
R
D
I
S
S
IP
A
T
IO
N
P
D
(W
)
PULSE WIDTH t
w
(s)
AMBIENT TEMPERATURE Ta (C)
P
D
Ta
DRA
I
N
P
O
W
E
R
DI
S
S
I
P
A
TIO
N
P
D
(W
)
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Tc=25
(1)Device mounted on a
glass-epoxy board(a) (Note 2a)
(2)Device mounted on a
glass-epoxy board(b) (Note 2b)
10s
r
th
t
w
SINGLE PULSE
D
R
A
I
N C
U
RRE
NT
I
D
(
A
)
DRAIN-SOURCE VOLTAGE V
DS
(V)
SAFE OPERATING AREA
1
10
100
1000
0.1
10
1
SINGLE NONREPETITIVE PULSE
Tc=25
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
ID max (PULSED) *
ID max (CONTINUOUS) *
t=1ms
VDSS max
0.1
t=10ms
100
DC
TPCA8103
2004-01-16
7
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
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