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Электронный компонент: TGA1045-EPU

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TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
1
Ku Band Power Amplifier TGA1045-EPU
Key Features and Performance
HFET Technology
12.5 -15.5 GHz Frequency Range
> 3W Nominal Pout
24 dB Nominal Gain
9V @ 1.2A Bias
Chip Dimensions 4.69 mm x 3.35 mm
Primary Applications
Ku band Satellite Ground Terminal
VSAT
Point-to-Point Radio
Release Status
Engineering Prototype Unit (EPU)
samples available August 1998
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all
electrical and process specifications. Specifications are subject to change without notice.
EG 1045 Fixtured Data
1 dB Compression Point
10
15
20
25
30
35
40
10
11
12
13
14
15
16
17
18
19
Frequency (GHz)
P
out (dB
m
)
Average
Preliminary Pout Data
Parame te r
Me as ure d (In Fixture )
Units
FREQUENCY RANGE
13.0 - 15.5
GHz
LINEAR GAIN AT 25
C
24.0
dB
GAIN FLATNESS
< 2.0
dB pp
P1dB AT 25
C
~34.5
dBm
INP UT RETURN LOSS
> 10
dB
OUTP UT RETURN LOSS
> 8
dB
DC VOLTAGE
+9
Volts
CURRENT
1.2 S ma ll Signa l
A
DC P OWER
10.8
W
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all
electrical and process specifications. Specifications are subject to change without notice.
Recommended Assembly Diagram
Vd 12
Vg 34
Vd 34
Vg 12