T r i p a t h T e c h n o l o g y, I n c . - T e c h n i c a l I n f o r m a t i o n
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TP2150B - MC/ 1.7/06.04
TP2150B
DUAL HIGH SIDE AND LOW SIDE MOSFET DRIVER
T e c h n i c a l I n f o r m a t i o n R e v i s i o n 1 . 7 J u n e 2 0 0 4
GENERAL DESCRIPTION
The TP2150B is a high speed, dual high side and low side MOSFET driver. The TP2150B level shifts CMOS
or TTL input levels to gate signals for driving high voltage and high current MOSFETs in a dual half bridge or
single full bridge configuration. The built in bootstrap circuitry allows for the high side to drive an N-channel
power MOSFET
.
Applications
Switch mode audio power amplifier
Switch mode power supply
MOSFET driver
Benefits
Reduced system cost with smaller/less
expensive power supply and heat sink
Signal fidelity equal to high quality Class-AB
amplifiers when paired with Tripath TC2001
Floating reference high side driver allows for N
channel output power MOSFETs on the high
side.
Features
Pin Compatible with Tripath TP2350B
Supports wide range of power supplies
Built in switching regulator driver to power the
gate drive circuitry (VN10)
Over-current protection
Over-temperature protection
T r i p a t h T e c h n o l o g y, I n c . - T e c h n i c a l I n f o r m a t i o n
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TP2150B - MC/ 1.7/06.04
BLOCK DIAGRAM
FAULT
THERMAL
SHUTDOW N
Level
Shift
Down
Under
Voltage
Level
Shift
Up
VN10
High Side
Overcurrent
Sense
Low Side
Overcurrent
Sense
VNN
AGND
AGND
YX
YXB
3.6K
3.6K
+10V
-10V
V5
V5
YX
YXB
AGND
CSS
SMPSO
SW -FB
OCDX
OCSXHP
OCSXHN
OCSXLP
OCSXLN
VNN
VBOOTX
HOX
HOXCOM
VN10
LOX
LOXCOM
V5
AGND
I
H
I
L
I
H
I
L
+
T r i p a t h T e c h n o l o g y, I n c . - T e c h n i c a l I n f o r m a t i o n
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TP2150B - MC/ 1.7/06.04
Absolute Maximum Ratings TP2150B
(Note 3)
SYMBOL PARAMETER
Value
UNITS
VPP, VNN
Supply Voltage
+/- 65
V
VN10
Voltage for FET drive
VNN+13
V
V5
5V power supply
6
V
T
STORE
Storage Temperature Range
-55 to 150
C
T
A
Operating Free-air Temperature Range (Note 4)
-40 to 85
C
T
J
Junction
Temperature
150
C
ESD
HB
ESD Susceptibility Human Body Model (Note 5)
All pins
2000
V
ESD
MM
ESD Susceptibility Machine Model (Note 6)
All pins
200
V
V
LOGIC
Voltage input on logic pins (pins 9,13,14,16,17)
-0.3 to (V5+0.3)
V
V
OCSH
Voltage input on MOSFET high side overcurrent detect pins (pins
33,34,50,51)
VPP V
V
OCSL
Voltage input on MOSFET low side overcurrent detect pins (pins
30,31,53,54)
VNN V
V
BOOT
Voltage input on VBOOT1 and VBOOT2 pins (pins 27,57)
VPP+12
V
Note 3: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
See the table below for Operating Conditions.
Note 4: This is a target specification. Characterization is still needed to validate this temperature range.
Note 5: Human body model, 100pF discharged through a 1.5K
resistor.
Note 6: Machine model, 220pF 240pF discharged through all pins.
Thermal Characteristics TP2150B
SYMBOL PARAMETER
Value
UNITS
JA
Junction-to-air Thermal Resistance
35
C/W
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TP2150B - MC/ 1.7/06.04
Electrical Characteristics TP2150B
(Note 7)
T
A
= 25
C. Unless otherwise noted, the supply voltage is VPP=|VNN|=45V.
SYMBOL PARAMETER
CONDITIONS MIN.
TYP.
MAX.
UNITS
I
q
Quiescent Current
(No load, BBM0=1,BBM1=0,
Mute = 0V)
VPP = +45V
VNN = -45V (using external VN10)
VNN = -45V (using SMPSO pin to
drive IRFL9110 for generating
VN10)
VN10 = 10V
V5 = 5V
30
30
65
100
10.5
55
45
75
110
15
mA
mA
mA
mA
mA
V
IH
Logic High Input Voltage
V5-1
V
V
IL
Logic Low Input Voltage
1
V
I
IN
Input Current for logic inputs
50
500
nA
R
DS
MOSFET On Resistance (high
side)
I
OUT
= 50mA VN10=10V
53
R
DS
MOSFET On Resistance (low side) I
IN
= 50mA VN10=10V
2
I
PK
Peak Output Current
200
mA
Q
G
Gate Charge Drive Capability
35
nC
V
OUT
Output Voltage for OCD pins
V
IN
= 0.5V between OCSXXX pins
(i.e. pins 51 and 50, pins 53 and
54, pins 33 and 34, pins 30 and 31)
1.2 1.5
V
I
BIASOCD
V
IN
= 0V between OCSXXX pins
(i.e. pins 51 and 50, pins 53 and
54, pins 33 and 34, pins 30 and 31)
10 20
uA
Note 7: Minimum and maximum limits are guaranteed but may not be 100% tested.
Operating Conditions TP2150B
(Note 8)
SYMBOL PARAMETER MIN.
TYP.
MAX.
UNITS
VPP, VNN
Supply Voltage
+/- 15
+/-45
+/- 65
V
VN10
Voltage for FET drive (Volts above VNN)
9
10
12
V
V5
5V power supply
4.5
5
5.5
V
T
R
Rise Time (Low Side Driver with no load)
8
nS
T
F
Fall Time (Low Side Driver with no load)
35
nS
T
D1
Rise Time Delay (Low Side Driver with no load)
190
nS
T
D2
Fall Time Delay (Low Side Driver with no load)
135
nS
T
R
Rise Time (High Side Driver with no load)
2
nS
T
F
Fall Time (High Side Driver with no load)
30
nS
T
D1
Rise Time Delay (High Side Driver with no load)
160
nS
T
D2
Fall Time Delay (High Side Driver with no load)
140
nS
Note 8: Recommended Operating Conditions indicate conditions for which the device is functional.
See Electrical Characteristics for guaranteed specific performance limits.
T r i p a t h T e c h n o l o g y, I n c . - T e c h n i c a l I n f o r m a t i o n
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TP2150B - MC/ 1.7/06.04
Timing Diagram for Low Side Driver
INPUT
(Y1B, Y2B)
OUTPUT
(LO1, LO2)
5V
0V
VNN
VNN+10V
4.0V
VNN+2.8V
T
D1
T
R
T
D2
T
F
2.5V
VNN+9.6V
Timing Diagram for High Side Driver
INPUT
(Y1, Y2)
OUTPUT
(HO1, HO2)
5V
0V
HOCOM
HOCOM+10V
4.0V
HOCOM+2.8V
T
D1
T
R
T
D2
T
F
2.5V
HOCOM+9.6V
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