SM3G48,USM3G48,SM3J48,USM3J48
2001-07-13
1
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR
SILICON PLANAR TYPE
SM3G48,USM3G48,SM3J48,USM3J48
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off-State Voltage
: V
DRM
=400, 600V
l R.M.S On-State Current
: I
T (RMS)
=3A
l Gate Trigger Current
: I
GT
=20mA Max.
Unit in mm
SM3G48, SM3J48
USM3G48, USM3J48
JEDEC
JEDEC
JEITA
JEITA
TOSHIBA
13-10J1A
TOSHIBA
13-10J2A
Weight : 1.7g
MARKING
NUMBER SYMBOL
MARK
SM3G48, USM3G48
M3G48
*1 TYPE
SM3J48, USM3J48
M3J48
*2
Example
8A : January 1998
8B : Febrary 1998
8L : December 1998
SM3G48,USM3G48,SM3J48,USM3J48
2001-07-13
2
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL
RATING
UNIT
(U)SM3G48 400
Repetitive Peak
Off-State Voltage
(U)SM3J48
V
DRM
600
V
R.M.S On-State Current
I
T (RMS)
3 A
30 (50Hz)
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I
TSM
33 (60Hz)
A
I
2
t Limit Value
I
2
t 4.5
A
2
s
Critical Rate of Rise of On-State
Current (Note
1)
di / dt
50
A /
ms
Peak Gate Power Dissipation
P
GM
5 W
Average Gate Power Dissipation
P
G (AV)
0.5 W
Peak Forward Gate Voltage
V
GM
10 V
Peak Forward Gate Current
I
GM
2 A
Junction Temperature
T
j
-40~125 C
Storage Temperature Range
T
stg
-40~125 C
ELECTRICAL CHARACTERISTICS
(Ta=25C)
CHARACTERISTIC SYMBOL
TEST
CONDITION
MIN.
TYP.
MAX.
UNIT
Repetitive Peak Off-State Current
I
DRM
V
DRM
=Rated
20
mA
I T2
(
+), Gate (+)
1.5
II T2
(
+), Gate (-)
1.5
III T2
(
-), Gate (-)
1.5
Gate Trigger Voltage
IV
V
GT
V
D
=12V
R
L
=20
W
T2 (
-), Gate (+)
V
I T2
(
+), Gate (+)
20
II T2
(
+), Gate (-)
20
III T2
(
-), Gate (-)
20
Gate Trigger Current
IV
I
GT
V
D
=12V
R
L
=20
W
T2 (
-), Gate (+)
mA
Peak On-State Voltage
V
TM
I
TM
=4.5A
1.5 V
Gate Non-Trigger Voltage
V
GD
V
D
=Rated, Tc=125C
0.2
V
Holding Current
I
H
V
D
=12V, I
TM
=1A
30 mA
Thermal Resistance
R
th (j-c)
Junction to Case, AC
3.6
C
/
W
Critical Rate of Rise of Off-State
Voltage
dv / dt
V
DRM
=Rated, T
j
=125C
Exponential Rise
300 V
/
ms
Critical Rate of Rise of Off-State
Voltage at Commutation
(dv / dt) c
V
DRM
=400V, T
j
=125C
(di /dt) c=
-2.0A / ms
10
V
/
ms
Note 1 : V
DRM
=0.5Rated
I
TM
4.5A
t
gw
10
m
s
t
gr
250ns
i
gp
=I
GT
2.0
SM3G48,USM3G48,SM3J48,USM3J48
2001-07-13
5
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
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document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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