TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
1
27- 32 GHz 0.7 Watt Power Amplifier TGA1073B-SCC
Key Features and Performance
0.25 um pHEMT Technology
25 dB Nominal Gain @ 28 GHz
28.5 dBm Nominal Pout @ P1dB (7V)
-38 dBc IMR3 @ 18 dBm SCL
Bias 6 - 8 V @ 420 mA
Chip Dimensions 3.12mm x 2.15mm
Primary Applications
Point-to-Point Radio
Point-to-Multipoint Communications
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
S21
S11
S22
26.0
26.5
27.0
27.5
28.0
28.5
29.0
29.5
30.0
28.0
29.0
30.0
31.0
32.0
Frequency (GHz)
VD = +6V, +7V, +8V
IDQ = 420mA
The TriQuint TGA1073B-SCC is a three stage
HPA MMIC design using TriQuint's proven
0.25 um Power pHEMT process. The TGA1073B
is designed to support a variety of millimeter wave
applications including point-to-point digital radio
and LMDS/LMCS and Ka band satellite ground
terminals.
The three stage design consists of a 2 x 300um
input stage driving a 2 x 600um interstage
followed by a 4 x 600um output stage.
The TGA1073B provides 28.5 dBm nominal
output power at 1dB compression across
27-32GHz. Typical small signal gain is 25 dB
at 28GHz and 18dB at 32GHz.
The TGA1073B requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance
compliance. The device is available in chip form.
February 13, 2001
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
2
TGA1073B-SCC
MAXIMUM RATINGS
SYMBOL
PARAMETER 4/
VALUE
NOTES
V
+
POSITIVE SUPPLY VOLTAGE
11V
I
+
POSITIVE SUPPLY CURRENT
630 mA
1/
I
-
NEGATIVE GATE CURRENT
35.2 mA
P
IN
INPUT CONTINUOUS WAVE POWER
23 dBm
P
D
POWER DISSIPATION
6.93 W
T
CH
OPERATING CHANNEL TEMPERATURE
150
0
C
2/ 3/
T
M
MOUNTING TEMPERATURE
(30 SECONDS)
320
0
C
T
STG
STORAGE TEMPERATURE
-65 to 150
0
C
1/
Total current for all stages.
2/
These ratings apply to each individual FET.
3/
Junction operating temperature will directly affect the device median time to failure (T
M
). For maximum life, it is
recommended that junction temperatures be maintained at the lowest possible levels.
4/
These ratings represent the maximum operable values for the device.
DC SPECIFICATIONS (100%)
(T
A
= 25
C + 5 C)
NOTES
SYMBOL
TEST CONDITIONS 2/
LIMITS
UNITS
MIN
MAX
I
DSS1,2
STD
60
282
mA
G
M1,2
STD
132
318
mS
1/
|V
P1,2
|
STD
0.5
1.5
V
1/
|V
P3
|
STD
0.5
1.5
V
1/
|V
P4
|
STD
0.5
1.5
V
1/
|V
P5,6
|
STD
0.5
1.5
V
1/
|V
P7,8
|
STD
0.5
1.5
V
1/
|V
BVGD1-8
|
STD
11
30
V
1/
|V
BVGS1,2
|
STD
11
30
V
1/
V
P
, V
BVGD
, and V
BVGS
are negative.
2/
The measurement conditions are subject to change at the manufacture's discretion (with appropriate notification to the
buyer).
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
3
TGA1073B-SCC
RF SPECIFICATIONS
(T
A
= 25
C + 5C)
NOTE
TEST
MEASUREMENT
CONDITIONS
VALUE
UNITS
6V @ 420mA
MIN
TYP
MAX
27 30 GHz
20
25
dB
1/
SMALL-SIGNAL
GAIN MAGNITUDE
31 32 GHz
16
20
dB
POWER OUTPUT
AT 1 dB GAIN
COMPRESSION
27 32 GHz
26.5
28.5
dBm
1/
INPUT RETURN LOSS
MAGNITUDE
27 32 GHz
-10
dB
1/
OUTPUT RETURN LOSS
MAGNITUDE
27 32 GHz
-10
dB
2/
OUTPUT THIRD ORDER
INTERCEPT
37
dBm
1/
RF probe data is taken at 1 GHz steps.
2/ Minimum output third-order-intercept (OTOI) is generally 6dB minimum above the 1dB
compression point (P1dB). Calculations are based on standard two-tone testing with each tone
approximately 10dB below the nominal P1dB. Factors that may affect OTOI performance
include device bias, measurement frequency, operating temperature, output interface and output
power level for each tone.
RELIABILITY DATA
PARAMETER
BIAS CONDITIONS
P
DISS
R
JC
T
CH
T
M
V
D
(V)
I
D
(mA)
(W)
(C/W)
(
C)
(HRS)
R
JC
Thermal resistance
(channel to backside of
c/p)
6
420
2.52
22.58
126.9
8.0 E6
Note: Assumes eutectic attach using 1.5 mil thick 80/20 AuSn mounted to a 20mil CuMo Carrier at 70
C
baseplate temperature. Worst case condition with no RF applied, 100% of DC power is
dissipated.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
4
TGA1073B Average Performance
Sam ple Size = 11499 devices
2
6
10
14
18
22
26
30
34
26
27
28
29
30
31
32
33
34
Frequency (GHz)
G
a
in
(
d
B)
-40
-36
-32
-28
-24
-20
-16
-12
-8
-4
0
26
27
28
29
30
31
32
33
34
Frequency (GHz)
I
nput Re
tur
n
Los
s
(dB)
-4 0
-3 6
-3 2
-2 8
-2 4
-2 0
-1 6
-1 2
-8
-4
0
F r e q u e n c y (G H z )
Output R
e
tur
n
Los
s
(dB
)
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
5
Mechanical Characteristics
TGA1073B-SCC
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
6
Chip Assembly and Bonding Diagram
Recommended:
Solder MMIC to carrier using AuSn 80/20
Bond MMIC RF in and RF out with 5mil Au ribbon
Ribbon should be as short as possible
Bond DC Lines as shown with 1 mil bondwires
0.01uF
0.01uF
100pF
100pF
TGA1073B-SCC
Vg
Vd
RF in
RF out
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Product Datasheet
7
Reflow process assembly notes:
= AuSn (80/20) solder with limited exposure to temperatures at or above 300C
= alloy station or conveyor furnace with reducing atmosphere
= no fluxes should be utilized
= coefficient of thermal expansion matching is critical for long-term reliability
= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
= vacuum pencils and/or vacuum collets preferred method of pick up
= avoidance of air bridges during placement
= force impact critical during auto placement
= organic attachment can be used in low-power applications
= curing should be done in a convection oven; proper exhaust is a safety concern
= microwave or radiant curing should not be used because of differential heating
= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
= thermosonic ball bonding is the preferred interconnect technique
= force, time, and ultrasonics are critical parameters
= aluminum wire should not be used
= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
= maximum stage temperature: 200C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA1073B-SCC
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