TPCP8201
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPCP8201
Portable Equipment Applications
Motor Drive Applications
DC-DC Converter Applications
Lead(Pb)-Free
Low drain-source ON resistance
:
R
DS
(ON)
= 38 m (typ.)
High forward transfer admittance
:|Y
fs
| = 7.0 S (typ.)
Low leakage current
:
I
DSS
= 10 A (V
DS
= 30 V)
Enhancement mode
:
V
th
= 1.3 to 2.5 V (V
DS
= 10 V, I
D
= 1mA)
Maximum Ratings
(Ta
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
30 V
Drain-gate voltage (R
GS
= 20 k) V
DGR
30 V
Gate-source voltage
V
GSS
20 V
DC (Note 1)
I
D
4.2
Drain current
Pulse (Note 1)
I
DP
16.8
A
Single-device operation
(Note 3a)
P
D (1)
1.48
Drain power
dissipation
(t
= 5 s)
(Note 2a)
Single-device value at
dual operation
(Note 3b)
P
D (2)
1.23
Single-device operation
(Note 3a)
P
D (1)
0.58
Drain power
dissipation
(t
= 5 s)
(Note 2b)
Single-device value at
dual operation
(Note 3b)
P
D (2)
0.36
W
Single pulse avalanche energy
(Note 4)
E
AS
2.86
mJ
Avalanche current
I
AR
2.1
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
E
AR
0.12
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55~150 C
Note: For Notes 1 to 6, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-3V1G
Weight: 0.017 g (typ.)
Circuit Configuration
Marking
(Note 6)
8201
1 2 3 4
8 7 6 5
Lot No.
1
2
3
4
8
7
6
5
0.330.05
0.28+0.1
-0.11
1.12+0.13
-0.12
2.4
0
.
1
0.475
0.65
2
.
8
0.1
A
0.05
M
2.90.1
4
1
5
8
0.80.05
0.170.02
B
B
0.05
M
A
S
0.025
S
1.12+0.13
-0.12
0.28+0.1
-0.11
1Source1
2Gate1
3Source2
4Gate2
5Drain2
6Drain2
7Drain1
8Drain1
TPCP8201
2004-07-06
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Single-device operation
(Note
3a)
R
th (ch-a) (1)
84.5
Thermal resistance,
channel to ambient
(t
= 5 s)
(Note 2a) Single-device value at
dual operation (Note 3b)
R
th (ch-a) (2)
101.6
C/W
Single-device operation
(Note
3a)
R
th (ch-a) (1)
215.5
Thermal resistance,
channel to ambient
(t
= 5 s)
(Note 2b) Single-device value at
dual operation (Note 3b)
R
th (ch-a) (2)
347.2
C/W
Note 1: The channel temperature should not exceed 150C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: a) The power dissipation and thermal resistance values shown are for a single device.
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values shown are for a single device.
(During dual operation, power is evenly applied to both devices.)
Note 4: V
DD
= 24 V, T
ch
= 25C (initial), L = 0.5 mH, R
G
= 25 , I
AR
= 2.1 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature.
Note 6: on the lower left of the marking indicates Pin 1.
Weekly code (3 digits):
FR-4
25.4
25.4 0.8
(Unit:
mm)
(b)
FR-4
25.4
25.4 0.8
(Unit:
mm)
(a)
25.4
25.
4
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
TPCP8201
2004-07-06
3
Electrical Characteristics
(Ta = 25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
10 A
Drain cut-off current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10 A
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
30
Drain-source breakdown
voltage
V
(BR) DSX
I
D
= 10 mA, V
GS
= -20 V
15
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
1.3
2.5 V
V
GS
= 4.5 V, I
D
= 2.1 A
58 77
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 2.1 A
38 50
m
Forward transfer admittance
|Y
fs
| V
DS
= 10 V, I
D
= 2.1 A
3.5 7.0
S
Input capacitance
C
iss
470
Reverse transfer capacitance
C
rss
60
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
80
pF
Rise time
t
r
5.2
Turn-on time
t
on
8.3
Fall time
t
f
4.0
Switching time
Turn-off time
t
off
Duty <= 1%, t
w
= 10 s
22
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
10
Gate-source charge 1
Q
gs1
1.7
Gate-drain ("miller") charge
Q
gd
V
DD
24 V, V
GS
= 10 V, I
D
= 6 A
2.4
nC
Source-Drain Ratings and Characteristics
(Ta =
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
16.8 A
Forward voltage (diode)
V
DSF
I
DR
= 4.2 A, V
GS
= 0 V
-1.2 V
R
L
=
7.
14
V
DD
- 15 V
0 V
V
GS
10 V
4.
