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Электронный компонент: U1DL49

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U1DL49
2001-07-11
1
CODE TYPE
RD U1DL49
TOSHIBA HIGH EFFICIENCY RECTIFIER (HED) SILICON EPITAXIAL JUNCTION TYPE
U1DL49
SWITCHING MODE POWER SUPPLY APPLICATIONS


l Repetitive Peak Reverse Voltage : V
RRM
= 200V
l Average Forward Current
: I
F (AV)
= 1.0A
l Very Fast Reverse-Recovery Time : t
rr
= 60ns (Max)
l Low Forward Voltage
: V
FM
= 0.98V (Max)
l Available to Reduce Switching Losses and Output Noise
MAXIMUM RATINGS
(Ta = 25C)
CHARACTERISTIC SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V
RRM
200 V
Average Forward Current
I
F (AV)
1.0 A
15 (50Hz)
Peak One Cycle Surge Forward
Current (Non-Repetitive)
I
FSM
16.5 (60Hz)
A
Junction Temperature
T
j
-40~150 C
Storage Temperature Range
T
stg
-40~150 C
ELECTRICAL CHARACTERISTICS
(Ta = 25C)
CHARACTERISTIC SYMBOL TEST
CONDITION MIN
TYP.
MAX
UNIT
Peak Forward Voltage
V
FM
I
FM
= 1.0A
0.98
V
Repetitive Peak Reverse Current
I
RRM
V
RRM
= 200V
10 A
Reverse Recovery Time
(Note 1)
t
rr
I
F
= 1A, di / dt = -20A / s
60 ns
Forward Recovery Time
(Note 2)
t
fr
I
F
= 1.0A
100
ns
Thermal Resistance
R
th (j-a)
Junction to Ambient
125
C
/
W
Note 1: t
rr
TEST CIRCUIT
Note 2: t
fr
TEST CIRCUIT
MARKING
WAVEFORM WAVEFORM
JEDEC
JEITA
TOSHIBA 3-5E1A
Weight: 0.05g
Unit: mm
U1DL49
2001-07-11
2
U1DL49
2001-07-11
3

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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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RESTRICTIONS ON PRODUCT USE