0.25-m XKu pHEMT 3MI
Process Data Sheet
Semiconductors for Communications, Space and Military
www.TriQuint.com
500 West Renner Road
Richardson, Texas 75080
Phone: 972-994-8200
Foundry: 972-994-4545
Email: info@triquint.com
Page 1 of 6; 9/24/02
Specifications are subject to change.
Features
0.25-m amplifier transistors
0.25-m switch transistors
0.25-m, 2-m and 4-m diodes
High-Q passives
3 MIM capacitance densities
TaN resistors
GaAs resistors
High-density interconnects
3 metal layers
Air bridges
Substrate vias
Protective overcoat
Operation up to V
d
= 9 V
Applications
Up to 20 GHz
Communications
Military
Power amplifiers
Driver amplifiers
Low-noise amplifiers
AGC amplifiers
Limiting amplifiers
Transimpedance amplifiers
Differential amplifiers
Digital and analog phase shifters
Digital and analog attenuators
Mixers (up and down converters)
Multipliers
Switches
Oscillators
General Description
The 0.25-m XKu pHEMT 3MI (3-metal-interconnect)
process utilizes T-gates in conjunction with a pHEMT ma-
terial structure. This process is optimized for high-power
applications through 20 GHz. The process demonstrates
comparable power density and gain to the 0.25-m mmW
pHEMT 3MI process at X-band frequencies and similar bias
conditions. However, the 0.25-m XKu pHEMT offers a
higher breakdown voltage allowing higher bias voltages to
be applied to deliver higher power densities. Passives in-
clude 3 thick-metal interconnect layers, precision TaN re-
sistors, GaAs resistors, through-substrate vias and 3 MIM
capacitance densities. The via-under-cap process aids in
size compaction and offers excellent grounds at higher fre-
quencies. Air bridges produce minimal interconnect capaci-
tance. The protective overcoat layer provides environ-
mental robustness.
PROTECTIVE OVERCOAT
4.0 m METAL 2
2.0 m METAL 1
2000 NITRIDE 2
MIM METAL
500 NITRIDE 1
0.75 m METAL 0
TaN RESISTOR
500 NITRIDE 0
T-GATE
ACTIVE REGION
OHMIC METAL (EXCEPT VIA)
SEMI-INSULATING GaAs SUBSTRATE
VIA UNDER CAP
0.25-m 3MI Process Cross Section
0.25-m XKu pHEMT 3MI
Process Data Sheet
Semiconductors for Communications, Space and Military
www.TriQuint.com
500 West Renner Road
Richardson, Texas 75080
Phone: 972-994-8200
Foundry: 972-994-4545
Email: info@triquint.com
Page 2 of 6; 9/24/02
Specifications are subject to change.
0.25-m XKu pHEMT 3MI
DC Characteristics
300-m FET
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0
5
10
15
Vds (V)
Ids (A)
Vgs = 0.7 V
Vgs = 0.3 V
Vgs = 0 V
Vgs = -0.3 V
Vgs = -0.7 V
Vgs = -0.9 V
Element
Parameter
Typical Value
Units
FETs
I
dss
285
mA/mm
I
max
510
mA/mm
G
m
375
mS/mm
V
bd
-21
V
V
p
-1
V
F
t (peak)
60
GHz
MIM capacitors
density
240
pF/mm
2
300
pF/mm
2
1200
pF/mm
2
Capacitors over vias
yes
TaN resistors
sheet resistance
50
V
/sq
GaAs resistors
sheet resistance
160
V
/sq
Vias
yes
Substrate
thickness
100
m
0.25-m XKu pHEMT 3MI Process Details
0.25-m XKu pHEMT 3MI
Process Data Sheet
Semiconductors for Communications, Space and Military
www.TriQuint.com
500 West Renner Road
Richardson, Texas 75080
Phone: 972-994-8200
Foundry: 972-994-4545
Email: info@triquint.com
Page 3 of 6; 9/24/02
Specifications are subject to change.
0.25-m XKu pHEMT 3MI
Minimum Noise Figure
1000-m FET @ 3 Volts, 75 mA
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
5
10
15
20
25
30
Frequency (GHz)
NFmin (dB)
0.25-m XKu pHEMT 3MI
Maximum Available Gain/Stable Gain (MAG/MSG)
1000-m FET @ 9 Volts, 75 mA
0
5
10
15
20
25
0
10
20
30
Frequency (GHz)
MAG/MSG (dB)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Stability Factor (K)
0.25-m XKu pHEMT 3MI
Process Data Sheet
Semiconductors for Communications, Space and Military
www.TriQuint.com
500 West Renner Road
Richardson, Texas 75080
Phone: 972-994-8200
Foundry: 972-994-4545
Email: info@triquint.com
Page 4 of 6; 9/24/02
Specifications are subject to change.
0.25-m XKu pHEMT 3MI
Power Tuned Load
1000-m FET @ 9 Volts, 10 GHz
15
20
25
30
35
10
15
20
25
Pin (dBm)
Pout (dBm)
20
30
40
50
60
PAE (%)
0.25-m XKu pHEMT 3MI
Efficiency Tuned Load
1000-m FET @ 9 Volts, 10 GHz
15
20
25
30
35
10
15
20
25
Pin (dBm)
Pout (dBm)
20
30
40
50
60
PAE (%)
0.25-m XKu pHEMT 3MI
Process Data Sheet
Semiconductors for Communications, Space and Military
www.TriQuint.com
500 West Renner Road
Richardson, Texas 75080
Phone: 972-994-8200
Foundry: 972-994-4545
Email: info@triquint.com
Page 5 of 6; 9/24/02
Specifications are subject to change.
Gate Pitch (m) Gate Fingers FET Sizes (m)
12 18
10
600
26 26
4
300
26 26
8
640 & 800
26 26
10
1000 & 1200
26 26
12
1440
32 32
8
800
32 32
10
1000
32 32
12
960, 1440 & 1800
FET Models Available
0.25-m XKu pHEMT 3MI
Process Data Sheet
Semiconductors for Communications, Space and Military
www.TriQuint.com
500 West Renner Road
Richardson, Texas 75080
Phone: 972-994-8200
Foundry: 972-994-4545
Email: info@triquint.com
Page 6 of 6; 9/24/02
Specifications are subject to change.
Prototyping and Development
Prototype Chip Option (PCO)
Shared mask set
Run often
Backside via process included
PCM (process control monitor) qualified
wafers
For PCO schedules, please visit
http://
www.triquint.com/prodserv/divisions/
foundry/new/proto_sched_pco.cfm
Prototype Wafer Option (PWO)
Customer-specific masks
Customer schedule
2 wafers delivered
Backside vias included
PCM (process control monitor) qualified
wafers
Process Status
0.25-m XKu pHEMT 3MI is fully released and
qualified
Contact TriQuint or visit
http://www.triquint.com/company/quality/
for more information on quality and reliability.
Manufacturing Services
Mask making
Wafer thinning
Wafer dicing
Substrate vias
DC die-sort testing
RF on-wafer testing
Final visual testing
Design Tools
Device libraries of circuit elements:
FETs
Thin-film and implanted resistors
Capacitors
Inductors
Agilent ADS design kit
MASC Library
Training
GaAs design classes:
Half-day introduction upon request
3 day technical training upon request at
the TriQuint Texas facility
Applications Services
Tiling of GDSII stream files including PCM
(process control monitor)
Design rule checking
Layout versus schematic checking
Engineering:
On-wafer DC test
On-wafer RF test
Thermal analysis
Yield enhancement
Part qualification
Failure analysis
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