E2591 10 Gb/s EML Modules
for up to 80 km Transmission
Data Sheet
February 2003
TriQuint Optoelectronics
Features
Integrated electroabsorption modulator
1.5
m wavelength - full C-band
Characterized for 10 Gb/s operation
Applicable at 10 Gb/s FEC rates
For use up to 80 km (1600 ps/nm)
Low modulation voltage
Temperature stabilized
Integral driver IC
Wavelength selectable to ITU-T standards
Ultrastable wavelength aging for DWDM
Applications
SONET/SDH applications
Ultrahigh capacity WDM system application
High-speed data communication
Digitized video
Description
The E2591 EML, with integral driver IC, is designed for
10 Gb/s DWDM or TDM transmission applications. It
integrates a CW laser with an electroabsorption modu-
lator (EML) in the same semiconductor chip. This
device can replace external modulators that are often
bulkier, more expensive, and require more drive elec-
tronics than the EML. The E2591 uses an SMP-type,
subminiature, push-on connector to handle the RF sig-
nal. The package also contains a thermoelectric cooler
(TEC), thermistor, rear-facet monitor photodiode, and
an optical isolator. The E2591 operates over distances
of 80 km.
The nominal input impedance of the E2591 is 50
.
The package is qualified to the Telcordia Technolo-
giesTM TA-TSY-000468 standard.
The E2591 is available in the full range of C-band ITU-
T wavelengths for use in DWDM systems operating at
10 Gb/s per channel. The device exhibits excellent
wavelength stability, supporting operation at 100 GHz
channel spacing over 20 years (assuming an end-of-
life aging condition of <100 pm). Typically, external
wavelength stabilization is not required in systems of
this type, using TriQuint's EML products. The package
also offers excellent stability of wavelength vs. case
temperature, with a maximum coefficient of
0.5 pm/C.
riQ
T
uin
t
SE
MIC
ON
DU
CT
OR
E2
591
10 G
b/s
La
ser
M
od
ule
2
For additional information and latest specifications, see our website: www.triquint.com
E2591 10 Gb/s EML Modules
Data Sheet
for up to 80 km Transmission
February 2003
Module Characteristics
Table 1. Module Characteristics
Pin Information
Table 2. Pin Descriptions
Note: For full details of pin functions and required bias levels for the version with the IC, refer to the Application Note, E2591 EML with Integral
Driver IC: Pin Definitions And Operation (AP02-114OCN).
Parameter
Description
Package Type
13-pin package with SMP-type connector RF input.
Fiber
Standard single-mode fiber.
Fiber Length
To be specified.
Connector
Various connectors available on request.
RF Input
Impedance 50
.
Pin
Pin Name
Description
1
THERM, LASER, CASE
Combined thermistor/laser cathode/case.
2
THERM
Thermistor.
3
LASER+
Laser anode.
4
BACK DET
Monitor anode ().
5
BACK DET+
Monitor cathode (+).
6
V
EA
Modular offset.
7
NC
No connect/reserved.
8
NC
No connect/reserved.
9
V
OA
Optical amplitude adjust.
10
V
DCA
Duty cycle adjust.
11
V
SS
Voltage supply to the IC.
12
TEC+
Thermoelectric cooler (+).
13
TEC
Thermoelectric cooler ().
For additional information and latest specifications, see our website: www.triquint.com
3
Data Sheet
E2591 10 Gb/s EML Modules
February 2003
for up to 80 km Transmission
Target Specifications
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso-
lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess
of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended
periods can adversely affect device reliability.
Table 3. Absolute Maximum Ratings
For the E2591 EML to function properly, it is very important to keep the voltage supply to the IC (V
SS
) accurate to
within 1% of the recommended voltage. This voltage is included on the device's testing data sheet. It is recom-
mended that a voltage regulator be used to maintain this supply voltage at a constant level over time. This voltage
should be measured on the V
SS
pin (pin 11) of the EML.
Parameter
Conditions
Min
Max
Unit
Laser Diode Reverse Voltage
dc
--
2
V
Laser Diode Forward Current
dc
--
150
mA
Optical Output Power
CW
--
10
mW
Modulator Reverse Voltage
--
--
3.5
V
Modulator Forward Voltage
--
--
1
V
Monitor Diode Reverse Voltage
--
--
10
V
Monitor Diode Forward Voltage
--
--
1
V
Storage Temperature Range
--
40
85
C
Operating Temperature Range
--
10
70
C
V
DCA
Voltage (pin 10)
--
V
SS
0.5
V
SS
+ 2.5
V
V
OA
Voltage (pin 9)
--
V
SS
0.5
V
SS
+ 1.5
V
V
EA
Bias Voltage (pin 6)
--
V
SS
0.5
V
SS
+ 2.5
V
Supply Voltage V
SS
(pin 11)
--
5.5
0
V
4
For additional information and latest specifications, see our website: www.triquint.com
E2591 10 Gb/s EML Modules
Data Sheet
for up to 80 km Transmission
February 2003
Target Specifications
(continued)
Characteristics
Minimum and maximum values specified over operating case temperature range. Typical values are measured at
room temperature unless otherwise noted.
