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Электронный компонент: USM16J48

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SM16(G,J)48,USM16(G,J)48,SM16(G,J)48A,USM16(G,J)48A
2001-07-13
1
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM16G48,USM16G48,SM16J48,USM16J48
SM16G48A,USM16G48A,SM16J48A,USM16J48A
AC POWER CONTROL APPLICATIONS


l Repetitive Peak Off-State Voltage :V
DRM
=400, 600V
l R.M.S On-State Current
:I
T (RMS)
=16A
l Gate Trigger Current
:I
GT
=30mA Max.
:I
GT
=20mA Max. ("A"Type)
Unit in mm
SM16G48, SM16J48, SM16G48A, SM16J48A
USM16G48, USM16J48, USM16G48A, USM16J48A
JEDEC
JEDEC
JEITA
JEITA
TOSHIBA
13-10J1A
TOSHIBA
13-10J2A
Weight : 1.7g
MARKING
NUMBER SYMBOL
MARK
SM16G48, SM16G48A, USM16G48, USM16G48A
M16G48
*1
SM16J48, SM16J48A, USM16J48, USM16J48A
M16J48
*2
TYPE
SM16G48A,SM16J48A,USM16G48A,USM16J48A A
*3
Example
8A : January 1998
8B : February 1998
8L : December 1998

SM16(G,J)48,USM16(G,J)48,SM16(G,J)48A,USM16(G,J)48A
2001-07-13
2
MAXIMUM RATINGS
(Ta=25
C
)
CHARACTERISTIC SYMBOL
RATING
UNIT
(U)SM12G48
(U)SM12G48A
400
Repetitive Peak
Off-State Voltage
(U)SM12J48
(U)SM12J48A
V
DRM
600
V
R.M.S On-State Current
I
T (RMS)
16 A
150 (50Hz)
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I
TSM
165 (60Hz)
A
I
2
t Limit Value
I
2
t 112.5
A
2
s
Critical Rate of Rise of On-State
Current (Note
1)
di /dt
50
A /
ms
Peak Gate Power Dissipation
P
GM
5 W
Average Gate Power Dissipation
P
G (AV)
0.5 W
Peak Forward Gate Voltage
V
GM
10 V
Peak Forward Gate Current
I
GM
2 A
Junction Temperature
T
j
-40~125 C
Storage Temperature Range
T
stg
-40~125 C
ELECTRICAL CHARACTERISTICS
(Ta=25
C
)
CHARACTERISTIC SYMBOL
TEST
CONDITION
MIN.
TYP.
MAX.
UNIT
Repetitive Peak Off-State Current
I
DRM
V
DRM
=Rated
20
mA
I T2
(
+) , Gate (+)
1.5
II T2
(
+) , Gate (-)
1.5
III T2
(
-) , Gate (-)
1.5
Gate Trigger Voltage
IV
V
GT
V
D
=12V
R
L
=20
W
T2 (
-) , Gate (+)
V
I T2
(
+) , Gate (+)
30
II T2
(
+) , Gate (-)
30
III T2
(
-) , Gate (-)
30
(U)SM16G48
(U)SM16J48
IV T2
(
-) , Gate (+)
50
I T2
(
+) , Gate (+)
20
II T2
(
+) , Gate (-)
20
III T2
(
-) , Gate (-)
20
Gate Trigger
Current
(U)SM16G48A
(U)SM16J48A
IV
I
GT
V
D
=12V
R
L
=20
W
T2 (
-) , Gate (+)
mA
Peak On-State Voltage
V
TM
I
TM
=17A
1.5
Gate Non-Trigger Voltage
V
GD
V
D
=Rated, Tc=125C
0.2
V
Holding Current
I
H
V
D
=12V, I
TM
=1A
50 mA
Thermal Resistance
R
th (j-c)
Junction to Case, AC
2.0
C
/
W
(U)SM16G48
(U)SM16J48
300
Critical Rate of Rise of
Off-State Voltage
(U)SM16G48A
(U)SM16J48A
dv / dt
V
DRM
=Rated, T
j
=125C
Exponential Rise
200
V /
ms
(U)SM16G48
(U)SM16J48
10
Critical Rate of Rise of
Off-State Voltage at
Commutation
(U)SM16G48A
(U)SM16J48A
(dv / dt) c
V
DRM
=400V, T
j
=125C
(di / dt) c=-8.7A / ms
4
V /
ms
Note 1 : V
DRM
=0.5Rated
I
TM
25A
t
gw
10
ms
t
gr
250ns
i
gp
=I
GT
2.0
SM16(G,J)48,USM16(G,J)48,SM16(G,J)48A,USM16(G,J)48A
2001-07-13
3


SM16(G,J)48,USM16(G,J)48,SM16(G,J)48A,USM16(G,J)48A
2001-07-13
4


SM16(G,J)48,USM16(G,J)48,SM16(G,J)48A,USM16(G,J)48A
2001-07-13
5

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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
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Handbook" etc..
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The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE