TPCP8401
2002-09-09
1
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type
(P Channel U-MOS / N Channel U-MOS)
TPCP8401
Motor Dreive
Notebook PC
Portable Machines and Tools
Low drain-source ON resistance: P Channel R
DS (ON)
= 31 m (typ.)
N Channel R
DS (ON)
= 20 m (typ.)
High forward transfer admittance: P Channel |Y
fs
| = S (typ.)
N Channel |Y
fs
| = S (typ.)
Low leakage current:
P Channel I
DSS
= -10 A (V
DS
= -30 V)
N Channel I
DSS
= 10 A (V
DS
= 30 V)
Enhancement-mode
: P Channel V
th
= -0.8~-2.0 V (V
DS
= -10 V, I
D
= -1 mA)
: N Channel V
th
= 1.3~2.5 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
=
=
=
25C)
Rating
Characteristics Symbol
P Channel N Channel
Unit
Drain-source voltage
V
DSS
-
30 30 V
Drain-gate voltage (R
GS
=
20 k
) V
DGR
-
30 30 V
Gate-source voltage
V
GSS
20
20 V
DC (Note
1)
I
D
-
3.5 4.5
Drain current
Pulse (Note
1)
I
DP
-14
18
A
Single-device operation
(Note
3a)
P
D(1)
TBD TBD
Drain power
dissipation
(t
=
10s)
(Note 2a)
Single-device value at
dual operation
(Note 3b)
P
D(2)
TBD TBD
Single-device operation
(Note
3a)
P
D(1)
TBD TBD
Drain power
dissipation
(t
=
10s)
(Note 2b)
Single-device value at
dual operation
(Note 3b)
P
D(2)
TBD
TBD
W
Single pulse avalanche energy
E
AS
2.0
(Note 4a)
3.3
(Note 4b)
mJ
Avalanche current
I
AR
-
1.75 2.25 A
Repetitive avalanche energy
Single-device value at operation
(Note 2a, 3b, 5)
E
AR
TBD
mJ
Channel temperature
T
ch
150 C
Storage temperature range
T
stg
-
55~150 C
Note: (Note 1), (Note 2ab), (Note 3ab), (Note 4), (Note 5) Please see next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
5
6
8
7
Circuit Configuration
TOSHIBA
0.05
0.05
1.6 -
0
.1
0.7
0.05
2.90.2
2.8 -
0
.3
0.95
0.16
0.05
1
4
3
6
+0.2
+0.2
0.95
2.90.1
0.3
+0.1-0.05
2.
4
0.
1
2.
8
0.
1
0.65
1
1
1
1
4
4
4
4
5
5
5
5
8
8
8
8
0.
24
0.
10
-
0.
09
0.475
0.025 M A
A
0.80.05
S
0.05 S
1.
16 +
0
.
05
-
0.
15
1.
16 +
0
.
05
-
0.
15
1SOURCE1 5DRAIN2
2GATE1
6DRAIN2
3SOURCE2
7DRAIN1
4GATE2
8DRAIN1
1
2
3
4
8
7
6
5
Drain power
dissipation
(t
=
10s)
(Note 2a)
N-ch P-ch
Preliminary
TPCP8401
2002-09-09
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Single-device operation
(Note 3a)
R
th (ch-a) (1)
TBD
Thermal resistance, channel to ambient
(t
=
10s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (2)
TBD
Single-device operation
(Note 2a)
R
th (ch-a) (1)
TBD
Thermal resistance, channel to ambient
(t
=
10s)
(Note 2b) Single-device value at
dual operation
(Note 2b)
R
th (ch-a) (2)
TBD
C/W
Marking
Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b) Device mounted on a glass-epoxy board (b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4:
a) V
DD
=
-
24 V, T
ch
=
25C (Initial), L
=0.5
mH, R
G
=
25
, I
AR
=
-1.75
A
b) V
DD
=
24 V, T
ch
=
25C (Initial), L
=0.5
mH, R
G
=
25
, I
AR
=
2.25 A
Note 5: Repetitive rating; pulse width limited by max channel temperature.