7
I
D
= 2.1 A
V
OUT
TPCP8201
2004-07-06
4
Drain current I
D
(A)
R
DS (ON)
I
D
Dr
a
i
n
-
s
our
c
e
O
N
r
e
s
i
s
t
anc
e
R
DS (O
N)
(
m
)
Gate
-source voltage V
GS
(V)
I
D
V
GS
D
r
a
i
n
c
u
rr
ent
I
D
(A)
Common source
VDS = 10 V
Pulse test
Ta
= -55C
25
100
Dr
a
i
n
-
s
our
c
e
v
o
l
t
ag
e
V
DS
(
V
)
Gate-source voltage V
GS
(V)
V
DS
V
GS
Drain
-source voltage V
DS
(V)
I
D
V
DS
D
r
ain
c
u
rr
ent
I
D
(A)
5
4
2
1
0
VGS = 2.8 V
Common source
Ta
= 25C
Pulse test
3.2
4.5
3.0
3.8
6.0
3.5
10
3
Drain
-source voltage V
DS
(V)
I
D
V
DS
D
r
a
i
n
c
u
rr
ent
I
D
(
A
)
Drain current I
D
(A)
Y
fs
I
D
F
o
rw
ar
d t
r
an
s
f
er
adm
i
t
t
anc
e
Y
fs
(S
)
VGS = 2.8 V
Common source
Ta
= 25C
Pulse test
3.8
6.0
4.5
3.0
10
3.5
3.2
ID = 4A
Common source
Ta
= 25
Pulse test
2
1
Common source
VDS = 10 V
Pulse test
25
100
Ta
= -55C
10
0.1
1
10
30
100
Common source
Ta
= 25C
Pulse test
VGS = 10V
4.5
0
0.8
1.0
0.2
0.4
0.6
8.0
8.0
10
8
4
2
0
6
0
4
5
1
2
3
0
0
4
5
1
2
3
8
6
2
4
0
0
8
10
2
4
6
2.0
1.6
0.8
0.4
1.2
0.1
0
10
1
0.3
1
3
100
10
TPCP8201
2004-07-06
5
Drain
-source voltage V
DS
(V)
Capacitance V
DS
C
a
pac
it
a
n
c
e C
(
p
F
)
0.1
1
10
100
1000
1 3
5
10 30
50 100
Common source
VGS = 0 V
f
= 1 MHz
Ta
= 25C
Ciss
Coss
Crss
Ambient temperature Ta (C)
R
DS (ON)
Ta
Dr
a
i
n
-
s
o
urc
e
O
N
res
i
s
t
anc
e
R
DS
(
O
N
)
(
m
)
Drain-source voltage V
DS
(V)
I
DR
V
DS
D
r
ai
n r
e
v
e
r
s
e
c
u
rr
e
n
t
I
DR
(
A
)
G
a
te
th
r
e
sh
o
l
d
vo
l
t
a
g
e
V
th
(V)
Ambient temperature Ta (C)
V
th
Ta
0
1
3
-80
-40 0 40 80 120 160
Common source
VDS = 10 V
ID = 200A
Pulse test
2
160
-40 0 40 80 120
-80
Common source
Pulse test
120
80
40
0
ID = 4A
2A
VGS = 10V
VGS = 4.5V
ID = 4, 2, 1A
1A
0
0.1
Common source
Ta
= 25C
Pulse test
-0.2
0.3
0.5
1
3
5
10
-0.6 -0.8
-1.2
VGS = 0 V
5.0
3.0
1.0
10
-0.4
-1.0
Gat
e
-
s
ourc
e
v
o
lt
age
V
GS
(
V
)
Total gate charge Q
g
(nC)
Dynamic input/output
characteristics
Dr
a
i
n
-
so
u
r
ce
vo
l
t
a
g
e
V
DS
(
V
)
0 4 8
Common source
ID = 4.0A
Ta
= 25C
Pulse test
VDD = 24V
VDS
VGS
12
16
20
10
0
15
10
0
5
15
12
6
24
12
VDD = 6V
5
100
60
20
30
25
0.3
D
r
ain
po
w
e
r
di
s
s
ip
at
ion
P
D
(
W
)
Ambient temperature Ta (C)
P
D
Ta
2.0
0.8
0
0 25 50
125
150
0.4
1.2
1.6
200
(1)
(2)
(3)
(4)
75
100
175
Device mounted on a glass-epoxy
board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation
(Note 3b)
Device mounted on a glass-epoxy
board (b)
(Note 2b)
(3) Single-device operation
(Note
3a)
(4) Single-device value at dual
operation
(Note 3b)
t = 5 s
TPCP8201
2004-07-06
6
r
th
t
w
Pulse width t
w
(s)
1
0.001
10
100
1000
0.01 0.1 1 10 100 1000
(1)
(2)
(3)
(4)
Single pulse
T
r
ans
ien
t
t
her
m
a
l
im
p
edanc
e
r
th
(
/W
)
Drain
-source voltage V
DS
(V)
Safe operating area
10
0.1
100
10
1
100
ID max (Pulse) *
10 ms *
1 ms *
VDSS
max
D
r
ain
c
u
rre
n
t
I
D
(
A
)
1
0.1
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
* Single
pulse
Ta
= 25C
Curves must be derated linearly
with increase in temperature.
TPCP8201
2004-07-06
7
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
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