TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
1
1
36 - 40 GHz Power Amplifier TGA1071-EPU
Key Features and Performance
0.25um pHEMT Technology
36-40 GHz Frequency Range
22 dBm Nominal Pout @ P1dB
15 dB Nominal Gain
5V, 120 mA Bias
Chip Dimensions 3.4mm x 2.1mm
Primary Applications
Point-to-Point Radio
Point-Multipoint Radio
Small Signal Gain
Pout at 1dB Gain Compression
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TGA1071 Typical RF Performance (Fixtured)
-25
-20
-15
-10
-5
0
5
10
15
20
32.0
33.0
34.0
35.0
36.0
37.0
38.0
39.0
40.0
41.0
42.0
Frequency (GHz)
Gain and Return Loss (dB)
s11
s22
The TriQuint TGA1071-EPU is a two stage
PA MMIC design using TriQuint's proven
0.25 um Power pHEMT process to support a variety
of millimeter wave applications including
point-to-point digital radio and point-to-multipoint
systems.
The two-stage design consists of two 300 um input
devices driving a pair of 400 um output devices.
The TGA1071 provides 22dBm of output power
across 36-40 GHz with a typical small signal gain
of 15dB.
The TGA1071 requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance compliance.
The device is available in chip form.
TGA1071 RF Probe Summary Data
0.00
5.00
10.00
15.00
20.00
25.00
36
37
38
39
40
Frequency (GHz)
Pout (dBm)
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
2
RECOMMENDED MAXIMUM RATINGS
Symbol
Parameter
Value
Notes
V
+
Positive Supply Voltage
7 V
I
+
Positive Supply Current
.4 A
3/
P
D
Power Dissipation
2.8 W
P
IN
Input Continuous Wave Power
20 dBm
T
CH
Operating Channel Temperature
150
C
1/, 2/
T
M
Mounting Temperature (30 seconds)
320
C
T
STG
Storage Temperature
-65
C to 150
C
1/
These ratings apply to each individual FET
2/
Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/
Total current for both stages
DC PROBE TESTS
(T
A
= 25
C
5
C)
Symbol
Parameter
Minimum
Maximum Value
Idss
Saturated Drain Current (info
only)
140
658
mA
V
P1-5
Pinch-off Voltage
-1.5
-0.5
V
BV
GS1
Breakdown Voltage gate-source
-30
-8
V
BV
GD1-5
Breakdown Voltage gate-drain
-30
-8
V
Electrical Characteristics
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
ON-WAFER RF PROBE CHARACTERISTICS
(T
A
= 25
C
5
C)
Symbol Parameter
Test Condition
Vd=5V, Id=120mA
Limit
Min Nom Max
Units
G
p
Small-signal
Power Gain
F = 36 to 40 GHz
F = 38 GHz
13
15
dB
dB
dB
IRL
Input Return
Loss
F = 36 to 40 GHz
-
-10
-
dB
ORL
Output Return
Loss
F = 36 to 40 GHz
-
-10
-
dB
PWR
Output Power
F = 36 to 40 GHz
22
-
dBm
Note: RF probe data is taken at 0.4 GHz steps
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
3
Statistical Performance Summary
Typical s-parameters
TGA1071 RF Probe Summary Data
0
2
4
6
8
10
12
14
36.0 36.4 36.8 37.2 37.6 38.0 38.4 38.8 39.2 39.6 40.0
Frequency (GHz)
Gain (dB)
Small Signal Gain
TGA1071 RF Probe Summary Data
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
36
36.4 36.8 37.2 37.6
38
38.4 38.8 39.2 39.6
40
Frequency (GHz)
s11 (dB)
Input Return Loss
TGA1071 RF Probe Summary Data
-16
-14
-12
-10
-8
-6
-4
-2
0
36
36.4 36.8 37.2 37.6
38
38.4 38.8 39.2 39.6
40
Frequency (GHz)
s22 (dB)
Output Return Loss
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Freq
S11
S11
S21
S21
S12
S12
S22
S22
(GHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
36.0
0.593
88.8
5.060
-116.0
0.024
179.8
0.215
125.6
36.4
0.569
83.3
5.037
-136.2
0.030
163.2
0.210
122.5
36.8
0.508
75.6
5.174
-156.1
0.031
148.6
0.182
136.4
37.2
0.448
66.9
5.327
-172.3
0.035
133.6
0.159
151.4
37.6
0.328
59.0
5.142
170.3
0.036
119.4
0.228
170.4
38.0
0.191
48.8
5.109
151.1
0.036
106.1
0.293
180.0
38.4
0.086
-18.0
5.480
132.6
0.040
90.8
0.353
-175.6
38.8
0.202
-147.6
5.274
108.3
0.036
69.8
0.494
174.7
39.2
0.324
-159.9
4.896
88.1
0.032
55.1
0.554
166.0
39.6
0.460
-170.3
4.527
67.1
0.029
44.9
0.566
161.5
40.0
0.567
179.8
3.929
47.1
0.023
27.3
0.576
157.2
TGA1071 RF Probe Summary Data
0.00
5.00
10.00
15.00
20.00
25.00
36
37
38
39
40
Frequency (GHz)
Pout (dBm)
Wafer 9818801-2
678 devices
Output Power
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
4
Mechanical Characteristics
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
5
Chip Assembly and Bonding Diagram
Reflow process assembly notes:
AuSn (80/20) solder with limited exposure to temperatures at or above 300C
alloy station or conveyor furnace with reducing atmosphere
no fluxes should be utilized
coefficient of thermal expansion matching is critical for long-term reliability
storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
vacuum pencils and/or vacuum collets preferred method of pick up
avoidance of air bridges during placement
force impact critical during auto placement
organic attachment can be used in low-power applications
curing should be done in a convection oven; proper exhaust is a safety concern
microwave or radiant curing should not be used because of differential heating
coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
thermosonic ball bonding is the preferred interconnect technique
force, time, and ultrasonics are critical parameters
aluminum wire should not be used
discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
maximum stage temperature: 200C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
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