Note 6:
on lower left of the marking indicates Pin 1.
FR-4
25.4
25.4
0.8
(Unit: mm)
(a)
FR-4
25.4
25.4
0.8
(Unit: mm)
(b)
TPCP8401
2002-09-09
3
P-ch
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
16 V, V
DS
=
0 V
10
A
Drain cut-OFF current
I
DSS
V
DS
=
-
30 V, V
GS
=
0 V
-
10
A
V
(BR) DSS
I
D
=
-
10 mA, V
GS
=
0 V
-
30
Drain-source breakdown voltage
V
(BR) DSX
I
D
=
-
10 mA, V
GS
=
20 V
-
15
V
Gate threshold voltage
V
th
V
DS
=
-
10 V, I
D
=
-
1 mA
-0.8
-
2.0 V
V
GS
=
-
4 V, I
D
=
-
1.75 A
43 56
Drain-source ON resistance
R
DS (ON)
V
GS
=
-
10 V, I
D
=
-
1.75 A
31 40
m
Forward transfer admittance
|Y
fs
| V
DS
=
-
10 V, I
D
=
-
1.75 A
TBD TBD
S
Input capacitance
C
iss
TBD
Reverse transfer capacitance
C
rss
TBD
Output capacitance
C
oss
V
DS
=
-
10 V, V
GS
=
0 V, f
=
1 MHz
TBD
pF
Rise time
t
r
TBD
Turn-ON time
t
on
TBD
Fall time
t
f
TBD
Switching time
Turn-OFF time
t
off
Duty
<
=
1%, t
w
=
10
s
TBD
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
TBD
Gate-source charge 1
Q
gs
1
TBD
Gate-drain ("miller") charge
Q
gd
V
DD
- -
24 V, V
GS
=
-
10 V,
I
D
=
-
3.5 A
TBD
nC
Source-Drain Ratings and Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
-
14 A
Forward voltage (diode)
V
DSF
I
DR
=
-
3.5 A, V
GS
=
0 V
1.2 V
R
L
=
6.8
V
DD
- -
15 V
-
10 V
V
GS
0 V
4.
7
I
D
=
-1.75
A
V
OUT
TPCP8401
2002-09-09
4
N-ch
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
16 V, V
DS
=
0 V
10
A
Drain cut-OFF current
I
DSS
V
DS
=
30 V, V
GS
=
0 V
10
A
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
30
Drain-source breakdown voltage
V
(BR) DSX
I
D
=
10 mA, V
GS
=
-
20 V
15
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
1 mA
1.3
2.5 V
V
GS
=
4.5 V, I
D
=
2.25 A
30 39
Drain-source ON resistance
R
DS (ON)
V
GS
=
10 V, I
D
=
2.25 A
20 26
m
Forward transfer admittance
|Y
fs
| V
DS
=
10 V, I
D
=
2.25 A
TBD TBD
S
Input capacitance
C
iss
TBD
Reverse transfer capacitance
C
rss
TBD
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
TBD
pF
Rise time
t
r
TBD
Turn-ON time
t
on
TBD
Fall time
t
f
TBD
Switching time
Turn-OFF time
t
off
Duty
<
=
1%, t
w
=
10
s
TBD
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
TBD
Gate-source charge 1
Q
gs
1
TBD
Gate-drain ("miller") charge
Q
gd
V
DD
-
24 V, V
GS
=
10 V,
I
D
=
4.5 A
TBD
nC
Source-Drain Ratings and Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
18 A
Forward voltage (diode)
V
DSF
I
DR
=
4.5 A, V
GS
=
0 V
-
1.2 V
R
L
=
5.0
V
DD
-
15 V
0 V
V
GS
10 V
4.
7
I
D
=
2.25 A
V
OUT
TPCP8401
2002-09-09
5
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
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Handbook" etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
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The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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