Table 4. Optical and Electrical Specifications (Chip operating temp. = 15
C to 35 C, except where noted.)
1. Modulated operational values are defined to be I = I
OP
, T = T
OP
, at all specified operating conditions, 9.95328 Gb/s modulation, 2
31
1 PRBS
(operating parameters for 80 km will be provided). Laser diode temperature can be set in a 15
C to 35 C range to take advantage of wave-
length tuning, provided that it will meet all other specifications at this preset temperature. V
M
= modulator voltage.
2. Over 1600 ps/nm, V
EA
, V
DCA
, and V
OA.
3. T
CASE
= 70
C, T
LASERCHIP
= T
OP
.
4. With fourth-order Bessel-Thomson filter.
5. Without filter.
Parameter
Symbol
Conditions
Min
Max
Unit
Threshold Current (BOL)
I
TH
--
5
35
mA
Forward Voltage
V
F
I
F
= I
OP
@ T
OP
--
2.2
V
Operating Current
I
OP
--
50
100
mA
Threshold Power
P
TH
I
F
= I
TH
, V
M
= 0 V
--
80
W
Fiber Output Power (average):
Beginning of Life
P
AVG-BOL
Note 1
+0.3
--
dBm
End of Life
P
AVG-EOL
Note 1
0
--
dBm
Peak Wavelength
(Wavelength can be specified to the
ITU wavelength channels.)
PK
Note 1
1528.7
1563.9
nm
Side-mode Suppression Ratio
SMSR
V
M
= 0 V, I
F
= I
OP
, T
OP
35
--
dB
Dispersion Penalty
BER = 10
10
, D = 1600 ps/nm
DP
Notes 1, 2
--
2.0
dB
Modulator/Driver
RF Extinction Ratio
ER
RF
Notes 1, 4
10
--
dB
RF Return Loss (100 MHz to 10 GHz)
S
11
--
10
--
dB
Rise/Fall Time (20%--80%)
t
R
/t
F
Note 5
--
40
ps
Monitor Diode
Monitor Current
I
BD
V
BD
= 5 V, I
F
= I
OP
40
1100
A
Dark Current
I
D
V
BD
= 5 V
--
0.1
A
Capacitance
C
V
BD
= 5 V, F = 1 MHz
--
25
pF
Thermistor
Resistance
R
THERM
T = 25
C
9.8
10.2
k
Thermistor Current
I
TC
--
10
100
A
Thermistor B Constant
B
--
3700
4100
--
Thermoelectric Cooler (TEC)
TEC Current
I
TEC
Note 3
--
1.1
A
TEC Voltage
V
TEC
--
2.6
V
TEC Power
P
TEC
--
2.9
W
TEC Capacity
T
55
--
C
Optical Isolation
Optical Isolation
--
Note 3
30
--
dB
Package
Wavelength vs. Case Temperature
d
/dT
T
CASE
= 10
C to +70 C
0.5
0.5
pm/
C
For additional information and latest specifications, see our website: www.triquint.com
5
Data Sheet
E2591 10 Gb/s EML Modules
February 2003
for up to 80 km Transmission
Outline Diagram
0.291
(7.38)
0.215
(5.47)
0.078
(1.98)
0.050
(1.27)
0.020
(0.51)
0.350
(8.89)
0.500
(12.7)
0.551
(13.99)
0.500
(12.7)
LEAD 13
LEAD 1
TRADEMARK CODE, LASER SERIAL NUMBER
AND DATE CODE LABEL IN AREA SHOWN
BEND LIMITER
0.498
(12.64)
1.025
(26.04)
0.106
(2.7)
0.190
(4.82)
12 PLACES
CONNECTOR TYPE
AS SPECIFIED
1.180
(29.97)
2.024
(51.41)
0.820
(20.83)
33.0
0.56
(1.42)
0.365
(9.27)
0.180
(4.56)
0.030
(0.75)
0.228
(5.78)
0.98
(2.5)
0.260
(6.6)
0.200
(5.08)
0.010
0.002
(0.25
0.064)
3 PLACES
0.215
(5.45)
(838.20)
MIN
4 PLACES
0.355
(9.00)
0.154
(3.91)
MIN.
0.075
(1.9)
PDF 
ZIP