TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
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Ka Band 2 Watt Power Amplifier TGA1055-EPU
Key Features and Performance
0.25 um pHEMT Technology
20 dB Nominal Gain
2W Nominal Pout
-30 dBc IMR3 @ 26 dBm SCL
Bias 7V @ 1.4 A
Chip Dimensions 5.89 mm x 3.66 mm
Chip Dimensions 5.89 mm x 3.66 mm
Primary Applications
LMDS
Point-to-Point Radio
Satellite Ground Terminal
Release Status
Currently shipping Engineering
Prototype Units
EG1055B
Bias Testing: Vd=7V, Id=1.38A, T=25C, Freq=29GHz
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35
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Input Power (dBm)
Output Power (dBm) & Gain (dB)
0
2
4
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20
Power Added Efficiency (%)
Pout
Gain
PAE
Preliminary Pout, Gain and PAE Data at 29GHz
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
3
Chip Assembly and Bonding Diagram
Reflow process assembly notes:
AuSn (80/20) solder with limited exposure to temperatures at or above 300
C
alloy station or conveyor furnace with reducing atmosphere
no fluxes should be utilized
coefficient of thermal expansion matching is critical for long-term reliability
storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
vacuum pencils and/or vacuum collets preferred method of pick up
avoidance of air bridges during placement
force impact critical during auto placement
organic attachment can be used in low-power applications
curing should be done in a convection oven; proper exhaust is a safety concern
microwave or radiant curing should not be used because of differential heating
coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
thermosonic ball bonding is the preferred interconnect technique
force, time, and ultrasonics are critical parameters
aluminum wire should not be used
discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
maximum stage temperature: 200
C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
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